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AP9469GM [A-POWER]

Simple Drive Requirement, Fast Switching Characteristic; 简单的驱动要求，快速开关特性
AP9469GM
型号： AP9469GM
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, Fast Switching Characteristic
简单的驱动要求，快速开关特性

晶体 开关 晶体管 功率场效应晶体管 脉冲 光电二极管 驱动
文件： 总4页 (文件大小：100K)
中文：  中文翻译
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AP9469GM  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
40V  
50mΩ  
5.5A  
D
D
D
▼ Fast Switching Characteristic  
▼ RoHS Compliant  
D
G
S
S
SO-8  
S
Description  
D
S
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SO-8 package is universally preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
5.5  
A
4.4  
A
20  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
℃/W  
Data and specifications subject to change without notice  
200527051-1/4  
AP9469GM  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
40  
-
-
0.03  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=5A  
VGS=4.5V, ID=3A  
V/℃  
mΩ  
RDS(ON)  
-
50  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
72  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=5A  
VDS=40V, VGS=0V  
VDS=32V, VGS=0V  
VGS=±20V  
3
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
8
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
1
j
Drain-Source Leakage Current (T=70oC)  
-
25  
j
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
±100  
Qg  
ID=5A  
6
10  
Qgs  
Qgd  
td(on)  
tr  
VDS=30V  
2
-
VGS=4.5V  
3
-
VDS=20V  
7
-
ID=1A  
5
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=20Ω  
16  
3
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
480  
70  
50  
2
770  
VDS=25V  
-
-
f=1.0MHz  
f=1.0MHz  
3
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=1.9A, VGS=0V  
IS=5A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
19  
14  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.  
2/4  
AP9469GM  
20  
15  
10  
5
20  
15  
10  
5
10V  
7.0V  
5.0V  
4.5V  
10V  
7.0V  
5.0V  
4.5V  
T A = 150 o  
C
T A = 25 o  
C
V G =3.0V  
V G =3.0V  
0
0
0
2
4
6
0
2
4
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
145  
105  
65  
1.9  
1.4  
0.9  
0.4  
I D = 5 A  
I D = 3 A  
V
G =10V  
T
A =25 ℃  
Ω
25  
3
5
7
9
11  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
5
1.6  
1.2  
0.8  
0.4  
4
3
2
1
0
T j =150 o C  
T j =25 o C  
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP9469GM  
f=1.0MHz  
C iss  
16  
1000  
100  
10  
I
D = 5 A  
12  
V DS = 20 V  
V
V
DS = 25 V  
DS = 30 V  
8
C oss  
C rss  
4
0
1
5
9
13  
17  
21  
25  
29  
0
5
10  
15  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
100us  
10  
0.1  
0.1  
1ms  
0.05  
1
10ms  
0.02  
0.01  
PDM  
100ms  
1s  
0.01  
t
Single Pulse  
T
0.1  
T A =25 o C  
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Single Pulse  
Rthja=125oC/W  
DC  
0.01  
0.001  
0.0001  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
20  
15  
10  
5
VG  
V
DS =5V  
QG  
T j =25 o C  
T j =150 o C  
4.5V  
QGS  
QGD  
Charge  
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4/4  

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