AD8222-KGD-WP [ADI]
Instrumentation Amplifier;
| 型号： | AD8222-KGD-WP |
| 厂家： | 
ADI |
| 描述： | Instrumentation Amplifier 放大器 |
| 文件： | 总8页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Precision, Dual-Channel
Instrumentation Amplifier
AD8222-KGD
Known Good Die
FEATURES
FUNCTIONAL BLOCK DIAGRAM
AD8222-KGD
Dual-channel
Gain set with 1 resistor per amplifier (G = 1 to 10,000)
Low noise
8 nV/√Hz eNI at 1 kHz
0.25 µV p-p RTI, G = 100 to 1000 (0.1 Hz to 10 Hz)
High accuracy dc performance
–IN1
RG1
RG1
+IN1
–IN2
RG2
RG2
+IN2
120 µV maximum input offset voltage
0.4 µV/°C maximum average temperature coefficient
2.0 nA maximum input bias current
100 dB minimum CMRR at 4 kHz (G = 100 and G = 1000)
Excellent ac performance
140 kHz small signal −3 dB bandwidth (G = 100)
13 µs settling time to 0.001%
Figure 1.
Differential output option (single channel)
Fully specified
Adjustable common-mode output
Power supply operating range: 2.3 V to 18 V
Operational up to 125°C1
The AD8222-KGD can also be configured as a single-channel,
differential output in-amp. Differential outputs provide high noise
immunity, which can be useful when the output signal must
travel through a noisy environment, such as with remote
sensors. The configuration can also drive differential input
analog-to-digital converters (ADCs).
Known Good Die (KGD): these die are fully guaranteed to
data sheet specifications
The AD8222-KGD maintains a minimum CMRR of 80 dB to
4 kHz for all grades at G = 1. High CMRR over frequency
allows the AD8222-KGD to reject wideband interference and
line harmonics, greatly simplifying filter requirements. The
AD8222-KGD also has a typical CMRR drift over temperature
of just 0.07 µV/V/°C at G = 1.
APPLICATIONS
Multichannel data acquisition for
Electrocardiogram (ECG) and medical instrumentation
Industrial process controls
Wheatstone bridge sensors
Differential drives for
High resolution input ADCs
Remote sensors
The AD8222-KGD operates on both single and dual supplies.
The device is specified over the industrial temperature range of
−40°C to +85°C and is fully RoHS compliant. Furthermore, the
AD8222-KGD is operational from −40°C to +125°C1.
GENERAL DESCRIPTION
The AD8222-KGD is a dual-channel, high performance
instrumentation amplifier (in-amp) that requires only one
external resistor per amplifier to set gains of 1 to 10,000.
For a single-channel version, see the AD8221-KGD.
Additional application and technical information can be found
in the AD8222 data sheet.
The AD8222-KGD is a dual, in-amp in a small 4 mm × 4 mm
LFCSP. The device requires the same board area as a typical
single in-amp. The smaller package allows a 2× increase in
channel density and a lower cost per channel, all with no
compromise in performance.
1 See the AD8222 data sheet for expected operation from 85°C to 125°C.
Rev. 0
Document Feedback
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rights of third parties that may result fromits use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks andregisteredtrademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2019 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
AD8222-KGD
Known Good Die
TABLE OF CONTENTS
Features .............................................................................................. 1
Maximum Power Dissipation......................................................6
ESD Caution...................................................................................6
Pin Configuration and Function Descriptions..............................7
Outline Dimensions..........................................................................8
Die Specifications and Assembly Recommendations ..............8
Ordering Guide .............................................................................8
Applications....................................................................................... 1
General Description......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 6
REVISION HISTORY
10/2019—Revision 0: Initial Version
Rev. 0 | Page 2 of 8
Known Good Die
SPECIFICATIONS
AD8222-KGD
Supply voltage (VS) = 15 V, REFx voltage (VREF) = 0 V, TA = 25°C, G = 1, and load resistance (RL) = 2 kΩ, unless otherwise noted.
Table 1. Single-Ended and Differential Output Configuration
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
COMMON-MODE REJECTION RATIO (CMRR)
Common-mode voltage (VCM)=
−10 V to +10 V
CMRR DC to 60 Hz
G = 1
G = 10
G = 100
G = 1000
1 kΩ source imbalance
80
dB
dB
dB
dB
100
120
130
CMRR at 4 kHz
G = 1
80
dB
G = 10
90
dB
G = 100
G = 1000
100
100
dB
dB
CMRR Drift
NOISE
TA = −40°C to +85°C, G = 1
0.07
µV/V/°C
Voltage Noise, 1 kHz
Input Voltage Noise, eNI
RTI noise = √(eNI2 + (eNO/G)2)
+IN voltage (V+IN), −IN voltage (V−IN),
8
nV/√Hz
nV/√Hz
V
REF = 0 V
Output Voltage Noise, eNO
Return to Input (RTI)
G = 1
G = 10
G = 100 to 1000
Current Noise
V+IN, V−IN, VREF = 0 V
Frequency = 0.1 Hz to 10 Hz
75
2
µV p-p
µV p-p
µV p-p
fA/√Hz
pA p-p
0.5
0.25
40
6
Frequency = 1 kHz
Frequency = 0.1 Hz to 10 Hz
RTI VOS = (VOSI) + (VOSO/G)
VS = 5 V to 15 V
VOLTAGE OFFSET, VOS
Input Offset, VOSI
Over Temperature
Average Temperature Coefficient
Output Offset, VOSO
120
150
0.4
500
0.8
9
µV
µV
µV/°C
µV
mV
TA = −40°C to +85°C
VS = 5 V to 15 V
TA = −40°C to +85°C
Over Temperature
Average Temperature Coefficient
Offset RTI vs. Power Supply Ratio (PSR)
G = 1
G = 10
G = 100
µV/°C
VS = 2.3 V to 18 V
90
110
120
130
140
dB
dB
dB
dB
110
124
130
G = 1000
INPUT CURRENT (PER CHANNEL)
Input Bias Current, IBIAS
Over Temperature
Average Temperature Coefficient
Input Offset Current, IOFFSET
Over Temperature
0.5
2.0
3.0
nA
nA
pA/°C
nA
nA
TA = −40°C to +85°C
TA = −40°C to +85°C
1
0.2
1
1.5
Average Temperature Coefficient
1
pA/°C
Rev. 0 | Page 3 of 8
AD8222-KGD
Known Good Die
Parameter
Test Conditions/Comments
Min
−VS
1
Typ
Max
Unit
REFERENCE INPUT
Input Reference, RIN
Input Current, IIN
Voltage Range
Reference Gain to Output
Reference Gain Error
GAIN
20
50
kΩ
µA
V
V/V
%
V+IN, V−IN, VREF = 0 V
60
+VS
1
0.01
G = 1 + (49.4 kΩ/RG)
VOUT 10 V
Gain Range
Gain Error
10,000
V/V
G = 1
G = 10
G = 100
G = 1000
0.3
0.3
0.3
0.3
%
%
%
%
Gain Nonlinearity
G = 1
G = 10
VOUT = −10 V to +10 V
3
7
7
10
20
20
ppm
ppm
ppm
G = 100
Gain vs. Temperature
G = 1
G > 11
3
10
−50
ppm/°C
ppm/°C
INPUT
Input Impedance
Differential
100||2
100||2
GΩ||pF
GΩ||pF
V
V
V
V
Common Mode
Input Operating Voltage Range2
Over Temperature
Input Operating Voltage Range2
Over Temperature
OUTPUT
VS = 2.3 V to 5 V
TA = −40°C to +85°C
VS = 5 V to 18 V
TA = −40°C to +85°C
RL = 10 kΩ
−VS + 1.9
−VS + 2.0
−VS + 1.9
−VS + 2.0
+VS − 1.1
+VS − 1.2
+VS − 1.2
+VS − 1.2
Output Swing
Over Temperature
Output Swing
Over Temperature
Short-Circuit Current
POWER SUPPLY
Operating Range
Quiescent Current (per Amplifier)
Over Temperature
TEMPERATURE RANGE
Specified Performance
Operational3
VS = 2.3 V to 5 V
TA = −40°C to +85°C
VS = 5 V to 18 V
TA = −40°C to +85°C
−VS + 1.1
−VS + 1.4
−VS + 1.2
−VS + 1.6
+VS − 1.2
+VS − 1.3
+VS − 1.4
+VS − 1.5
V
V
V
V
18
mA
VS = 2.3 V to 18 V
TA = −40°C to +85°C
2.3
18
1.1
1.2
V
mA
mA
0.9
1
−40
−40
+85
+125
°C
°C
1 Does not include the effects of external resistor, RG.
2 One input grounded. G = 1.
3 See the AD8222 data sheet for expected operation from 85°C to 125°C.
Rev. 0 | Page 4 of 8
Known Good Die
AD8222-KGD
VS = 15 V, V REF = 0 V, TA = 25°C, and RL = 2 kΩ, unless otherwise noted.
Table 2. Single-Ended Output Configuration—Dynamic Performance (Both Amplifiers)
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
DYNAMIC RESPONSE
Small Signal −3 dB Bandwidth
G = 1
1200
750
140
15
kHz
kHz
kHz
kHz
G = 10
G = 100
G = 1000
Settling Time to 0.01%
G = 1 to 100
G = 1000
Settling Time to 0.001%
G = 1 to 100
G = 1000
10 V step
10 V step
10
80
µs
µs
13
110
2
µs
µs
V/µs
V/µs
Slew Rate
G = 1
G = 5 to 1000
1.5
2
2.5
Rev. 0 | Page 5 of 8
AD8222-KGD
Known Good Die
ABSOLUTE MAXIMUM RATINGS
Table 3.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8222-KGD is
limited by the associated rise in junction temperature (TJ) on
the die. At approximately 130°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit may change the stresses that
the package exerts on the die, permanently shifting the parametric
performance of the amplifiers. Exceeding a temperature of 130°C
for an extended period can result in a loss of functionality.
Parameter
Rating
VS
18 V
Indefinite
VS
Output Short-Circuit Current Duration
Input Voltage (Common Mode)
Differential Input Voltage
Temperature
VS
Storage Range
−65°C to +130°C
−40°C to +125°C
130°C
Operational Range1
Package Glass Transition (TG)
Electrostatic Discharge (ESD)
Human Body Model
Charge Device Model
ESD CAUTION
2 kV
1 kV
1 See the AD8222 data sheet for expected operation from 85°C to 125°C.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. 0 | Page 6 of 8
Known Good Die
AD8222-KGD
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
+V
OUT1
OUT2
–V
S
S
16
15
14
13
–IN1
RG1
1
12
–IN2
RG2
2A
11B
RG1
2B
11A
RG2
AD8222-KGD
TOP VIEW
(Not to Scale)
RG1
3A
10B
RG2
RG1
+IN1
3B
4
10A
9
RG2
+IN2
6
7
5
8
+V REF1
REF2 –V
S
S
Figure 2. Pad Configuration
Table 4. Pad Function Descriptions
Pad No.
Mnemonic
−IN1
RG1
RG1
RG1
RG1
+IN1
+VS
REF1
REF2
−VS
+IN2
RG2
RG2
RG2
RG2
−IN2
−VS
OUT2
OUT1
+VS
Pad Type
Single
Single
Double
Double
Single
Single
Single
Double
Double
Single
Single
Single
Double
Double
Single
Single
Single
Single
Single
Single
X-Axis (μm)
−1088
−1088
−1094
−1096
−1088
−1088
−763
−474
+472
+763
+1088
+1088
+1096
+1094
+1088
+1088
+702
Y-Axis (μm)
+859
+675
+431
−429
Description
1
Negative Input In-Amp 1
Gain Resistor In-Amp 1
Gain Resistor In-Amp 1
Gain Resistor In-Amp 1
Gain Resistor In-Amp 1
Positive Input In-Amp 1
Positive Supply
Reference Adjust In-Amp 1
Reference Adjust In-Amp 2
Negative Supply
Positive Input In-Amp 2
Gain Resistor In-Amp 2
Gain Resistor In-Amp 2
Gain Resistor In-Amp 2
Gain Resistor In-Amp 2
Negative Input In-Amp 2
Negative Supply
2A
2B
3A
3B
4
5
6
7
8
−672
−857
−1035
−1018
−1019
−1035
−857
−672
−431
+431
+675
9
10A
10B
11A
11B
12
13
14
15
16
+859
+1011
+1012
+1012
+1011
+204
−204
−702
Output In-Amp 2
Output In-Amp 1
Positive Supply
Rev. 0 | Page 7 of 8
AD8222-KGD
Known Good Die
OUTLINE DIMENSIONS
2.460
1.094
1.094
1.088
1.088
0.3048
0.702
0.204
0.702
0.204
0.076 × 0.076
(Pads 1-2A, 3B-5, 8-10A, 11B-16)
16
15
14
13
1
12
1.012
1.011
0.859
0.675
0.431
2A
2B
11B
0.859
11A
0.675
0.431
1.011
2.365
0.429
0.672
0.43052
0.672
0.857
1.019
1.035
1.035
3A
10B
0.857
1.018
3B
4
10A
9
6
7
5
8
TOP VIEW
0.176 × 0.076
SIDE VIEW
(CIRCUIT SIDE)
0.076 × 0.176
(Pads 6-7)
(Pads 2B-3A and 10B-11A)
0.474
0.472
0.763
1.096
0.763
1.088
1.088
1.096
Figure 3. 16-Pad Bare Die [CHIP]
(C-16-3)
Dimensions shown in millimeters
DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS
Table 5. Die Specifications
Parameter
Value
Unit
Scribe Line Width
Die Size (Maximum Size)
Thickness
75
μm
μm
μm
2460 × 2365
304.8
Bond Pads (Minimum Size)
Bond Pad Composition
Backside
Passivation
ESD, Human Body Model (HBM)
76 × 76
μm
%
Aluminum (Al), copper (Cu), (0.5%)
None1
Doped oxide/silicon (Si), nitride (N)
2000
Not applicable
Not applicable
V
1 If connecting the backside to a voltage potential, tie the backside to the −VS pin. Otherwise, leave the backside floating.
Table 6. Assembly Recommendations
Assembly Component
Recommendation
Die Attach
Bonding Method
Bonding Sequence
Ablestik 8290 conductive
Gold ball or aluminum wedge
Unspecified
ORDERING GUIDE
Model1
Temperature Range
Package Description
16-Pad Bare Die [CHIP], Waffle Pack
Package Option
AD8222-KGD-WP
−40°C to +85°C
C-16-3
1 The AD8222-KGD-WP is an RoHS compliant part.
©2019 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D20319-0-10/19(0)
Rev. 0 | Page 8 of 8
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