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AP9T18GJ [A-POWER]

TRANSISTOR 38 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power;
AP9T18GJ
型号： AP9T18GJ
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR 38 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

开关 脉冲 晶体管
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AP9T18GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
20V  
14mΩ  
38A  
D
S
▼ Capable of 2.5V gate drive  
▼ Surface mount package  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G
D
S
TO-252(H)  
TO-251(J)  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Rating  
20  
Units  
V
VDS  
VGS  
+16  
V
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
38  
A
24  
A
140  
A
PD@TC=25℃  
Total Power Dissipation  
31.3  
W
Linear Derating Factor  
0.25  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
4
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
200809123  
AP9T18GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
20  
-
-
0.1  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=4.5V, ID=18A  
-
14  
V
GS=2.5V, ID=9A  
-
0.5  
-
-
-
28  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=5V, ID=18A  
1.5  
Forward Transconductance  
Drain-Source Leakage Current  
33  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
VDS=20V, VGS=0V  
Drain-Source Leakage Current (Tj=150oC) VDS=16V ,VGS=0V  
-
1
-
-
25  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+16V  
ID=18A  
-
-
+100  
Qg  
-
16  
3
25  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=16V  
VGS=4.5V  
VDS=10V  
ID=18A  
-
-
9
-
-
12  
80  
22  
12  
-
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=5V  
RD=0.56Ω  
VGS=0V  
-
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
-
1115 1790  
VDS=20V  
f=1.0MHz  
f=1.0MHz  
-
280  
220  
1.54  
-
-
-
-
-
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=18A, VGS=0V  
IS=18A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
19  
11  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9T18GH/J  
120  
100  
80  
60  
40  
20  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T C = 1 5 0 o  
C
T C =25 o C  
5.0V  
4.5V  
5.0V  
4.5V  
3.5V  
3.5V  
2.5V  
2.5V  
V G =1.5V  
V G =1.5V  
0
1
2
3
4
0
1
2
3
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
26  
22  
18  
14  
10  
1.6  
I D =18A  
I D =9A  
V
G =4.5V  
T
C =25 o C  
1.4  
1.2  
1.0  
0.8  
0.6  
Ω
0
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2
10  
8
1.5  
6
T j =25 o C  
1
T j =150 o C  
4
0.5  
2
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9T18GH/J  
f=1.0MHz  
10000  
1000  
100  
12  
I D =18A  
10  
V DS =10V  
V
V
DS =12V  
DS =16V  
8
6
4
2
0
C iss  
C oss  
C rss  
0
5
10  
15  
20  
25  
30  
35  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
1
Duty factor=0.5  
0.2  
0.1  
100  
10  
1
100us  
1ms  
0.1  
0.05  
PDM  
t
0.02  
T
0.01  
10ms  
100ms  
DC  
Duty factor = t/T  
T c =25 o C  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
t
Q
td(on)  
d(off)tf  
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-252  
Millimeters  
D
SYMBOLS  
MIN  
NOM MAX  
D1  
A2  
A3  
B1  
D
1.80  
0.40  
0.40  
6.00  
4.80  
3.50  
2.20  
0.5  
2.30  
0.50  
0.70  
6.50  
5.35  
4.00  
2.63  
0.85  
5.70  
1.10  
2.30  
0.50  
2.80  
0.60  
1.00  
7.00  
5.90  
4.50  
3.05  
1.20  
6.30  
1.80  
--  
E2  
D1  
E3  
F
E3  
F1  
E1  
E2  
e
E1  
5.10  
0.50  
--  
C
0.35  
0.65  
B1  
F1  
F
1.All Dimensions Are in Millimeters.  
e
e
2.Dimension Does Not Include Mold Protrusions.  
R : 0.127~0.381  
A2  
(0.1mm  
C
A3  
Part Marking Information & Packing : TO-252  
Part Number  
Package Code  
meet Rohs requirement  
9T18GH  
LOGO  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
YWWSSS  
WW：Week  
SSS：Sequence  
5
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-251  
D
Millimeters  
A
SYMBOLS  
MIN  
NOM  
MAX  
c1  
D1  
A
A1  
B1  
B2  
c
2.20  
0.90  
0.50  
0.60  
0.40  
0.40  
6.40  
5.20  
6.70  
5.40  
----  
2.30  
1.20  
0.69  
0.87  
0.50  
0.50  
6.60  
5.35  
7.00  
5.80  
2.30  
6.84  
2.40  
1.50  
0.88  
1.14  
0.60  
0.60  
6.80  
5.50  
7.30  
6.20  
----  
E
E1  
c1  
D
D1  
E
A1  
B2  
B1  
E1  
e
F
F
5.88  
7.80  
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
c
e
e
Part Marking Information & Packing : TO-251  
Part Number  
meet Rohs requirement  
for low voltage MOSFET only  
9T18GJ  
Package Code  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y ：Last Digit Of The Year  
WW ：Week  
SSS ：Sequence  
6

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