AP9912H [A-POWER]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | AP9912H |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总6页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9912H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
S
BVDSS
RDS(ON)
ID
20V
85mΩ
10A
▼ Low Gate Charge
▼ Fast Switching
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
G
D
TO-252(H)
S
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9912J) are available for low-profile applications.
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
20
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
± 12
V
Continuous Drain Current, VGS @ 4.5V
ID@TA=25℃
ID@TA=100℃
IDM
10
A
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
7
A
20
A
PD@TA=25℃
Total Power Dissipation
18
W
Linear Derating Factor
0.144
-55 to 150
-55 to 150
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
6.6
Unit
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
Data and specifications subject to change without notice
200110031
AP9912H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
20
-
-
0.025
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
GS=2.5V, ID=3A
-
85
V
-
0.5
-
-
-
180 mΩ
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
VDS=VGS, ID=250uA
VDS=5V, ID=5A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS= ± 12V
ID=5A
-
V
9
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-
1
-
-
25
IGSS
Qg
-
-
±100
-
4.3
0.7
2.2
3.1
17.1
13.9
2.6
135
75
35
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
VDS=16V
-
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
-
VDS=16V
-
Rise Time
ID=5A
-
td(off)
tf
Turn-off Delay Time
RG=3.3Ω,VGS=4.5V
RD=3.2Ω
-
Fall Time
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
-
VDS=20V
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
VD=VG=0V , VS=1.2V
-
-
-
-
-
-
10
20
ISM
VSD
Tj=25℃, IS=10A, VGS=0V
1.2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9912H/J
21
14
7
16
12
8
4.5V
4.0V
T C =25 o C
4.5V
4.0V
T C =150 o C
3.5V
3.0V
3.5V
3.0V
V
GS =2.5V
V
GS =2.5V
4
0
0
0.0
1.5
3.0
4.5
0.0
1.0
2.0
3.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
270
210
150
90
I D =5A
I D =5A
V
GS =4.5V
T C =25 ℃
1.4
Ω
Ω
Ω
Ω
0.8
30
0.2
1
3
5
7
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP9912H/J
12
24
16
8
9
6
3
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
10
1
Duty Factor = 0.5
100us
1ms
0.2
0.1
0.05
0.1
PDM
10ms
100ms
1s
0.02
t
T
0.01
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
T C =25 o C
Single Pulse
0.1
0.01
0.00001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS (V)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9912H/J
f=1.0MHz
12
1000
100
10
I D =5A
9
VDS =10V
VDS =13V
V
DS =16V
Ciss
Coss
Crss
6
3
0
0
2
4
6
8
1
7
13
19
25
VDS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.6
1.2
0.8
0.4
100
10
Tj=150 o C
Tj=25 o C
1
0.1
-50
0
50
100
150
0.2
0.6
1
1.4
T j , Junction Temperature ( o C )
VSD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
AP9912H/J
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.8 x RATED VDS
RG
G
10%
VGS
+
-
4.5 V
VGS
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
S
4.5V
0.8 x RATED VDS
QGD
QGS
G
VGS
+
1~ 3 mA
IG
-
I
D
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
相关型号：
©2020 ICPDF网 联系我们和版权申明