ADG1236YCPZ-500RL7 [ADI]

Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch;
ADG1236YCPZ-500RL7
型号: ADG1236YCPZ-500RL7
厂家: ADI    ADI
描述:

Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch

光电二极管 输出元件
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Low Capacitance, Low Charge Injection,  
15 V/12 V iCMOS, Dual SPDT Switch  
Data Sheet  
ADG1236  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
1.3 pF off capacitance  
3.5 pF on capacitance  
ADG1236  
S1A  
D1  
1 pC charge injection  
33 V supply range  
S1B  
120 Ω on resistance  
Fully specified at +12 V, 15 V  
No VL supply required  
IN1  
IN2  
3 V logic-compatible inputs  
Rail-to-rail operation  
S2A  
D2  
16-lead TSSOP and 12-lead LFCSP packages  
Typical power consumption: <0.03 µW  
S2B  
APPLICATIONS  
SWITCHES SHOWN FOR A LOGIC 1 INPUT  
Automatic test equipment  
Data acquisition systems  
Battery-powered systems  
Sample-and-hold systems  
Audio/video signal routing  
Communication systems  
Figure 1.  
GENERAL DESCRIPTION  
Each switch conducts equally well in both directions when on  
and has an input signal range that extends to the supplies. In the  
off condition, signal levels up to the supplies are blocked. Both  
switches exhibit break-before-make switching action for use in  
multiplexer applications.  
The ADG1236 is a monolithic CMOS device containing two  
independently selectable SPDT switches. It is designed on an  
iCMOS® process. iCMOS (industrial CMOS) is a modular  
manufacturing process combining high voltage complementary  
metal-oxide semiconductor (CMOS) and bipolar technologies.  
It enables the development of a wide range of high performance  
analog ICs capable of 33 V operation in a footprint that no  
previous generation of high voltage devices has been able to  
achieve. Unlike analog ICs using conventional CMOS processes,  
iCMOS components can tolerate high supply voltages while  
providing increased performance, dramatically lower power  
consumption, and reduced package size.  
PRODUCT HIGHLIGHTS  
1. 1.3 pF off capacitance ( 15 V supply).  
2. 1 pC charge injection.  
3. 3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8 V.  
4. No VL logic power supply required.  
5. Ultralow power dissipation: <0.03 µW.  
6. 16-lead TSSOP and 12-lead 3 mm × 3 mm LFCSP packages.  
The ultralow capacitance and charge injection of the device  
make it an ideal solution for data acquisition and sample-and-  
hold applications, where low glitch and fast settling are required.  
Fast switching speed coupled with high signal bandwidth makes  
the device suitable for video signal switching. iCMOS construction  
ensures ultralow power dissipation, making the device ideally  
suited for portable and battery-powered instruments.  
Rev. A  
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Technical Support  
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ADG1236* PRODUCT PAGE QUICK LINKS  
Last Content Update: 11/29/2017  
COMPARABLE PARTS  
View a parametric search of comparable parts.  
REFERENCE MATERIALS  
Product Selection Guide  
Switches and Multiplexers Product Selection Guide  
Technical Articles  
EVALUATION KITS  
Evaluation Board for 16 lead TSSOP Devices in the Switch/  
Mux Portfolio  
CMOS Switches Offer High Performance in Low Power,  
Wideband Applications  
Data-acquisition system uses fault protection  
DOCUMENTATION  
Application Notes  
DESIGN RESOURCES  
ADG1236 Material Declaration  
PCN-PDN Information  
AN-874: Operating the ADG12xx Series of Parts with 5 V  
Supplies and the Impact on Performance  
Data Sheet  
Quality And Reliability  
Symbols and Footprints  
ADG1236: Low Capacitance, Low Charge Injection, ±15 V/  
12 V iCMOS, Dual SPDT Switch Data Sheet  
User Guides  
DISCUSSIONS  
View all ADG1236 EngineerZone Discussions.  
UG-945: Evaluation Board for 16-Lead TSSOP Devices in  
the Switches and Multiplexers Portfolio  
SAMPLE AND BUY  
Visit the product page to see pricing options.  
TOOLS AND SIMULATIONS  
ADG1236 SPICE Macro Model  
TECHNICAL SUPPORT  
Submit a technical question or find your regional support  
number.  
DOCUMENT FEEDBACK  
Submit feedback for this data sheet.  
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ADG1236  
Data Sheet  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
Absolute Maximum Ratings ............................................................6  
ESD Caution...................................................................................6  
Truth Table for Switches...............................................................6  
Pin Configurations and Function Descriptions............................7  
Terminology.......................................................................................8  
Typical Performance Characteristics ..............................................9  
Test Circuits..................................................................................... 12  
Outline Dimensions....................................................................... 14  
Ordering Guide .......................................................................... 14  
Applications....................................................................................... 1  
Functional Block Diagram .............................................................. 1  
General Description......................................................................... 1  
Product Highlights ........................................................................... 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
Dual Supply................................................................................... 3  
Single Supply................................................................................. 5  
REVISION HISTORY  
3/16—Rev. 0 to Rev. A  
Changes to Figure 2 and Figure 3................................................... 7  
Updated Outline Dimensions....................................................... 14  
Changes to Ordering Guide .......................................................... 14  
9/05—Revision 0: Initial Version  
Rev. A | Page 2 of 16  
 
Data Sheet  
ADG1236  
SPECIFICATIONS  
DUAL SUPPLY  
VDD = 15 V 10%, VSS = −15 V 10%, ꢀGD = 0 V, unless otherwise noted.  
Table 1.  
Y Version1  
Parameters  
25°C  
−40°C to +85°C −40°C to +125°C  
Unit  
Test Conditions/Comments1  
ANALOG SWITCH  
Analog Signal Range  
On Resistance (RON)  
VDD to VSS  
V
120  
190  
3.5  
Ω typ  
Ω max  
Ω typ  
VS = 10 V, IS = −1 mA; Figure 20  
VDD = +13.5 V, VSS = −13.5 V  
VS = 10 V, IS = −1 mA  
230  
260  
On Resistance Match Between  
Channels (∆RON)  
6
20  
57  
10  
72  
12  
79  
Ω max  
Ω typ  
Ω max  
On Resistance Flatness (RFLAT(ON)  
)
VS = −5 V, 0 V, +5 V; IS = −1 mA  
LEAKAGE CURRENTS  
VDD = +16.5 V, VSS = −16.5 V  
Source Off Leakage, IS (Off)  
0.02  
nA typ  
VS = 10 V, VS = 10 V; Figure 21  
0.1  
0.02  
0.6  
1
nA max  
nA typ  
Drain Off Leakage, ID (Off)  
VS = 10 V, VS = 10 V; Figure 21  
0.1  
0.02  
0.2  
0.6  
0.6  
1
1
nA max  
nA typ  
nA max  
Channel On Leakage, ID, IS (On)  
VS = VD = 10 V; Figure 22  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current, IINL or IINH  
2.0  
0.8  
V min  
V max  
μA typ  
μA max  
pF typ  
0.005  
2
VIN = VINL or VINH  
0.1  
Digital Input Capacitance, CIN  
DYNAMIC CHARACTERISTICS2  
Transition Time, tTRANS AOFF BON  
125  
150  
70  
90  
25  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
pC typ  
dB typ  
RL = 300 Ω, CL = 35 pF  
VS = 10 V; Figure 23  
RL = 300 Ω, CL = 35 pF  
VS = 10 V; Figure 23  
RL = 300 Ω, CL = 35 pF  
VS1 = VS2 = 10 V; Figure 24  
VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 25  
RL = 50 Ω, CL = 5 pF, f = 1 MHz;  
Figure 26  
200  
115  
10  
Transition Time, tTRANS BOFF AON  
Break-Before-Make Time Delay, tD  
Charge Injection  
Off Isolation  
−1  
80  
Channel-to-Channel Crosstalk  
85  
dB typ  
% typ  
RL = 50 Ω, CL = 5 pF, f = 1 MHz;  
Figure 27  
RL = 10 kΩ, 5 V rms, f = 20 Hz to  
20 kHz  
Total Harmonic Distortion + Noise  
0.15  
−3 dB Bandwidth  
CS (Off)  
1000  
1.3  
MHz typ  
pF typ  
RL = 50 Ω, CL = 5 pF; Figure 28  
f = 1 MHz; VS = 0 V  
1.6  
3.5  
pF max  
pF typ  
f = 1 MHz; VS = 0 V  
f = 1 MHz; VS = 0 V  
CD, CS (On)  
4.3  
pF max  
f = 1 MHz; VS = 0 V  
Rev. A | Page 3 of 16  
 
 
ADG1236  
Data Sheet  
Y Version1  
−40°C to +85°C −40°C to +125°C  
Parameters  
25°C  
0.001  
170  
Unit  
Test Conditions/Comments1  
POWER REQUIREMENTS  
IDD  
VDD = +16.5 V, VSS = −16.5 V  
Digital inputs = 0 V or VDD  
µA typ  
µA max  
µA typ  
µA max  
µA typ  
µA max  
µA typ  
µA max  
1.0  
230  
1.0  
1.0  
IDD  
ISS  
ISS  
Digital inputs = 5 V  
0.001  
0.001  
Digital inputs = 0 V or VDD  
Digital inputs = 5 V  
1 Temperature range for Y version is −40°C to +125°C.  
2 Guaranteed by design; not subject to production test.  
Rev. A | Page 4 of 16  
Data Sheet  
ADG1236  
SINGLE SUPPLY  
VDD = 12 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.  
Table 2.  
Y Version1  
Parameters  
25°C −40°C to +85°C −40°C to +125°C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
On Resistance (RON)  
0 V to VDD  
625  
V
300  
475  
4.5  
Ω typ  
Ω max  
Ω typ  
VS = 0 V to 10 V, IS = −1 mA; Figure 20  
VDD = 10.8 V, VSS = 0 V  
VS = 0 V to 10 V, IS = −1 mA  
567  
26  
On Resistance Match Between  
Channels (∆RON)  
16  
60  
27  
Ω max  
Ω typ  
On Resistance Flatness (RFLAT(ON)  
LEAKAGE CURRENTS  
)
VS = 3 V, 6 V, 9 V, IS = −1 mA  
VDD = 13.2 V  
Source Off Leakage, IS (Off)  
0.02  
0.1  
0.02  
0.1  
0.02  
0.2  
nA typ  
nA max  
nA typ  
nA max  
nA typ  
nA max  
VS = 1 V/10 V, VD = 10 V/1 V; Figure 21  
0.6  
0.6  
0.6  
1
1
1
Drain Off Leakage, ID (Off)  
VS = 1 V/10 V, VD = 10 V/1 V; Figure 21  
VS = VD = 1 V or 10 V, Figure 22  
Channel On Leakage, ID, IS (On)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current, IINL or IINH  
2.0  
0.8  
V min  
V max  
µA typ  
µA max  
pF typ  
0.001  
3
VIN = VINL or VINH  
0.1  
Digital Input Capacitance, CIN  
DYNAMIC CHARACTERISTICS2  
Transition Time, tTRANS BOFF AON  
105  
140  
155  
190  
50  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
pC typ  
dB typ  
dB typ  
RL = 300 Ω, CL = 35 pF  
VS = 8 V; Figure 23  
RL = 300 Ω, CL = 35 pF  
VS = 8 V; Figure 23  
RL = 300 Ω, CL = 35 pF  
VS1 = VS2 = 8 V; Figure 24  
VS = 6 V, RS = 0 Ω, CL = 1 nF; Figure 25  
RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 26;  
RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 27  
175  
255  
10  
Transition Time, tTRANS AOFF BON  
Break-Before-Make Time Delay, tD  
Charge Injection  
Off Isolation  
Channel-to-Channel Crosstalk  
−3 dB Bandwidth  
CS (Off)  
−0.8  
75  
85  
800  
1.6  
1.9  
4
MHz typ RL = 50 Ω, CL = 5 pF; Figure 28  
pF typ  
pF max  
pF typ  
pF max  
f = 1 MHz; VS = 6 V  
f = 1 MHz; VS = 6 V  
f = 1 MHz; VS = 6 V  
f = 1 MHz; VS = 6 V  
VDD = 13.2 V  
CD, CS (On)  
4.9  
POWER REQUIREMENTS  
IDD  
0.001  
170  
µA typ  
µA max  
µA typ  
µA max  
Digital inputs = 0 V or VDD  
1.0  
IDD  
Digital inputs = 5 V  
230  
1 Temperature range for Y version is −40°C to +125°C.  
2 Guaranteed by design; not subject to production test.  
Rev. A | Page 5 of 16  
 
ADG1236  
Data Sheet  
ABSOLUTE MAXIMUM RATINGS  
TA = 25°C, unless otherwise noted.  
Table 3.  
Stresses at or above those listed under Absolute Maximum  
Ratings may cause permanent damage to the product. This is a  
stress rating only; functional operation of the product at these  
or any other conditions above those indicated in the operational  
section of this specification is not implied. Operation beyond  
the maximum operating conditions for extended periods may  
affect product reliability.  
Parameter  
Rating  
VDD to VSS  
35 V  
−0.3 V to +25 V  
+0.3 V to −25 V  
VSS − 0.3 V to VDD + 0.3 V or  
30 mA, whichever occurs first  
VDD to GND  
VSS to GND  
Analog Inputs1  
Digital Inputs1  
GND − 0.3 V to VDD + 0.3 V or  
30 mA, whichever occurs first  
ESD CAUTION  
Peak Current, S or D  
100 mA (pulsed at 1 ms,  
10% duty cycle max)  
Continuous Current per  
Channel, S or D  
25 mA  
Operating Temperature Range  
Automotive (Y Version)  
Storage Temperature Range  
Junction Temperature  
−40°C to +125°C  
−65°C to +150°C  
150°C  
TRUTH TABLE FOR SWITCHES  
Table 4.  
IN  
16-Lead TSSOP, θJA Thermal  
Impedance  
112°C/W  
Switch A  
Off  
On  
Switch B  
On  
Off  
0
1
12-Lead LFCSP, θJA Thermal  
Impedance  
Reflow Soldering Peak  
Temperature, Pb Free  
80°C/W  
260°C  
1 Over voltages at IN, S, or D are clamped by internal diodes. Current must be  
limited to the maximum ratings given.  
Rev. A | Page 6 of 16  
 
 
 
Data Sheet  
ADG1236  
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
IN1  
S1A  
D1  
NC  
NC  
NC  
D1  
1
9
V
DD  
ADG1236  
S1B 2  
8 S2B  
TOP VIEW  
(Not to Scale)  
S1B  
ADG1236  
V
DD  
3
7
D2  
V
SS  
TOP VIEW  
V
S2B  
D2  
(Not to Scale)  
SS  
GND  
NC  
S2A  
IN2  
NOTES  
NC  
1. NC = NO CONNECT. DO NOT CONNECT  
TO THIS PIN.  
2. THE EXPOSED PAD MUST BE TIED  
NC = NO CONNECT. DO NOT CONNECT  
TO THIS PIN.  
TO SUBSTRATE, V  
.
SS  
Figure 2. TSSOP Pin Configuration  
Figure 3. LFCSP Pin Configuration  
Table 5. Pin Function Descriptions  
Pin No.  
LFCSP  
TSSOP  
Mnemonic  
IN1  
Description  
1
2
3
4
5
6
11  
12  
1
2
3
Logic Control Input.  
S1A  
D1  
S1B  
VSS  
GND  
NC  
Source Terminal. Can be an input or output.  
Drain Terminal. Can be an input or output.  
Source Terminal. Can be an input or output.  
Most Negative Power Supply Potential.  
Ground (0 V) Reference.  
4
7, 8, 14 to 16 10  
No Connect.  
9
5
6
7
8
9
IN2  
S2A  
D2  
S2B  
VDD  
Logic Control Input.  
10  
11  
12  
13  
Source Terminal. Can be an input or output.  
Drain Terminal. Can be an input or output.  
Source Terminal. Can be an input or output.  
Most Positive Power Supply Potential.  
Rev. A | Page 7 of 16  
 
ADG1236  
Data Sheet  
TERMINOLOGY  
IDD  
CD (Off)  
The positive supply current.  
The off switch drain capacitance, measured with reference to  
ground.  
ISS  
The negative supply current.  
CD, CS (On)  
VD (VS)  
The on switch capacitance, measured with reference to ground.  
The analog voltage on Terminals D and S.  
CIN  
RON  
The digital input capacitance.  
The ohmic resistance between D and S.  
tTRANS  
RFLAT(ON)  
The delay time between the 50% and 90% points of the digital  
input and switch on condition when switching from one  
address state to another.  
Flatness is defined as the difference between the maximum and  
minimum value of on resistance as measured over the specified  
analog signal range.  
Charge Injection  
IS (Off)  
A measure of the glitch impulse transferred from the digital  
input to the analog output during switching.  
The source leakage current with the switch off.  
ID (Off)  
Off Isolation  
The drain leakage current with the switch off.  
A measure of unwanted signal coupling through an off switch.  
ID, IS (On)  
Crosstalk  
The channel leakage current with the switch on.  
A measure of unwanted signal that is coupled through from one  
channel to another as a result of parasitic capacitance.  
VINL  
The maximum input voltage for Logic 0.  
Bandwidth  
The frequency at which the output is attenuated by 3 dB.  
VINH  
The minimum input voltage for Logic 1.  
On Response  
The frequency response of the on switch.  
I
INL (IINH)  
The input current of the digital input.  
Insertion Loss  
The loss due to the on resistance of the switch.  
CS (Off)  
The off switch source capacitance, measured with reference to  
ground.  
THD + N  
The ratio of the harmonic amplitude plus noise of the signal to  
the fundamental.  
Rev. A | Page 8 of 16  
 
Data Sheet  
ADG1236  
TYPICAL PERFORMANCE CHARACTERISTICS  
250  
200  
V
V
= 15V  
= –15V  
DD  
SS  
T
= 25°C  
A
V
V
= 15V  
DD  
SS  
180  
160  
140  
120  
100  
80  
= –15V  
V
V
= 13.5V  
= –13.5V  
200  
150  
DD  
SS  
T
T
= +125°C  
= +85°C  
A
A
T
= +25°C  
= –40°C  
A
A
V
V
= 16.5V  
= –16.5V  
DD  
SS  
100  
T
60  
50  
0
40  
20  
0
–15  
–10  
–5  
0
5
10  
15  
–18 –15 –12 –9 –6 –3  
0
3
6
9
12 15 18  
TEMPERATURE (°C)  
SOURCE OR DRAIN VOLTAGE (V)  
Figure 4. On Resistance as a Function of VD (VS) for Dual Supply  
Figure 7. On Resistance as a Function of VD (VS) for Different Temperatures,  
Dual Supply  
600  
600  
V
V
= 12V  
= 0V  
DD  
SS  
T
= 25°C  
V
V
= 4.5V  
= –4.5V  
A
DD  
SS  
T
= +125°C  
A
500  
400  
300  
200  
500  
V
V
= 5V  
= –5V  
DD  
SS  
T
= +85°C  
A
400  
300  
T
= +25°C  
A
V
V
= 5.5V  
= –5.5V  
DD  
SS  
T
= –40°C  
A
200  
100  
0
100  
0
0
2
4
6
8
10  
12  
–6  
–4  
–2  
0
2
4
6
TEMPERATURE (°C)  
SOURCE OR DRAIN VOLTAGE (V)  
Figure 5. On Resistance as a Function of VD (VS) for Dual Supply  
Figure 8. On Resistance as a Function of VD (VS) for Different Temperatures,  
Single Supply  
0.20  
450  
V
V
V
= 15V  
= –15V  
DD  
SS  
T
= 25°C  
V
V
= 10.8V  
= 0V  
A
DD  
SS  
400  
350  
300  
250  
200  
150  
100  
0.15  
0.10  
0.05  
0
= +10V/–10V  
BIAS  
V
V
= 12V  
= 0V  
DD  
SS  
I
(OFF)  
S
V
V
= 13.2V  
= 0V  
DD  
SS  
–0.05  
–0.10  
I
, I (ON)  
S
D
–0.15  
–0.20  
50  
0
0
20  
40  
60  
80  
100  
120  
0
2
4
6
8
10  
12  
14  
TEMPERATURE (°C)  
SOURCE OR DRAIN VOLTAGE (V)  
Figure 6. On Resistance as a Function of VD (VS) for Single Supply  
Figure 9. Leakage Currents as a Function of Temperature, Dual Supply  
Rev. A | Page 9 of 16  
 
ADG1236  
Data Sheet  
0.35  
220  
V
V
V
= 12V  
= 0V  
DD  
SS  
0.30  
0.25  
200  
180  
160  
= 1V/10V  
BIAS  
A
B
12V SS  
OFF ON  
A
B
15V DS  
OFF ON  
0.20  
140  
120  
100  
0.15  
0.10  
0.05  
I
, I (ON)  
S
D
B
A
12V SS  
OFF ON  
80  
60  
I
(OFF)  
B
A
15V DS  
S
OFF ON  
0
–0.05  
–0.10  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
–40  
–20  
0
20  
40  
60  
80  
100  
120  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 13. tTRANSITION Times vs. Temperature  
Figure 10. Leakage Currents as a Function of Temperature, Single Supply  
60  
0
–10  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
I
T
PER CHANNEL  
= 25°C  
V
V
T
= 15V  
DD  
DD  
= –15V  
A
SS  
= 25°C  
50  
40  
30  
20  
A
V
V
= 15V  
= –15V  
DD  
SS  
V
V
= 12V  
DD  
10  
0
= 0V  
SS  
–90  
–100  
0
2
4
6
8
10  
12  
14  
10k  
100k  
1M  
10M  
100M  
1G  
LOGIC, IN (V)  
X
FREQUENCY (Hz)  
Figure 14. Off Isolation vs. Frequency  
Figure 11. IDD vs. Logic Level  
6
4
0
–10  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
T
= 25°C  
V
V
T
= 15V  
= –15V  
= 25°C  
A
DD  
SS  
A
2
V
V
= 15V  
= –15V  
0
DD  
SS  
V
V
= 12V  
= 0V  
DD  
SS  
BETWEEN  
SA AND SB  
–2  
–4  
–6  
BETWEEN  
S1 AND S2  
–90  
–100  
–15  
–10  
–5  
0
5
10  
15  
10k  
100k  
1M  
10M  
100M  
1G  
V
(V)  
BIAS  
FREQUENCY (Hz)  
Figure 15. Crosstalk vs. Frequency  
Figure 12. Charge Injection vs. Source Voltage  
Rev. A | Page 10 of 16  
Data Sheet  
ADG1236  
5
4
0
V
V
= 15V  
= –15V  
= 25°C  
DD  
SS  
V
V
= 15V  
= –15V  
= 25°C  
DD  
SS  
T
A
T
A
–5  
SOURCE/DRAIN ON  
–10  
–15  
3
2
SOURCE OFF  
–20  
–25  
–30  
1
0
–15  
–10  
–5  
0
5
10  
15  
10k  
100k  
1M  
10M  
100M  
1G  
10G  
V
(V)  
BIAS  
FREQUENCY (Hz)  
Figure 16. On Response vs. Frequency  
Figure 18. Capacitance vs. Source Voltage for Dual Supply  
5
10.00  
1.00  
LOAD = 10kΩ  
SOURCE/DRAIN ON  
T
= 25°C  
A
4
V
V
= 12V  
= 0V  
DD  
SS  
T
= 25°C  
A
3
2
V
= 5V, V = –5V, V = 3.5Vrms  
SS  
DD  
S
V
= 15V, V = –15V, V = 5Vrms  
SS  
DD  
S
SOURCE OFF  
0.10  
0.01  
1
0
0
2
4
6
8
10  
12  
10  
100  
1k  
FREQUENCY (Hz)  
10k  
100k  
V
(V)  
BIAS  
Figure 17. THD + N vs. Frequency  
Figure 19. Capacitance vs. Source Voltage for Single Supply  
Rev. A | Page 11 of 16  
ADG1236  
Data Sheet  
TEST CIRCUITS  
V
S
D
I
DS  
V
S
Figure 20. Test Circuit 1—On Resistance  
I
(OFF)  
A
I
(OFF)  
A
S
D
S
D
V
V
D
S
Figure 21. Test Circuit 2—Off Resistance  
I
(ON)  
A
D
S
D
NC  
V
D
NC = NO CONNECT  
Figure 22. Test Circuit 3—On Leakage  
V
V
V
DD  
SS  
0.1F  
0.1F  
V
IN  
50%  
50%  
50%  
50%  
V
DD  
SS  
SB  
V
V
IN  
S
D
V
OUT  
SA  
R
300  
C
35pF  
L
L
90%  
90%  
IN  
V
OUT  
V
IN  
GND  
tON  
tOFF  
Figure 23. Test Circuit 4—Switching Times  
V
V
DD  
SS  
0.1F  
0.1F  
V
IN  
V
V
SS  
DD  
SB  
V
S
D
V
OUT  
SA  
80%  
V
R
C
OUT  
L
L
35pF  
300  
IN  
tBBM  
tBBM  
V
IN  
GND  
Figure 24. Test Circuit 5—Break-Before-Make Time Delay  
V
V
V
DD  
SS  
0.1F  
0.1F  
V
(NORMALLY  
IN  
CLOSED SWITCH)  
V
DD  
SS  
ON  
OFF  
SB  
NC  
V
D
V
S
V
(NORMALLY  
IN  
OUT  
SA  
OPEN SWITCH)  
C
L
IN  
1nF  
V
V  
OUT  
OUT  
V
IN  
Q
= C  V  
L
GND  
INJ  
OUT  
Figure 25. Test Circuit 6—Charge Injection  
Rev. A | Page 12 of 16  
 
 
 
 
 
 
 
Data Sheet  
ADG1236  
V
V
V
V
DD  
SS  
DD  
SS  
0.1F  
0.1F  
0.1F  
0.1F  
NETWORK  
ANALYZER  
NETWORK  
ANALYZER  
V
V
V
DD  
V
DD  
SS  
SS  
NC  
50  
SA  
V
OUT  
R
L
SA  
SB  
50  
50  
IN  
V
S
SB  
D
R
D
50  
V
OUT  
V
IN  
R
50  
IN  
L
V
S
GND  
GND  
V
V
OUT  
OFF ISOLATION = 20 log  
V
OUT  
S
CHANNEL-TO-CHANNEL CROSSTALK = 20 log  
V
S
Figure 26. Test Circuit 7—Off Isolation  
Figure 28. Test Circuit 9—Bandwidth  
SS  
V
V
V
V
DD  
DD  
SS  
0.1F  
0.1F  
0.1F  
0.1F  
AUDIO PRECISION  
NETWORK  
ANALYZER  
V
V
V
DD  
V
SS  
DD  
SS  
R
S
NC  
50  
S
SA  
SB  
50  
IN  
IN  
V
S
V
S
V p-p  
D
D
V
OUT  
V
OUT  
V
IN  
R
L
10k  
V
IN  
R
L
50  
GND  
GND  
Figure 29. Test Circuit 10—THD + Noise  
V
WITH SWITCH  
OUT  
INSERTION LOSS = 20 log  
V
WITHOUT SWITCH  
OUT  
Figure 27. Test Circuit 8—Channel-to-Channel Crosstalk  
Rev. A | Page 13 of 16  
 
 
 
ADG1236  
Data Sheet  
OUTLINE DIMENSIONS  
5.10  
5.00  
4.90  
16  
9
8
4.50  
4.40  
4.30  
6.40  
BSC  
1
PIN 1  
1.20  
MAX  
0.15  
0.05  
0.20  
0.09  
0.75  
0.60  
0.45  
8°  
0°  
0.30  
0.19  
0.65  
BSC  
SEATING  
PLANE  
COPLANARITY  
0.10  
COMPLIANT TO JEDEC STANDARDS MO-153AB  
Figure 30. 16-Lead Thin Shrink Small Outline Package [TSSOP]  
(RU-16)  
Dimensions shown in millimeters  
3.10  
3.00 SQ  
2.90  
0.30  
0.23  
0.18  
PIN 1  
INDICATOR  
PIN 1  
INDICATOR  
10  
12  
0.50  
BSC  
1
3
9
7
EXPOSED  
PAD  
1.45  
1.30 SQ  
1.15  
0.25 MIN  
6
4
0.70  
0.60  
0.50  
TOP VIEW  
BOTTOM VIEW  
FOR PROPER CONNECTION OF  
THE EXPOSED PAD, REFER TO  
THE PIN CONFIGURATION AND  
FUNCTION DESCRIPTIONS  
0.80  
0.75  
0.70  
0.05 MAX  
0.02 NOM  
COPLANARITY  
0.08  
SECTION OF THIS DATA SHEET.  
SEATING  
PLANE  
0.20 REF  
COMPLIANT TO JEDEC STANDARDS MO-220-WEED.  
Figure 31. 12-Lead Lead Frame Chip Scale Package [LFCSP]  
3 mm × 3 mm Body and 0.75 mm Package Height  
(CP-12-4)  
Dimensions shown in millimeters  
ORDERING GUIDE  
Model1  
Temperature Range  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
Package Description  
Package Option  
RU-16  
RU-16  
RU-16  
CP-12-4  
CP-12-4  
ADG1236YRUZ  
16-Lead Thin Shrink Small Outline Package [TSSOP]  
16-Lead Thin Shrink Small Outline Package [TSSOP]  
16-Lead Thin Shrink Small Outline Package [TSSOP]  
12-Lead Lead Frame Chip Scale Package [LFCSP]  
12-Lead Lead Frame Chip Scale Package [LFCSP]  
ADG1236YRUZ-REEL  
ADG1236YRUZ-REEL7  
ADG1236YCPZ-500RL7  
ADG1236YCPZ-REEL7  
1 Z = RoHS Compliant Part.  
Rev. A | Page 14 of 16  
 
 
Data Sheet  
NOTES  
ADG1236  
Rev. A | Page 15 of 16  
ADG1236  
NOTES  
Data Sheet  
©2005–2016 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D04776-0-3/16(A)  
Rev. A | Page 16 of 16  

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