AP9408AGM [A-POWER]
TRANSISTOR 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power;型号: | AP9408AGM |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | TRANSISTOR 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power 开关 脉冲 光电二极管 晶体管 |
文件: | 总5页 (文件大小:201K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9408AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
30V
D
D
▼ Simple Drive Requirement
10mΩ
12.5A
D
D
▼ Fast Switching Characteristic
G
S
S
S
SO-8
Description
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
12.5
A
10
A
50
A
PD@TA=25℃
TSTG
Total Power Dissipation
2.5
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
50
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
200810284
AP9408AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=12.5A
VGS=0V, ID=250uA
30
-
-
-
-
V
mΩ
mΩ
V
10
VGS=4.5V, ID=10A
-
-
15
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=15V, ID=12.5A
VDS=24V, VGS=0V
1
-
-
3
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T=55oC) V =24V, V =0V
33
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
10
-
-
25
j
DS
GS
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=±20V
-
-
±100
ID=12.5A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
-
6.5
1.8
3.2
7
10.5
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
5
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=15Ω
-
17.5
6
-
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
-
600
190
90
2.3
960
-
VDS=25V
-
f=1.0MHz
f=1.0MHz
-
-
-
3.5
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=2.7A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
23
15
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9408AGM
50
40
30
20
10
0
50
40
30
20
10
0
A =25 o C
T A = 150 o
C
10V
7.0 V
6 .0 V
5.0 V
T
10V
7.0 V
6.0 V
5.0 V
V
G = 4 .0 V
V G = 4.0 V
0
1
2
3
0
0
1
1
2
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
14
I D =12.5A
I D = 12.5 A
V
G =10V
T
A =25 ℃
13
12
11
10
9
Ω
8
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
8
6
4
2
0
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9408AGM
f=1.0MHz
8
1000
800
600
400
200
0
I D = 12.5 A
6
V DS =15V
DS =18V
V
C iss
V
DS = 24 V
4
2
0
C oss
C rss
1
5
9
13
17
21
25
29
0
2
4
6
8
10
12
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
0.2
100us
10
0.1
0.1
1ms
0.05
10ms
1
0.02
0.01
PDM
100ms
1s
t
0.01
T
Single Pulse
0.1
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
T A =25 o C
Rthia=125 ℃/W
DC
Single Pulse
0.01
0.001
0.0001
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(off)
tr
td(on)
tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
SYMBOLS
MIN
1.35
0.10
0.33
0.19
4.80
5.80
3.80
NOM
MAX
A
A1
B
c
1.55
1.75
0.25
0.51
0.25
5.00
6.50
4.00
8
7
6
3
5
4
0.18
0.41
E
E1
0.22
D
E
4.90
1
6.15
2
E1
e
3.90
1.27 TYP
0.254 TYP
-
e
G
L
0.38
0.00
0.90
8.00
B
α
4.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
GM
YWWSSS
WW:Week
SSS:Sequence
5
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