AD823AR [ADI]

Dual, 16 MHz, Rail-to-Rail FET Input Amplifier; 双通道, 16 MHz的轨到轨FET输入放大器
AD823AR
型号: AD823AR
厂家: ADI    ADI
描述:

Dual, 16 MHz, Rail-to-Rail FET Input Amplifier
双通道, 16 MHz的轨到轨FET输入放大器

放大器
文件: 总16页 (文件大小:442K)
中文:  中文翻译
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Dual, 16 MHz, Rail-to-Rail  
FET Input Amplifier  
a
AD823  
CONNECTION DIAGRAM  
8-Pin Plastic Mini-DIP  
and  
FEATURES  
Single Supply Operation  
Output Swings Rail to Rail  
8-Lead SOIC  
Input Voltage Range Extends Below Ground  
Single Supply Capability from +3 V to +36 V  
High Load Drive  
Capacitive Load Drive of 500 pF, G = +1  
Output Current of 15 mA, 0.5 V from Supplies  
Excellent AC Performance on 2.6 mA/Amplifier  
–3 dB Bandwidth of 16 MHz, G = +1  
350 ns Settling Time to 0.01% (2 V Step)  
Slew Rate of 22 V/s  
1
2
3
4
8
7
6
5
+V  
S
OUT1  
–IN1  
+IN1  
OUT2  
–IN2  
+IN2  
–V  
S
AD823  
Good DC Performance  
800 V Max Input Offset Voltage  
2 V/؇C Offset Voltage Drift  
25 pA Max Input Bias Current  
Low Distortion  
The AD823 is available over the industrial temperature range of  
–40°C to +85°C and is offered in both 8-pin plastic DIP and  
SOIC packages.  
–108 dBc Worst Harmonic @ 20 kHz  
Low Noise  
16 nV/Hz @ 10 kHz  
R
C
V
= 100k  
= 50pF  
= +3V  
L
L
S
3V  
No Phase Inversion with Inputs to the Supply Rails  
APPLICATIONS  
Battery Powered Precision Instrumentation  
Photodiode Preamps  
Active Filters  
12- to 16-Bit Data Acquisition Systems  
Medical Instrumentation  
GND  
PRODUCT DESCRIPTION  
500mV  
200µs  
The AD823 is a dual precision, 16 MHz, JFET input op amp  
that can operate from a single supply of +3.0 V to +36 V, or  
dual supplies of ±1.5 V to ±18 V. It has true single supply  
capability with an input voltage range extending below ground  
in single supply mode. Output voltage swing extends to within  
50 mV of each rail for IOUT 100 µA providing outstanding out-  
put dynamic range.  
Figure 1. Output Swing, VS = +3 V, G = +1  
2
1
0
Offset voltage of 800 µV max, offset voltage drift of 2 µV/°C,  
input bias currents below 25 pA and low input voltage noise  
provide dc precision with source impedances up to a Gigohm.  
16 MHz, –3 dB bandwidth, –108 dB THD @ 20 kHz and  
22 V/µs slew rate are provided with a low supply current of  
2.6 mA per amplifier. The AD823 drives up to 500 pF of direct  
capacitive load as a follower, and provides an output current of  
15 mA, 0.5 V from the supply rails. This allows the amplifier to  
handle a wide range of load conditions.  
–1  
–2  
–3  
–4  
V
= +5V  
S
–5  
–6  
G = +1  
–7  
–8  
This combination of ac and dc performance, plus the outstand-  
ing load drive capability results in an exceptionally versatile am-  
plifier for applications such as A/D drivers, high-speed active  
filters, and other low voltage, high dynamic range systems.  
1k  
10k  
100k  
FREQUENCY – Hz  
1M  
10M  
Figure 2. Small Signal Bandwidth, G = +1  
REV. 0  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Analog Devices.  
© Analog Devices, Inc., 1995  
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.  
Tel: 617/329-4700 Fax: 617/326-8703  
(@ TA = +25°C, VS = +5 V, RL = 2 kto +2.5 V, unless otherwise noted)  
AD823–SPECIFICATIONS  
AD823A  
Parameter  
Conditions  
Min  
Typ  
Max Units  
DYNAMIC PERFORMANCE  
–3 dB Bandwidth, VO 0.2 V p-p  
Full Power Response  
Slew Rate  
G = +1  
O = 2 V p-p  
G = –1, VO = 4 V Step  
G = –1, VO = 2 V Step  
12  
14  
16  
3.5  
22  
MHz  
MHz  
V/µs  
V
Settling Time  
to 0.1%  
to 0.01%  
320  
350  
ns  
ns  
NOISE/DISTORTION PERFORMANCE  
Input Voltage Noise  
Input Current Noise  
f = 10 kHz  
f = 1 kHz  
RL = 600 to 2.5 V, VO = 2 V p-p,  
f = 20 kHz  
16  
1
–108  
nV/Hz  
fA/Hz  
dBc  
Harmonic Distortion  
Crosstalk  
f = 1 kHz  
f = 1 MHz  
RL = 5 kΩ  
RL = 5 kΩ  
–130  
–93  
dB  
dB  
DC PERFORMANCE  
Initial Offset  
Max Offset Over Temperature  
Offset Drift  
Input Bias Current  
at TMAX  
Input Offset Current  
at TMAX  
0.2  
0.3  
2
3
0.5  
2
0.8  
2.0  
mV  
mV  
µV/°C  
pA  
nA  
pA  
V
V
CM = 0 V to +4 V  
O = 0.2 V to 4 V  
25  
5
20  
0.5  
nA  
Open-Loop Gain  
RL = 2 kΩ  
20  
20  
45  
V/mV  
V/mV  
TMIN to TMAX  
INPUT CHARACTERISTICS  
Input Common-Mode Voltage Range  
Input Resistance  
Input Capacitance  
Common-Mode Rejection Ratio  
–0.2 to 3 –0.2 to 3.8  
V
pF  
dB  
1013  
1.8  
VCM = 0 V to 3 V  
60  
76  
OUTPUT CHARACTERISTICS  
Output Voltage Swing  
IL = ±100 µA  
0.025 to 4.975  
V
IL = ±2 mA  
0.08 to 4.92  
V
IL = ±10 mA  
0.25 to 4.75  
V
Output Current  
Short Circuit Current  
V
OUT = 0.5 V to 4.5 V  
16  
40  
30  
500  
mA  
mA  
mA  
pF  
Sourcing to 2.5 V  
Sinking to 2.5 V  
G = +1  
Capacitive Load Drive  
POWER SUPPLY  
Operating Range  
Quiescent Current  
Power Supply Rejection Ratio  
+3  
70  
+36  
5.6  
V
mA  
dB  
T
MIN to TMAX, Total  
5.2  
80  
VS = +5 V to +15 V, TMIN to TMAX  
Specification subject to change without notice.  
–2–  
REV. 0  
AD823  
(@ TA = +25°C, VS = +3.3 V, RL = 2 kto +1.65 V, unless otherwise noted)  
SPECIFICATIONS  
AD823A  
Typ  
Parameter  
Conditions  
Min  
Max Units  
DYNAMIC PERFORMANCE  
–3 dB Bandwidth, VO 0.2 V p-p  
Full Power Response  
Slew Rate  
G = +1  
12  
13  
15  
3.2  
20  
MHz  
MHz  
V/µs  
V
O = 2 V p-p  
G = –1, VO = 2 V Step  
G = –1, VO = 2 V Step  
Settling Time  
to 0.1%  
to 0.01%  
250  
300  
ns  
ns  
NOISE/DISTORTION PERFORMANCE  
Input Voltage Noise  
Input Current Noise  
Harmonic Distortion  
Crosstalk  
f = 10 kHz  
f = 1 kHz  
RL = 100 , VO = 2 V p-p, f = 20 kHz  
16  
1
–93  
nV/Hz  
fA/Hz  
dBc  
f = 1 kHz  
f = 1 MHz  
RL = 5 kΩ  
RL = 5 kΩ  
–130  
–93  
dB  
dB  
DC PERFORMANCE  
Initial Offset  
Max Offset Over Temperature  
Offset Drift  
Input Bias Current  
at TMAX  
Input Offset Current  
at TMAX  
0.2  
0.5  
2
3
0.5  
2
1.5  
2.5  
mV  
mV  
µV/°C  
pA  
nA  
pA  
V
V
CM = 0 V to +2 V  
O = 0.2 V to 2 V  
25  
5
20  
0.5  
nA  
Open-Loop Gain  
RL = 2 kΩ  
15  
12  
30  
V/mV  
V/mV  
TMIN to TMAX  
INPUT CHARACTERISTICS  
Input Common-Mode Voltage Range  
Input Resistance  
Input Capacitance  
Common-Mode Rejection Ratio  
–0.2 to 1 –0.2 to 1.8  
V
pF  
dB  
1013  
1.8  
VCM = 0 V to 1 V  
54  
70  
OUTPUT CHARACTERISTICS  
Output Voltage Swing  
IL = ±100 µA  
0.025 to 3.275  
V
IL = ±2 mA  
0.08 to 3.22  
V
IL = ±10 mA  
0.25 to 3.05  
V
Output Current  
Short Circuit Current  
V
OUT = 0.5 V to 2.5 V  
15  
40  
30  
500  
mA  
mA  
mA  
pF  
Sourcing to 1.5 V  
Sinking to 1.5 V  
G = +1  
Capacitive Load Drive  
POWER SUPPLY  
Operating Range  
Quiescent Current  
Power Supply Rejection Ratio  
+3  
+36  
5.7  
V
mA  
dB  
T
MIN to TMAX, Total  
5.0  
80  
VS = +3.3 V to +15 V, TMIN to TMAX 70  
Specification subject to change without notice.  
REV. 0  
–3–  
(@ TA = +25°C, VS = ±15 V, RL = 2 kto 0 V, unless otherwise noted)  
AD823–SPECIFICATIONS  
AD823A  
Parameter  
Conditions  
Min  
Typ  
Max Units  
DYNAMIC PERFORMANCE  
–3 dB Bandwidth, VO 0.2 V p-p  
Full Power Response  
Slew Rate  
G = +1  
O = 2 V p-p  
G = –1, VO = 10 V Step  
G = –1, VO = 10 V Step  
12  
17  
16  
4
25  
MHz  
MHz  
V/µs  
V
Settling Time  
to 0.1%  
to 0.01%  
550  
650  
ns  
ns  
NOISE/DISTORTION PERFORMANCE  
Input Voltage Noise  
Input Current Noise  
f = 10 kHz  
f = 1 kHz  
RL = 600 , VO = 10 V p-p,  
f = 20 kHz  
16  
1
–90  
nV/Hz  
fA/Hz  
dBc  
Harmonic Distortion  
Crosstalk  
f = 1 kHz  
f = 1 MHz  
RL = 5 kΩ  
RL = 5 kΩ  
–130  
–93  
dB  
dB  
DC PERFORMANCE  
Initial Offset  
Max Offset Over Temperature  
Offset Drift  
0.7  
1.0  
2
3.5  
7
mV  
mV  
µV/°C  
pA  
pA  
nA  
Input Bias Current  
V
V
CM = 0 V  
CM = –10 V  
5
30  
60  
0.5  
2
at TMAX  
Input Offset Current  
at TMAX  
VCM = 0 V  
5
20  
pA  
nA  
0.5  
Open-Loop Gain  
VO = +10 V to –10 V  
RL = 2 kΩ  
30  
30  
60  
V/mV  
V/mV  
TMIN to TMAX  
INPUT CHARACTERISTICS  
Input Common-Mode Voltage Range  
Input Resistance  
Input Capacitance  
Common-Mode Rejection Ratio  
–15.2 to 13 –15.2 to 13.8  
V
pF  
dB  
1013  
1.8  
VCM = –15 V to +13 V  
66  
82  
OUTPUT CHARACTERISTICS  
Output Voltage Swing  
IL = ±100 µA  
–14.95 to +14.95  
V
IL = ±2 mA  
–14.92 to +14.92  
V
IL = ±10 mA  
–14.75 to +14.75  
V
Output Current  
Short Circuit Current  
V
OUT = –14.5 V to +14.5 V  
17  
80  
60  
500  
mA  
mA  
mA  
pF  
Sourcing to 0 V  
Sinking to 0 V  
G = +1  
Capacitive Load Drive  
POWER SUPPLY  
Operating Range  
Quiescent Current  
Power Supply Rejection Ratio  
+3  
+36  
8.4  
V
mA  
dB  
T
MIN to TMAX, Total  
7.0  
80  
VS = +5 V to +15 V, TMIN to TMAX 70  
Specification subject to change without notice.  
–4–  
REV. 0  
AD823  
ABSOLUTE MAXIMUM RATINGS1  
2.0  
1.5  
1.0  
0.5  
0
8-PIN MINI-DIP PACKAGE  
T
= +150°C  
J
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +36 V  
Internal Power Dissipation2  
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts  
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts  
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±VS  
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±1.2 V  
Output Short Circuit Duration  
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves  
Storage Temperature Range N, R . . . . . . . . .65°C to +125°C  
Operating Temperature Range . . . . . . . . . . . . 40°C to +85°C  
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C  
8-PIN SOIC PACKAGE  
NOTES  
1Stresses above those listed under “Absolute Maximum Ratings” may cause  
permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in the  
operational section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect device reliability.  
2Specification is for device in free air:  
–50 –40 –30 –20 –10  
0
10 20 30 40 50 60 70 80 90  
AMBIENT TEMPERATURE –  
°C  
Figure 3. Maximum Power Dissipation vs. Temperature  
8-Pin Plastic Package: θJA = 90°C/Watt  
8-Pin SOIC Package: θJA = 160°C/Watt  
ORDERING GUIDE  
Model  
Temperature Range  
Package Description  
Package Option  
AD823AN  
AD823AR  
AD823AR-REEL  
40°C to +85°C  
40°C to +85°C  
40°C to +85°C  
8-Pin Plastic DIP  
8-Pin Plastic SOIC  
SOIC on Reel  
N-8  
SO-8  
SO-8  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection.  
Although the AD823 features proprietary ESD protection circuitry, permanent damage may  
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD  
precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
REV. 0  
–5–  
AD823–Typical Characteristics  
80  
100  
90  
V
= +5V  
S
V
= +5V  
S
70  
60  
50  
40  
30  
20  
10  
0
317 UNITS  
= 0.4pA  
314 UNITS  
= 40µV  
80  
70  
60  
50  
40  
30  
20  
10  
0
–200  
–150  
–100  
–50  
0
50  
100  
150  
200  
0
1
2
3
4
5
6
7
8
9
10  
INPUT OFFSET VOLTAGE – µV  
INPUT BIAS CURRENT – pA  
Figure 4. Typical Distribution of Input Offset Voltage  
Figure 7. Typical Distribution of Input Bias Current  
22  
10k  
V
= +5V  
S
20  
18  
16  
14  
12  
V
V
= +5V  
= 0V  
S
–55°C TO +125°C  
103 UNITS  
CM  
1k  
100  
10  
8
10  
1
6
4
2
0
0.1  
–6 –5 –4 –3 –2 –1  
0
1
2
3
4
5
6
7
0
25  
50  
75  
100  
125  
INPUT OFFSET VOLTAGE DRIFT – µV/°C  
TEMPERATURE – °C  
Figure 5. Typical Distribution of Input Offset Voltage Drift  
Figure 8. Input Bias Current vs. Temperature  
3
1k  
V
= +5V  
V
= ±15V  
S
S
2
1
100  
10  
1
0
–1  
–2  
–3  
–4  
0.1  
–16  
–5  
–4  
–3  
–2  
–1  
0
1
2
3
4
5
–12  
–8  
–4  
0
4
8
12  
16  
COMMON MODE VOLTAGE – Volts  
COMMON MODE VOLTAGE – Volts  
Figure6. InputBiasCurrentvs. Common-ModeVoltage  
Figure 9. Input Bias Current vs. Common-Mode Voltage  
–6–  
REV. 0  
AD823  
95  
94  
110  
100  
90  
V
R
= +5V  
= 2k  
S
L
93  
92  
V
= ± 2.5V  
S
91  
90  
89  
88  
80  
70  
87  
86  
60  
100  
–55  
–25  
5
35  
65  
95  
125  
1k  
100k  
500k  
10k  
LOAD RESISTANCE – Ω  
TEMPERATURE – °C  
Figure 10. Open-Loop Gain vs. Load Resistance  
Figure 13. Open-Loop Gain vs. Temperature  
100  
1k  
100  
R
= 10k  
= 1kΩ  
L
80  
60  
40  
20  
0
80  
60  
40  
20  
0
PHASE  
100  
10  
1
R
R
L
GAIN  
= 100Ω  
L
R
C
= 2k  
= 20pF  
L
L
0.1  
–20  
100M  
–20  
100  
–2.5 –2.0 –1.5 –1.0 –0.5  
0
0.5  
1.0  
1.5  
2.0  
2.5  
1k  
10k  
100k  
1M  
10M  
OUTPUT VOLTAGE – Volts  
FREQUENCY – Hz  
Figure 11. Open-Loop Gain vs. Output Voltage, VS = ±2.5 V  
Figure 14. Open-Loop Gain and Phase vs. Frequency  
100  
–40  
V
= +5V  
S
R
= 600  
–50  
–60  
L
V
V
R
= +3V  
S
30  
10  
3
= 2Vp-p  
OUT  
= 100Ω  
ALL  
OTHERS  
–70  
L
V
V
R
= ±15V  
S
–80  
= 10Vp-p,  
OUT  
= 600Ω  
V
= +3V,  
= 2Vp-p,  
S
V
= ±2.5V  
= 2Vp-p  
S
L
V
R
OUT  
= 5kΩ  
V
R
–90  
OUT  
= 1kΩ  
L
L
V
V
R
= +5V  
S
–100  
–110  
= 2Vp-p  
OUT  
= 5kΩ  
L
10  
100  
1k  
10k  
100k  
1M  
100  
1k  
10k  
FREQUENCY – Hz  
100k  
1M  
FREQUENCY – Hz  
Figure 12. Total Harmonic Distortion vs. Frequency  
Figure 15. Input Voltage Noise vs. Frequency  
REV. 0  
–7–  
AD823–Typical Characteristics  
90  
80  
70  
60  
50  
40  
30  
20  
5
V
= ±15V  
S
G = +1  
4
C
= 20pF  
L
L
R
= 2k  
V
= +5V  
S
3
2
1
0
–55°C  
+27°C  
–1  
–2  
–3  
+125°C  
–4  
–5  
0.3 3.27 6.24 9.21 12.18 15.15 18.12 21.09 24.06 27.03 30  
FREQUENCY – MHz  
10  
100  
1k  
10k  
100k  
1M  
10M  
FREQUENCY – Hz  
Figure 16. Closed Loop Gain vs. Frequency  
Figure 19. Common-Mode Rejection vs. Frequency  
100  
10  
V
= +5V  
S
V
= +5V  
S
GAIN = +1  
10  
1.0  
1
V
– V  
OH  
S
+25°C  
V
OL  
+25°C  
0.1  
V
OL  
+25°C  
0.1  
0.01  
0.1  
0.01  
100  
1k  
10k  
100k  
1M  
10M  
1
10  
100  
LOAD CURRENT – mA  
FREQUENCY – Hz  
Figure 17. Output Resistance vs. Frequency, VS = 5 V,  
Gain = +1  
Figure 20. Output Saturation Voltage vs. Load Current  
10  
10  
V
C
= ±15V  
= 20pF  
S
8
6
1%  
L
0.1%  
0.01%  
+125°C  
8
+25°C  
4
6
2
–55°C  
0
4
2
0
–2  
–4  
–6  
–8  
–10  
0.1%  
400  
1%  
0.01%  
0
5
10  
15  
20  
100  
200  
300  
500  
600  
700  
SUPPLY VOLTAGE – ±Volts  
SETTLING TIME – ns  
Figure 21. Quiescent Current vs. Supply Voltage  
Figure 18. Inverter Settling Time vs. Output Step Size  
–8–  
REV. 0  
AD823  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
21  
18  
15  
R
V
S
IN  
V
= +5V  
S
C
L
+PSRR  
V
= +5V  
S
12  
9
–PSRR  
= 45°  
M
6
= 20°  
M
3
0
100  
1k  
10k  
FREQUENCY – Hz  
1M  
10M  
0
1
2
3
4
5
6
7
8
9
10  
100k  
CAPACITOR – pF ϫ 1000  
Figure 22. Power Supply Rejection vs. Frequency  
Figure 25. Capacitive Load vs. Series Resistance  
30  
–30  
R
= 2kΩ  
L
V
= +5V  
–40  
–50  
S
G = +1  
–60  
20  
10  
0
–70  
V
= ±15V  
S
–80  
–90  
–100  
–110  
V
V
= +5V  
= +3V  
S
–120  
–130  
S
10k  
100k  
1M  
10M  
1k  
10k  
100k  
1M  
10M  
FREQUENCY – Hz  
FREQUENCY – Hz  
Figure 23. Large Signal Frequency Response  
Figure 26. Crosstalk vs. Frequency  
V
V
= +3V  
S
R
C
V
= 100k  
= 50pF  
= +3V  
L
= 2.9Vp-p  
IN  
L
S
G = –1  
3V  
GND  
500mV  
10µs  
100k  
+3V  
200µs  
500mV  
100k  
V
= 2.9V p-p  
IN  
V
OUT  
50  
50pF  
Figure 24. Output Swing, VS = + 3 V, G = +1  
100k  
Figure 27. Output Swing, VS = +3 V, G = –1  
REV. 0  
–9–  
AD823–Typical Characteristics  
5V  
R
L
C
L
R
F
= 300Ω  
= 50pF  
= R = 2kΩ  
G
V
V
G = 1  
= ±15V  
S
= 20Vp-p  
IN  
500mV  
200µs  
20µs  
5V  
GND  
+15V  
–15V  
Figure 28. Output Swing, VS = +5 V, G = –1  
20kHz, 20Vp-p  
50pF  
604Ω  
Figure 31. Output Swing, VS = ±15 V, G = +1  
5V  
R
L
C
L
= 2kΩ  
= 50pF  
V
V
= +3V  
S
= 100mV STEP  
IN  
G =+1  
1.55V  
1.45V  
100ns  
500mV  
25mV  
50ns  
GND  
Figure 32. Pulse Response, VS = +5 V, G = +1  
Figure 29. Pulse Response, VS = +3 V, G = +1  
5V  
V
= +5V  
V
= +5V  
S
S
G = +1  
G =+2  
R
L
C
L
= 2k  
= 470pF  
R
L
C
L
= 2kΩ  
= 50pF  
50mV  
200ns  
500mV  
100ns  
GND  
Figure 33. Pulse Response, VS = +5 V, G = +1, CL = 470 pF  
Figure 30. Pulse Response, VS = +5 V , G = +2  
–10–  
REV. 0  
AD823  
R
L
C
L
= 100kΩ  
= 50pF  
10V  
–10V  
5V  
500ns  
Figure 34. Pulse Response, VS = ±15 V, G = +1  
THEORY OF OPERATION  
of 1 mV max and offset drift of 2 µV/°C are achieved through  
the use of Analog Devices’ advanced thin-film trimming  
techniques.  
This AD823 is fabricated on Analog Devices’ proprietary  
complementary bipolar (CB) process that enables the construc-  
tion of pnp and npn transistors with similar fTs in the 600 MHz  
to 800 MHz region. In addition, the process also features  
N-channel JFETs, which are used in the input stage of the AD823.  
These process features allow the construction of high frequency,  
low distortion op amps with picoampere input currents. This  
design uses a differential-output input stage to maximize band-  
width and headroom (see Figure 35). The smaller signal swings  
required on the S1P, S1N outputs reduce the effect of nonlinear  
currents due to junction capacitances and improve the distortion  
performance. With this design harmonic distortion of better  
than –91 dB @ 20 kHz into 600 with VOUT = 4 V p-p on a  
single 5 volt supply is achieved. The complementary common-  
emitter design of the output stage provides excellent load drive  
without the need for emitter followers, thereby improving the  
output range of the device considerably with respect to conven-  
tional op amps. The AD823 can drive 20 mA with the outputs  
within 0.6 V of the supply rails. The AD823 also offers out-  
standing precision for a high speed op amp. Input offset voltages  
A “Nested Integrator” topology is used in the AD823 (see small-  
signal schematic shown in Figure 36). The output stage can be  
modeled as an ideal op amp with a single-pole response and a  
unity-gain frequency set by transconductance gm2 and capacitor  
C2. R1 is the output resistance of the input stage; gm is the in-  
put transconductance. C1 and C5 provide Miller compensation  
for the overall op amp. The unity gain frequency will occur at  
gm/C5. Solving the node equations for this circuit yields:  
A0  
VOUT  
Vi  
=
gm2  
sR1[ C 1(A2 + 1)] + 1)  
+ 1  
(
× s  
C2  
where:  
A0 = gmgm2R2R1 (Open Loop Gain of Op Amp)  
A2 = gm2R2 (Open Loop Gain of Output Stage)  
V
CC  
Q44  
A=1  
Q43  
Q58  
Q55  
Q49  
I6  
R42  
R37  
V
+ 0.3V  
V1  
I5  
BE  
Q57  
A=19  
Q61  
Q72  
Q18  
C2  
Q46  
J1  
J6  
V
V
INP  
R44  
R28  
V
Q54  
OUT  
Q21  
INN  
S1P  
S1N  
Q62  
Q60  
V
C1  
CC  
Q48  
V
B
Q53  
Q35  
Q17  
A=19  
C6  
I2  
R33  
R43  
I1  
Q59  
A=1  
I4  
I3  
Q56  
Q52  
V
EE  
Figure 35. Simplified Schematic  
–11–  
REV. 0  
AD823  
The first pole in the denominator is the dominant pole of the  
amplifier, and occurs at about 18 Hz. This equals the input  
stage output impedance R1 multiplied by the Miller-multiplied  
value of C1. The second pole occurs at the unity-gain band-  
width of the output stage, which is 23 MHz. This type of archi-  
tecture allows more open loop gain and output drive to be  
obtained than a standard two-stage architecture would allow.  
APPLICATION NOTES  
INPUT CHARACTERISTICS  
In the AD823, n-channel JFETs are used to provide a low  
offset, low noise, high impedance input stage. Minimum input  
common-mode voltage extends from 0.2 V below –VS to 1 V  
less than +VS. Driving the input voltage closer to the positive  
rail will cause a loss of amplifier bandwidth and increased  
common-mode voltage error.  
OUTPUT IMPEDANCE  
The AD823 does not exhibit phase reversal for input voltages  
up to and including +VS. Figure 37a shows the response of an  
AD823 voltage follower to a 0 V to +5 V (+VS) square wave  
input. The input and output are superimposed. The output  
polarity tracks the input polarity up to +VS—no phase reversal.  
The reduced bandwidth above a 4 V input causes the rounding  
of the output wave form. For input voltages greater than +VS, a  
resistor in series with the AD823’s plus input will prevent phase  
reversal, at the expense of greater input voltage noise. This is il-  
lustrated in Figure 37b.  
The low frequency open loop output impedance of the  
common-emitter output stage used in this design is approxi-  
mately 30 k. While this is significantly higher than a typical  
emitter follower output stage, when connected with feedback  
the output impedance is reduced by the open loop gain of the  
op amp. With 109 dB of open loop gain the output impedance  
is reduced to less than 0.2 . At higher frequencies the output  
impedance will rise as the open loop gain of the op amp drops;  
however, the output also becomes capacitive due to the integra-  
tor capacitors C1 and C2. This prevents the output impedance  
from ever becoming excessively high (see Figure 17), which can  
cause stability problems when driving capacitive loads. In fact,  
the AD823 has excellent cap-load drive capability for a high fre-  
quency op amp. Figure 33 shows the AD823 connected as a fol-  
lower while driving 470 pF direct capacitive load. Under these  
conditions the phase margin is approximately 20°. If greater  
phase margin is desired a small resistor can be used in series  
with the output to decouple the effect of the load capacitance  
from the op amp (see Figure 25). In addition, running the part  
at higher gains will also improve the capacitive load drive capa-  
bility of the op amp.  
1V  
2µs  
100  
90  
10  
0%  
GND  
1V  
a. Response with RP = 0; VIN from 0 to VS  
C1  
S1N  
1V  
1V  
10µs  
g
g
VI  
VI  
R1  
R1  
m
m
V
OUT  
100  
90  
S1P  
C5  
+V  
S
C2  
R2  
g
m2  
10  
0%  
GND  
Figure 36. Small Signal Schematic  
1V  
+5V  
R
P
V
IN  
AD823  
V
OUT  
b. VIN = 0 to +VS + 200 mV; VOUT = 0 to +VS; RP = 49.9 kΩ  
Figure 37. AD823 Input Response  
–12–  
REV. 0  
AD823  
Since the input stage uses n-channel JFETs, input current dur-  
ing normal operation is negative; the current flows out from the  
input terminals. If the input voltage is driven more positive than  
+VS – 0.4 V, the input current will reverse direction as internal  
device junctions become forward biased. This is illustrated in  
Figure 6.  
Figure 38 shows a schematic of an AD823 being used to drive  
both the input and reference input of an AD1672, a 12-bit  
3 MSPS single supply A/D converter. One amplifier is config-  
ured as a unity gain follower to drive the analog input of the  
AD1672 which is configured to accept an input voltage that  
ranges from 0 to 2.5 V.  
A current limiting resistor should be used in series with the in-  
put of the AD823 if there is a possibility of the input voltage ex-  
ceeding the positive supply by more than 300 mV, or if an input  
voltage will be applied to the AD823 when ±VS = 0. The ampli-  
fier will be damaged if left in that condition for more than 10  
seconds. A 1 kresistor allows the amplifier to withstand up to  
10 volts of continuous overvoltage, and increases the input volt-  
age noise by a negligible amount.  
+5VA  
+5VD  
+5VD  
+5VA  
8
0.1  
µF  
0.1  
µF  
10  
µF  
0.1µF  
10µF  
10µF  
0.1µF  
28 19  
+V +V  
CC DD  
2
3
20  
21  
22  
REFOUT  
AIN1  
AIN2  
1
15  
49.9Ω  
OTR  
V
IN  
13  
14  
12  
11  
10  
9
BIT1 (MSB)  
AD823  
AD1672  
Input voltages less than –VS are a completely different story.  
The amplifier can safely withstand input voltages 20 volts below  
the minus supply voltage as long as the total voltage from the  
positive supply to the input terminal is less than 36 volts. In  
addition, the input stage typically maintains picoamp level input  
currents across that input voltage range.  
BIT2  
BIT3  
BIT4  
BIT5  
BIT6  
5
6
V
REF  
(1.25V)  
7
23  
24  
25  
26  
REFIN  
8
IN COM  
NCOMP2  
NCOMP1  
4
7
6
5
4
3
2
1
BIT7  
BIT8  
BIT9  
BIT10  
BIT11  
1k  
1k  
The AD823 is designed for 16 nV/Hz wideband input voltage  
noise and maintains low noise performance to low frequencies  
(refer to Figure 15). This noise performance, along with the  
AD823’s low input current and current noise means that the  
AD823 contributes negligible noise for applications with source  
resistances greater than 10 kand signal bandwidths greater  
than 1 kHz.  
27  
16  
ACOM  
BIT12 (LSB)  
REF  
D
CLOCK  
COM COM  
19  
18  
Figure 38. AD823 Driving Input and Reference of the  
AD1672, a 12-Bit 3 MSPS A/D Converter  
OUTPUT CHARACTERISTICS  
The AD823’s unique bipolar rail-to-rail output stage swings  
within 25 mV of the supplies with no external resistive load. The  
AD823’s approximate output saturation resistance is 25 Ω  
sourcing and sinking. This can be used to estimate output satu-  
ration voltage when driving heavier current loads. For instance,  
when driving 5 mA, the saturation voltage to the rails will be ap-  
proximately 125 mV.  
The other amplifier is configured as a gain of two to drive the  
reference input from a 1.25 V reference. Although the AD1672  
has its own internal reference, there are systems that require  
greater accuracy than the internal reference provides. On the  
other hand, if the AD1672 internal reference is used, the second  
AD823 amplifier can be used to buffer the reference voltage for  
driving other circuitry while minimally loading the reference  
source.  
If the AD823’s output is driven hard against the output satura-  
tion voltage, it will recover within 250 ns of the input returning  
to the amplifier’s linear operating region.  
The circuit was tested with a 500 kHz sine wave input that was  
heavily low pass filtered (60 dB) to minimize the harmonic con-  
tent at the input to the AD823. The digital output of the  
AD1672 was analyzed by performing an FFT.  
A/D Driver  
The rail-to-rail output of the AD823 makes it useful as an A/D  
driver in a single supply system. Because it is a dual op amp, it  
can be used to drive both the analog input of the A/D along with  
its reference input. The high impedance FET input of the  
AD823 is well suited for minimally loading of high output im-  
pedance devices.  
During the testing, it was observed that at 500 kHz, the output  
of the AD823 cannot go below about 350 mV (operating with  
negative supply at ground) without seriously degrading the sec-  
ond harmonic distortion. Another test was performed with a  
200 pull-down resistor to ground that allowed the output to  
go as low as 200 mV without seriously affecting the second har-  
monic distortion. There was, however, a slight increase in the  
third harmonic term with the resistor added, but it was still less  
than the second harmonic.  
REV. 0  
–13–  
AD823  
+3V  
Figure 39 is an FFT plot of the results of driving the AD1672  
with the AD823 with no pull-down resistor. The input ampli-  
tude was 2.15 V p-p and the lower voltage excursion was  
350 mV. The input frequency was 490 kHz, which was chosen  
to spread the location of the harmonics.  
0.1µF  
0.1µF  
95.3k  
95.3k  
8
3
2
CHANNEL 1  
+
1/2  
AD823  
1µF  
MYLAR  
1
47.5k  
500µF  
The distortion analysis is important for systems requiring good  
frequency domain performance. Other systems may require  
good time domain performance. The noise and settling time  
performance of the AD823 will provide the necessary informa-  
tion for its applicability for these systems.  
L
95.3k  
4.99k  
10k  
10k  
HEADPHONES  
32IMPEDANCE  
R
4.99k  
1
6
500µF  
+
V
= 2.15Vp-p  
IN  
1/2  
AD823  
4
47.5k  
1µF  
7
G = +1  
F = 490kHz  
I
CHANNEL 2  
5
MYLAR  
2
Figure 40. 3 Volt Single Supply Stereo Headphone Driver  
4
9
7
6
5
Second Order Low-Pass Filter  
8
3
Figure 41 depicts the AD823 configured as a second order  
Butterworth low-pass filter. With the values as shown, the cor-  
ner frequency will be 200 kHz. The equations for component  
selection are shown below:  
R1 = R2 = user selected (typical values: 10 kto 100 k).  
Figure 39. FFT of AD1672 Output Driven by AD823  
1.414  
0.707  
C1( farads) =  
; C2 =  
2 πfcutoff R1  
2 πfcutoff R1  
3 Volt, Single Supply Stereo Headphone Driver  
The AD823 exhibits good current drive and THD+N perfor-  
mance, even at 3 V single supplies. At 20 kHz, total harmonic  
distortion plus noise (THD+N) equals –62 dB (0.079%) for a  
300 mV p-p output signal. This is comparable to other single  
supply op amps which consume more power and cannot run on  
3 V power supplies.  
+5V  
C2  
56pF  
C3  
0.1µF  
R1  
20k  
R2  
20k  
V
IN  
1/2  
AD823  
C1  
28pF  
V
OUT  
In Figure 40, each channel’s input signal is coupled via a 1 µF  
Mylar capacitor. Resistor dividers set the dc voltage at the non-  
inverting inputs so that the output voltage is midway between  
the power supplies (+1.5 V). The gain is 1.5. Each half of the  
AD823 can then be used to drive a headphone channel. A 5 Hz  
high-pass filter is realized by the 500 µF capacitors and the  
headphones, which can be modeled as 32 ohm load resistors to  
ground. This ensures that all signals in the audio frequency  
range (20 Hz–20 kHz) are delivered to the headphones.  
50pF  
C4  
0.1µF  
–5V  
Figure 41. Second Order Low-Pass Filter  
A plot of the filter is shown below; better than 50 dB of high fre-  
quency rejection is provided.  
–14–  
REV. 0  
AD823  
0
put at node C is then a full-wave rectified version of the input.  
Node B is a buffered half-wave rectified version of the input.  
Input voltage supply to ±18 volts can be rectified, depending on  
the voltage supply used.  
–10  
V
– V  
OUT  
DB  
–20  
–30  
–40  
R1  
100k  
R2  
100kΩ  
+VS  
8
0.01µF  
6
5
A
7
3
2
C
A2  
1
–50  
–60  
VIN  
FULL-WAVE  
RECTIFIED OUTPUT  
A1  
4
1/2  
AD823  
1/2  
AD823  
1k  
10k  
100k  
FREQUENCY – Hz  
10M  
100M  
1M  
B
HALF-WAVE  
RECTIFIED OUTPUT  
Figure 42. Frequency Response of Filter  
Single-Supply Half-Wave and Full-Wave Rectifiers  
An AD823 configured as a unity gain follower and operated  
with a single supply can be used as a simple half-wave rectifier.  
The AD823’s inputs maintain picoamp level input currents even  
when driven well below the minus supply. The rectifier puts that  
behavior to good use, maintaining an input impedance of over  
1011 for input voltages from 1 volt from the positive supply to  
20 volts below the negative supply.  
2V  
2V  
200µs  
100  
90  
A
B
C
10  
The full- and half-wave rectifier shown in Figure 43 operates as  
follows: when VIN is above ground, R1 is bootstrapped through  
the unity gain follower A1 and the loop of amplifier A2. This  
forces the inputs of A2 to be equal, thus no current flows  
through R1 or R2, and the circuit output tracks the input. When  
0%  
2V  
Figure 43. Single Supply Half- and Full-Wave Rectifier  
V
IN is below ground, the output of A1 is forced to ground. The  
noninverting input of amplifier A2 sees the ground level output  
of A1, therefore, A2 operates as a unity gain inverter. The out-  
REV. 0  
–15–  
AD823  
OUTLINE DIMENSIONS  
Dimensions shown in inches and (mm).  
8-Lead Plastic DIP  
(N-8)  
8
5
0.25  
(6.35)  
0.31  
(7.87)  
PIN 1  
1
4
0.30 (7.62)  
REF  
0.39 (9.91) MAX  
0.035±0.01  
(0.89±0.25)  
0.165±0.01  
(4.19±0.25)  
0.011±0.003  
(0.28±0.08)  
0.18±0.03  
(4.57±0.76)  
0.125  
(3.18)  
MIN  
15  
°
0°  
0.10  
(2.54)  
0.018±0.003  
(0.46±0.08)  
0.033  
(0.84)  
NOM  
SEATING  
PLANE  
BSC  
8-Lead Plastic SOIC  
(SO-8)  
8
5
0.1574 (4.00)  
0.1497 (3.80)  
PIN 1  
1
0.2440 (6.20)  
0.2284 (5.80)  
4
0.1968 (5.00)  
0.1890 (4.80)  
0.0196 (0.50)  
0.0099 (0.25)  
x 45°  
0.0688 (1.75)  
0.0532 (1.35)  
0.0098 (0.25)  
0.0040 (0.10)  
8°  
0°  
0.0500 (1.27)  
0.0160 (0.41)  
0.0500  
(1.27)  
BSC  
0.0192 (0.49)  
0.0138 (0.35)  
0.0098 (0.25)  
0.0075 (0.19)  
–16–  
REV. 0  

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