| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
 |
IRF731
中文翻译 品牌: FAIRCHILD |
N-Channel Power MOSFETs, 5.5A, 350 V/400V N沟道功率MOSFET ， 5.5A ， 350 V / 400V |
||||
 |
 |
IRF731
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
 |
IRF731
中文翻译 品牌: NJSEMI |
Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC | ||||
 |
IRF731-001
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | ||||
|
IRF731-001PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
|
IRF731-002PBF
中文翻译 品牌: INFINEON |
5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET | 局域网 脉冲 晶体管 | |||
|
IRF731-003
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | ||||
|
IRF731-004
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 局域网 脉冲 晶体管 | |||
|
IRF731-004PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 局域网 脉冲 晶体管 | |||
|
IRF731-005
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | ||||
|
IRF731-005PBF
中文翻译 品牌: INFINEON |
5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET | ||||
|
IRF731-006
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 局域网 脉冲 晶体管 | |||
|
IRF731-006PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 局域网 脉冲 晶体管 | |||
|
IRF731-009
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 局域网 脉冲 晶体管 | |||
|
IRF731-010PBF
中文翻译 品牌: INFINEON |
5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET | ||||
|
IRF731-012
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
|
IRF731-012PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 局域网 脉冲 晶体管 | |||
|
IRF731-013
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | ||||
|
IRF731-013PBF
中文翻译 品牌: INFINEON |
5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET | ||||
|
 |
IRF7311
中文翻译 品牌: INFINEON |
HEXFET Power MOSFET HEXFET功率MOSFET |
|||
|
 |
IRF7311PBF
中文翻译 品牌: INFINEON |
HEXFET㈢Power MOSFET HEXFET㈢Power MOSFET |
|||
|
 |
IRF7311TR
中文翻译 品牌: INFINEON |
Generation V Technology 第五代技术 |
|||
 |
IRF7311TR
中文翻译 品牌: VBSEMI |
元器件封装:8-SOIC; | ||||
 |
IRF7311TR
中文翻译 品牌: UMW |
种类:N+N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时）:6.6A;Vgs(th)(V):±12;漏源导通电阻:29mΩ@4.5V | ||||
|
 |
IRF7311TRPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | 局域网 开关 脉冲 光电二极管 晶体管 | ||
|
 |
IRF7313
中文翻译 品牌: INFINEON |
HEXFET POWER MOSFET HEXFET功率MOSFET |
晶体 晶体管 开关 脉冲 光电二极管 局域网 | ||
|
 |
IRF7313PBF
中文翻译 品牌: INFINEON |
HEXFET Power MOSFET HEXFET功率MOSFET |
|||
|
 |
IRF7313PBF-1
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 晶体管 | ||
|
IRF7313QPBF
中文翻译 品牌: INFINEON |
HEXFET Power MOSFET HEXFET功率MOSFET |
||||
|
IRF7313QTR
中文翻译 品牌: INFINEON |
最小工作温度(℃):0;最大工作温度(℃):; |