| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
 |
IRF630U2
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF630UA
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF630WC
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF630_06
中文翻译 品牌: STMICROELECTRONICS |
N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET N沟道200V - 0.35ヘ - 9A TO- 220 / TO- 220FP网overlay⑩ II功率MOSFET |