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AP60T03GP [A-POWER]

Simple Drive Requirement, Low Gate Charge; 简单的驱动要求，低栅极电荷
AP60T03GP
型号： AP60T03GP
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, Low Gate Charge
简单的驱动要求，低栅极电荷

晶体 栅极 晶体管 功率场效应晶体管 开关 脉冲 驱动 局域网
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AP60T03GS/P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
12mΩ  
45A  
▼ Low Gate Charge  
▼ Fast Switching Speed  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
TO-263(S)  
TO-220(P)  
The TO-263 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP60T03GP)  
are available for low-profile applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
45  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
32  
A
120  
A
PD@TC=25℃  
Total Power Dissipation  
44  
W
Linear Derating Factor  
0.352  
-55 to 175  
-55 to 175  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
3.4  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
200809253  
AP60T03GS/P  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.03  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=10V, ID=20A  
-
12  
V
GS=4.5V, ID=15A  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance2  
VDS=VGS, ID=250uA  
VDS=10V, ID=10A  
VDS=30V, VGS=0V  
3
25  
-
-
S
IDSS  
Drain-Source Leakage Current  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
1
Drain-Source Leakage Current (Tj=175oC) VDS=24V ,VGS=0V  
-
250  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS= +20V  
ID=20A  
-
+100  
11.6  
3.9  
7
19  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
VGS=4.5V  
VDS=15V  
-
8.8  
57.5  
18.5  
6.4  
-
ID=20A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.75Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
1135 1816  
VDS=25V  
200  
135  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=45A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
ns  
nC  
23.3  
16  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP60T03GS/P  
125  
100  
75  
50  
25  
0
90  
60  
30  
0
10V  
8.0V  
T C =175 o C  
10V  
8.0V  
T C =25 o C  
6.0V  
5.0V  
6.0V  
5.0V  
V G =4.0V  
V G =4.0V  
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2
1.6  
1.2  
0.8  
0.4  
80  
60  
40  
20  
0
I D =20A  
V G =10V  
I D =15A  
T
C =25 ℃  
Ω
2
4
6
8
10  
-50  
25  
100  
175  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
3
2
1
0
100  
10  
1
T j =175 o C  
T j =25 o C  
0.1  
-50  
25  
100  
175  
0
0.5  
1
1.5  
T j , Junction Temperature ( o C )  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP60T03GS/P  
f=1.0MHz  
10000  
1000  
100  
12  
I D =20A  
9
V DS =16V  
DS =20V  
V
V
DS =24V  
C iss  
6
3
0
C oss  
C rss  
1
8
15  
22  
29  
0
6
12  
18  
24  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
1
Duty factor = 0.5  
0.2  
0.1  
100  
10  
1
0.1  
100us  
0.05  
PDM  
0.02  
t
1ms  
T
0.01  
10ms  
Single Pulse  
Duty Factor = t/T  
Peak Tj = PDM x Rthjc + TC  
T C =25 o C  
100ms  
Single Pulse  
DC  
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-263  
E
E3  
SYMBOLS  
Millimeters  
E1  
E2  
MIN  
4.25  
0.00  
2.20  
0.70  
1.07  
0.30  
1.15  
8.30  
NOM  
4.75  
0.15  
2.45  
0.90  
1.27  
0.45  
1.30  
8.90  
MAX  
A
A1  
A2  
b
5.20  
0.30  
2.70  
1.10  
1.47  
0.60  
1.45  
9.40  
D1  
D
b1  
c
c1  
D
b1  
b
D1  
E
---- 5.10(ref) ----  
9.70 10.10 10.50  
L2  
L3  
E1  
E2  
E3  
e
---- 7.40(ref) ----  
---- 6.40(ref) ----  
---- 8.00(ref) ----  
2.04  
2.54  
3.04  
e
L4  
A2  
L1  
L2  
L3  
L4  
θ
---- 2.54(ref) ----  
-----  
4.50  
-----  
0°  
1.50  
4.90  
1.50  
-----  
-----  
5.30  
----  
5°  
A
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
c
θ
c1  
A1  
L1  
Part Marking Information & Packing : TO-263  
Part Number  
Package Code  
60T03GS  
meet Rohs requirement  
for low voltage MOSFET only  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-220  
E
A
E1  
Millimeters  
SYMBOLS  
φ
MIN  
NOM  
4.60  
0.88  
8.80  
0.43  
MAX  
A
b
4.40  
0.76  
8.60  
0.36  
4.80  
1.00  
9.00  
0.50  
L5  
L1  
c1  
D
c
E
9.80 10.10 10.40  
14.70 15.00 15.30  
D1  
L4  
L5  
D1  
c1  
b1  
L
6.20  
6.40  
5.10 REF.  
1.35  
6.60  
D
L4  
1.25  
1.17  
1.45  
1.47  
1.32  
13.25 13.75 14.25  
2.54 REF.  
b1  
e
L1  
φ
E1  
2.60  
3.71  
2.75  
3.84  
2.89  
3.96  
L
7.4 REF,  
c
b
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
e
Part Marking Information & Packing : TO-220  
Part Number  
meet Rohs requirement  
Package Code  
60T03GP  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
6

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