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AP9979GH [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9979GH
型号： AP9979GH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件： 总6页 (文件大小：241K)
中文：  中文翻译
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AP9979GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
60V  
48mΩ  
20A  
D
S
▼ Single Drive Requirement  
▼ Surface Mount Package  
G
Description  
G
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
D
S
TO-252(H)  
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9979GJ) are  
available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
20  
A
13  
A
50  
A
PD@TC=25℃  
Total Power Dissipation  
34.7  
W
Linear Derating Factor  
0.28  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
3.6  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
200806242  
AP9979GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
60  
-
-
0.06  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=13A  
VGS=4.5V, ID=7A  
V/℃  
mΩ  
RDS(ON)  
-
48  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=13A  
VDS=60V, VGS=0V  
VDS=48V ,VGS=0V  
VGS=+25V  
3
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (T=150oC)  
18  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
10  
-
25  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
+100  
ID=13A  
11  
3
18  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=48V  
VGS=4.5V  
6
-
VDS=30V  
7
-
ID=13A  
20  
19  
3
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=2.3Ω  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
990 1560  
VDS=25V  
90  
70  
-
-
f=1.0MHz  
f=1.0MHz  
1.2  
1.8  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=13A, VGS=0V  
IS=13A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
32  
37  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9979GH/J  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
10V  
7.0V  
5.0V  
T C =25 o  
C
10V  
7.0V  
T C = 150 o  
C
5.0V  
4.5V  
4.5V  
V G =3.0V  
V G =3.0V  
0
2
4
6
8
10  
0
2
4
6
8
10  
12  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
70  
2.0  
1.6  
1.2  
0.8  
0.4  
I D = 7 A  
I D =13A  
T
C =25 o  
C
V
G =10V  
60  
50  
40  
30  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
12  
1.5  
1.1  
0.7  
0.3  
9
T j =150 o  
C
T j =25 o  
C
6
3
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9979GH/J  
f=1.0MHz  
10000  
1000  
100  
14  
I D = 13 A  
12  
V DS = 30 V  
V DS =38V  
10  
8
C iss  
V
DS = 48 V  
6
C oss  
C rss  
4
2
0
10  
0
10  
20  
30  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
100us  
1ms  
0.2  
10  
0.1  
0.1  
0.05  
PDM  
0.02  
1
t
10ms  
100ms  
DC  
0.01  
T
Single Pulse  
Duty factor = t/T  
T C =25 o  
C
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.1  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
30  
20  
10  
0
VG  
V
DS =5V  
T j =25 o  
C
T j =150 o  
C
QG  
4.5V  
QGD  
QGS  
Q
Charge  
0
2
4
6
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-252  
Millimeters  
D
SYMBOLS  
MIN  
NOM MAX  
D1  
A2  
A3  
B1  
D
1.80  
0.40  
0.40  
6.00  
4.80  
3.50  
2.20  
0.5  
2.30  
0.50  
0.70  
6.50  
5.35  
4.00  
2.63  
0.85  
5.70  
1.10  
2.30  
0.50  
2.80  
0.60  
1.00  
7.00  
5.90  
4.50  
3.05  
1.20  
6.30  
1.80  
--  
E2  
D1  
E3  
F
E3  
F1  
E1  
E2  
e
E1  
5.10  
0.50  
--  
C
0.35  
0.65  
B1  
F1  
F
1.All Dimensions Are in Millimeters.  
e
e
2.Dimension Does Not Include Mold Protrusions.  
R : 0.127~0.381  
A2  
(0.1mm  
C
A3  
Part Marking Information & Packing : TO-252  
Part Number  
Package Code  
meet Rohs requirement  
9979GH  
LOGO  
Date Code (YWWSSS)  
YWWSSS  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-251  
D
Millimeters  
A
SYMBOLS  
MIN  
NOM  
MAX  
c1  
D1  
A
A1  
B1  
B2  
c
2.20  
0.90  
0.50  
0.60  
0.40  
0.40  
6.40  
5.20  
6.70  
5.40  
----  
2.30  
1.20  
0.69  
0.87  
0.50  
0.50  
6.60  
5.35  
7.00  
5.80  
2.30  
6.84  
2.40  
1.50  
0.88  
1.14  
0.60  
0.60  
6.80  
5.50  
7.30  
6.20  
----  
E
E1  
c1  
D
D1  
E
A1  
B2  
B1  
E1  
e
F
F
5.88  
7.80  
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
c
e
e
Part Marking Information & Packing : TO-251  
Part Number  
meet Rohs requirement  
for low voltage MOSFET only  
9979GJ  
Package Code  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y ：Last Digit Of The Year  
WW ：Week  
SSS ：Sequence  
6

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