AP6683GYT-HF [A-POWER]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
| 型号： | AP6683GYT-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP6683GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-30V
D
S
▼ Small Size & Lower Profile
10mΩ
-14.5A
▼ RoHS Compliant & Halogen-Free
G
D
D
Description
D
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK® 3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
+20
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
-14.5
A
-11.6
A
-50
A
PD@TA=25℃
TSTG
Total Power Dissipation
3.13
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
5
Rthj-a
40
Data and specifications subject to change without notice
1
201301291
AP6683GYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A
VGS=0V, ID=-250uA
-30
-
-
V
-
-
8
10
mΩ
VGS=-4.5V, ID=-6A
11.4 14.5 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-10A
VDS=-24V, VGS=0V
VGS=+20V, VDS=0V
ID=-10A
-1
-
-1.6
25
-
-3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
-
S
IDSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-10
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
-
-
+100
Qg
-
37
11
14
13
10
240
160
60
-
Qgs
Qgd
td(on)
tr
VDS=-15V
-
VGS=-4.5V
-
-
VDS=-15V
-
-
ID=-1A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
-
VGS=-10V
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
-
2700 4320
VDS=-15V
-
430
400
60
-
-
-
f=1.0MHz
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-2.9A, VGS=0V
IS=-10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
Reverse Recovery Time
Reverse Recovery Charge
80
50
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec ; 210oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6683GYT-HF
80
60
40
20
0
80
60
40
20
0
A =25 o C
T A = 150 o
C
-10V
-7.0V
-6.0V
-10V
-7.0V
-6.0V
T
-5.0V
-5.0V
V G = -4.0V
V
G = -4.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
I D = -10A
I D = -6 A
V
G = -10V
T
A = 25 ℃
Ω
6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
1.6
1.2
0.8
0.4
0.0
I D = -250uA
8
6
T j =150 o C
T j =25 o C
4
2
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6683GYT-HF
f=1.0MHz
3500
3000
2500
2000
1500
1000
500
8
I D = -10 A
V
DS = -15 V
6
4
2
0
C iss
C oss
C rss
0
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
Operation in this area
100us
limited by R
DS(ON)
0.2
10
1ms
0.1
0.1
0.05
0.02
10ms
1
100ms
PDM
0.01
0.01
t
T
0.1
1s
Duty factor = t/T
T A =25 o C
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthia=210 ℃/W
DC
Single Pulse
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
60
40
20
0
16
V DS = -5V
12
8
T j =150 o C
T j =25 o C
4
T j = -40 o
C
0
25
50
75
100
125
150
0
1
2
3
4
5
6
T A , Ambient Temperature ( o C )
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
相关型号：
AP6901GH-HF
TRANSISTOR 72 A, 30 V, 0.0062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5, FET General Purpose Power
A-POWER
AP6902GH-HF
TRANSISTOR 42 A, 30 V, 0.001 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5, FET General Purpose Power
A-POWER
©2020 ICPDF网 联系我们和版权申明