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AP75N07GI-HF [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP75N07GI-HF
型号： AP75N07GI-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：101K)
中文：  中文翻译
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AP75N07GI-HF  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Lower On-resistance  
BVDSS  
RDS(ON)  
ID  
75V  
11mΩ  
43A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
G
▼ Halogen Free & RoHS Compliant Product  
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for commercial-  
industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
75  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
43  
A
27  
A
160  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
44.6  
W
W
℃
℃
Total Power Dissipation  
1.92  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
2.8  
65  
Rthj-a  
Data & specifications subject to change without notice  
1
201109091  
AP75N07GI-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
-
Units  
V
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=30A  
VGS=0V, ID=250uA  
75  
-
-
-
-
11  
mΩ  
mΩ  
V
GS=4.5V, ID=20A  
-
12.5  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
VDS=60V, VGS=0V  
VGS=+20V, VDS=0V  
ID=30A  
1
-
80  
3
V
gfs  
-
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
-
25  
-
-
+100  
Qg  
-
80  
128  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
VDS=60V  
-
10  
-
VGS=4.5V  
-
50  
-
VDD=40V  
-
14  
-
ID=30A  
-
54  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
-
150  
150  
4300  
640  
200  
1.8  
-
VGS=10V  
-
-
6880  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
-
-
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
f=1.0MHz  
-
-
f=1.0MHz  
0.9  
3.6  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
Min.  
Typ.  
-
Max.  
Units  
V
VSD  
trr  
IS=30A, VGS=0V  
IS=10A, VGS=0V  
dI/dt=100A/µs  
-
-
-
1.3  
ns  
Reverse Recovery Time  
Reverse Recovery Charge  
75  
-
-
nC  
Qrr  
200  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP75N07GI-HF  
160  
120  
80  
200  
160  
120  
80  
T C = 25 o  
C
T C = 150 o  
C
10V  
7.0V  
6.0V  
10V  
7.0V  
6.0V  
5.0V  
5.0V  
V G = 4.0V  
V G = 4.0V  
40  
40  
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
10  
10  
9
I D =30A  
I D =20A  
T
C =25 o C  
V
G =10V  
Ω
9
8
8
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
30  
20  
10  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
I D =250uA  
T j =150 o C  
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP75N07GI-HF  
f=1.0MHz  
8
8000  
6000  
4000  
2000  
0
I
D = 30 A  
6
4
2
0
V DS = 4 0 V  
DS = 45 V  
DS = 60 V  
V
C iss  
V
C oss  
C rss  
0
40  
80  
120  
160  
1
5
9
13  
17  
21  
25  
29  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
1
DUTY=0.5  
0.2  
100  
10  
1
Operation in this area  
100us  
limited by R  
DS(ON)  
0.1  
0.1  
0.05  
1ms  
0.02  
10ms  
0.01  
PDM  
0.01  
100ms  
1s  
t
T
SINGLE PULSE  
DC  
Duty factor = t/T  
T C =25 o  
C
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
120  
100  
80  
60  
40  
20  
0
60  
50  
40  
30  
20  
10  
0
V DS =5V  
T j = -40 o  
C
T j =25 o C  
T j =150 o C  
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
T C , Case Temperature ( o C )  
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Maximum Continuous Drain  
Current v.s. Case Temperature  
4

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