AP95T07GP-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP95T07GP-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP95T07GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
75V
5mΩ
80A
D
S
▼ Lower On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and cost-effectiveness.
TO-220(P)
D
S
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
75
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
+20
80
V
ID@TC=25℃
ID@TC=100℃
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
70
A
320
300
2
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
mJ
℃
EAS
TSTG
TJ
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
450
-55 to 175
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
0.5
62
Rthj-a
Data and specifications subject to change without notice
1
201003162
AP95T07GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
75
-
-
0.01
-
-
-
V
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
Static Drain-Source On-Resistance2 VGS=10V, ID=60A
-
5
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=60A
VDS=75V, VGS=0V
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
88
-
4
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=60V ,VGS=0V
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V, VDS=0V
ID=80A
-
+100
85
25
36
22
160
38
165
135
Qgs
Qgd
td(on)
tr
VDS=40V
-
-
-
-
-
-
VGS=10V
VDS=40V
ID=80A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.5Ω
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
4290 6870
VDS=25V
985
390
1.2
-
-
f=1.0MHz
f=1.0MHz
1.8
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=60A, VGS=0V
IS=40A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
ns
75
-
-
nC
Qrr
Reverse Recovery Charge
190
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 169A.
4.Starting Tj=25oC , L=1mH , IAS=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T07GP-HF
250
200
150
100
50
120
100
80
60
40
20
0
T C = 25 o
C
C = 1 75 o
C
10 V
9.0 V
8.0 V
7.0 V
10V
9.0V
8.0V
T
7.0V
V G = 6.0 V
V
G = 6.0 V
0
0
1
2
3
200
200
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
10
8
2.4
I D =30A
C =25 o C
I D =60A
V
G =10V
T
2.0
1.6
1.2
0.8
0.4
Ω
6
4
4
5
6
7
8
9
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60
50
40
30
20
10
0
1.4
1.2
T j =175 o C
T j =25 o C
1
0.8
0.6
0.4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T07GP-HF
f=1.0MHz
14
10000
1000
100
I D = 80 A
12
C iss
V DS = 40 V
10
V
DS = 48 V
V
DS = 64 V
8
6
4
2
0
C oss
C rss
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
100us
0.2
0.1
1ms
0.1
0.05
10ms
100ms
PDM
0.02
t
T
0.01
DC
T c =25 o C
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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