AP9575GI-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET型号: | AP9575GI-HF |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总4页 (文件大小:100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9575GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
-60V
70mΩ
-16A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
D
TO-220CFM(I)
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
D
S
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
-60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-16
A
-10
A
-60
A
PD@TC=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
4.0
65
Rthj-a
Data and specifications subject to change without notice
1
200902093
AP9575GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A
VGS=0V, ID=-250uA
-60
-
-
-
-
V
-
-
70
90
mΩ
mΩ
VGS=-4.5V, ID=-8A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-9A
VDS=-60V, VGS=0V
-1
-
-
14
-
-3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-10
Drain-Source Leakage Current (Tj=125oC) VDS=-48V, VGS=0V
-
-
-250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V,VDS=0V
ID=-9A
-
-
+100
-
14
3
27
-
Qgs
Qgd
td(on)
tr
VDS=-48V
-
VGS=-4.5V
VDS=-30V
-
8
-
-
8
-
ID=-9A
-
17
36
41
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=3.3Ω
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
-
1100 2800
VDS=-25V
-
115
90
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=-10A, VGS=0V
IS=-9A, VGS=0V,
dI/dt=-100A/µs
-
-
-
-
-1.3
V
ns
nC
38
61
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9575GI-HF
40
30
20
10
0
50
40
30
20
10
0
-10V
- 7 .0V
-10V
-7.0V.
-5.0V
T C = 25 o C
T C =150 o
C
-5.0V
-4.5V
-4.5V
V
G = -3.0V
V
G = -3.0 V
0
4
8
12
0
4
8
12
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
2.0
1.6
1.2
0.8
0.4
I D = - 10 A
I D = -8 A
V
G = -10V
T
C =25 ℃
80
70
60
50
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.3
1.1
0.9
0.7
0.5
10
8
6
T j =150 o
C
T j =25 o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9575GI-HF
f=1.0MHz
15
10000
1000
100
V DS = - 48 V
D = - 9 A
I
12
C iss
9
6
C oss
C rss
3
10
0
1
5
9
13
17
21
25
29
0
10
20
30
40
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
100us
1ms
10
0.2
0.1
0.1
0.05
10ms
100ms
1s
PDM
1
t
0.02
T
T c =25 o C
DC
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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