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AP85T08GP [A-POWER]

TRANSISTOR 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power;
AP85T08GP
型号： AP85T08GP
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power

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AP85T08GS/P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
80V  
13mΩ  
75A  
▼ Lower On-resistance  
▼ Fast Switching Characteristic  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
TO-220(P)  
The TO-263 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications such  
as DC/DC converters. The through-hole version (AP85T08GP) are  
available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
80  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
75  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
48  
A
260  
138  
1.11  
450  
30  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
Single Pulse Avalanche Energy3  
W/℃  
mJ  
A
EAS  
IAR  
Avalanche Current  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
℃
℃
Thermal Data  
Symbol  
Parameter  
Value  
0.9  
Units  
℃/W  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
40  
Rthj-a  
62  
Data and specifications subject to change without notice  
1
201204033  
AP85T08GS/P  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min.  
80  
-
Typ.  
Max.  
Units  
V
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=45A  
VGS=0V, ID=250uA  
-
-
-
-
13  
3
mΩ  
V
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
1
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=125oC)  
Gate-Source Leakage  
Total Gate Charge  
VDS=10V, ID=45A  
VDS=80V, VGS=0V  
VDS=64V ,VGS=0V  
VGS=+20V, VDS=0V  
ID=45A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
70  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
10  
-
100  
IGSS  
-
+100  
Qg  
63  
23  
38  
30  
100  
144  
173  
100  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
VDS=64V  
-
-
-
-
-
-
VGS=4.5V  
VDS=40V  
Rise Time  
ID=45A  
td(off)  
tf  
Turn-off Delay Time  
RG=10Ω  
Fall Time  
VGS=10V  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
6300 10080  
Output Capacitance  
VDS=25V  
670  
350  
1.1  
-
-
Reverse Transfer Capacitance  
Gate Resistance  
f=1.0MHz  
f=1.0MHz  
1.7  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
Min.  
Typ.  
-
Max.  
Units  
V
VSD  
trr  
IS=45A, VGS=0V  
IS=20A, VGS=0V  
dI/dt=100A/µs  
-
-
-
1.3  
ns  
Reverse Recovery Time  
Reverse Recovery Charge  
47  
86  
-
-
nC  
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.  
4.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP85T08GS/P  
120  
90  
60  
30  
0
250  
200  
150  
100  
50  
T C = 150 o  
C
10V  
7.0 V  
10V  
7.0 V  
5.0V  
T C = 25 o  
C
4.5V  
5.0V  
4.5V  
V
G =3.0V  
V G =3.0V  
0
0
3
6
9
12  
0
3
6
9
12  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
14  
13  
12  
11  
10  
2.0  
1.6  
1.2  
0.8  
0.4  
I D =20A  
I D =45A  
T
C =25 o C  
V
G =10V  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.0  
1.5  
1.0  
0.5  
0.0  
50  
40  
30  
20  
10  
0
T j =150 o C  
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP85T08GS/P  
f=1.0MHz  
10  
10000  
I
D = 45 A  
C iss  
8
6
4
2
0
V DS = 4 0 V  
DS = 50 V  
V
V
DS = 64 V  
1000  
C oss  
C rss  
100  
1
5
9
13  
17  
21  
25  
29  
0
20  
40  
60  
80  
100  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
1
Duty factor=0.5  
Operation in this area  
limited by R  
DS(ON)  
0.2  
100  
10  
1
0.1  
100us  
1ms  
0.1  
0.05  
PDM  
0.02  
t
0.01  
T
10ms  
100ms  
Duty factor = t/T  
Single Pulse  
T c =25 o C  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
DC  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
120  
80  
40  
0
VG  
V DS =5V  
T j =25 o C  
T j =150 o C  
QG  
4.5V  
QGD  
QGS  
Q
Charge  
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4

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