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AP9962AGD [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9962AGD
型号： AP9962AGD
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
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AP9962AGD  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-resistance  
BVDSS  
RDS(ON)  
ID  
40V  
25mΩ  
7A  
D2  
D2  
D1  
▼ Single Drive Requirement  
▼ PDIP-8 Package  
D1  
G2  
S2  
G1  
PDIP-8  
S1  
Description  
D2  
S2  
D1  
S1  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G2  
G1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Rating  
Units  
V
VDS  
VGS  
40  
+20  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25℃  
ID@TA=70℃  
IDM  
7
5.5  
A
A
20  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2
W
℃
℃
Storage Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
1
200810282  
AP9962AGD  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=7A  
VGS=0V, ID=250uA  
40  
-
-
-
-
-
V
25  
40  
mΩ  
mΩ  
VGS=4.5V, ID=5A  
-
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=7A  
VDS=32V, VGS=0V  
VDS=32V ,VGS=0V  
VGS= +20V  
ID=7A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18  
-
3
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (T=70oC)  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
10  
-
25  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
+100  
12  
2.5  
7.4  
8
20  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=32V  
VGS=4.5V  
-
VDS=20V  
-
ID=1A  
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=20Ω  
23  
5.5  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
820 1350  
VDS=25V  
95  
90  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=1.7A, VGS=0V  
Is=7A, VGS=0V,  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
1.2  
V
19  
12  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
dI/dt=100A/µs  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3. Mounted on 1 in2 copper pad of FR4 board ;90℃/W when mounted on min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9962AGD  
30  
20  
10  
0
30  
20  
10  
0
T A =25 o  
C
10V  
7.0V  
5.0V  
4.5V  
T A =150 o  
C
10V  
7.0V  
5.0V  
4.5V  
V
GS =3.0V  
V
GS =3.0V  
0
0.4  
0.8  
1.2  
1.6  
2
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
30  
26  
22  
18  
14  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =7A  
I D = 7 A  
V
G =10V  
T A =25 o  
C
Ω
-50  
0
50  
100  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
2.2  
2
8
1.8  
1.6  
1.4  
1.2  
1
6
T j =25 o  
C
T j =150 o  
C
4
2
0
0
0.4  
0.8  
1.2  
1.6  
-50  
0
50  
100  
150  
Junction Temperature ( o C )  
V SD ,Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9962AGD  
f=1.0MHz  
14  
1000  
800  
600  
400  
200  
0
12  
I D =7A  
C iss  
10  
V DS =20V  
DS =24V  
DS =32V  
V
8
6
4
2
0
V
C oss  
C rss  
1
5
9
13  
17  
21  
25  
29  
0
5
10  
15  
20  
25  
30  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
10  
100us  
0.1  
0.1  
0.05  
1ms  
0.02  
0.01  
1
10ms  
100ms  
1s  
PDM  
Single Pulse  
t
0.01  
T
0.1  
Duty factor = t/T  
Single Pulse  
T A =25 o  
Peak Tj = PDM x Rthja + Ta  
Rthia=90oC/W  
DC  
C
0.01  
0.001  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : PDIP-8  
Millimeters  
SYMBOLS  
MIN  
3.60  
0.38  
2.90  
0.36  
1.10  
0.76  
0.20  
9.00  
6.10  
7.62  
8.30  
NOM  
MAX  
5.40  
----  
A
A1  
A2  
B
4.50  
----  
3.95  
5.00  
0.56  
1.80  
1.20  
0.36  
10.20  
7.20  
8.26  
11.00  
E
0.46  
B1  
B2  
C
1.45  
A2  
A
0.98  
A1  
0.28  
B2  
D
D
9.60  
L
E
6.65  
E1  
E2  
e
7.94  
e
B1  
C
9.65  
B
2.540 BSC  
----  
E1  
L
3.18  
----  
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
E2  
Part Marking Information & Packing : PDIP-8  
Part Number  
Package Code  
meet Rohs requirement  
9962AGD  
YWWSSS  
for low voltage MOSFET only  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5

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