ACE4440B [ACE]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | ACE4440B |
| 厂家： | 
ACE TECHNOLOGY CO., LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：823K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACE4440B
N-Channel Enhancement Mode MOSFET
Description
The ACE4440B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
VDS=60V
ID=6A (VGS=10V)
RDS(ON)<35mΩ (VGS=10V)
RDS(ON)<40mΩ (VGS=4.5V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60
±20
6
V
V
TA=25℃
TA=70℃
Drain Current (Continuous)
ID
A
A
4.8
30
3
Drain Current (Pulsed)
IDM
PD
TA=25℃
TA=70℃
Power Dissipation
W
2
Operating temperature / storage temperature TJ/TSTG -55~150 ℃
Packaging Type
SOP-8
Ordering information
ACE4440B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2
1
ACE4440B
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Test Conditions
Static
Min
60
1
Typ
Max Unit
Drain-source breakdown
voltage
V(BR)DSS
VGS=0V, ID=250µA
V
Zero gate voltage drain current
IDSS
VGS(th)
IGSS
VDS=60V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, ID=5A
1
3
µA
V
Gate threshold voltage
Gate leakage current
1.4
100
35
40
nA
26
31
Drain-source on-state
resistance
RDS(ON)
mΩ
VGS=4.5V, ID=4A
VDS=15V, ID=5.3A
ISD=1A, VGS=0V
Forward transconductance
gFS
24
S
V
Diode forward voltage
Maximum body-diode
continuous current
VSD
0.75
1
IS
3.1
A
Switching
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
Tr
11.26 14.64
VGS=5V, VDS=30V,
ID=5.3A
3.77
4.08
4.9
5.3
nC
18.12 36.24
17.68 35.36
VGS=4.5V, VDS=30V
RL=6.8Ω, RGEN=1Ω
ns
td(off)
Tf
25
50
8.92 17.84
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Note :
Ciss
Coss
Crss
1062.8
157.26
56.56
VGS=0V, VDS=30V,
f=1.0MHz
pF
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE4440B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
3
ACE4440B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
4
ACE4440B
N-Channel Enhancement Mode MOSFET
Packing Information
SOP-8
Unit: mm
VER 1.2
5
ACE4440B
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6
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