ADG749BKS-REEL [ADI]

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, MO-203AB, SC-70, 6 PIN, Multiplexer or Switch;
ADG749BKS-REEL
型号: ADG749BKS-REEL
厂家: ADI    ADI
描述:

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, MO-203AB, SC-70, 6 PIN, Multiplexer or Switch

开关 光电二极管
文件: 总8页 (文件大小:126K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CMOS Low Voltage  
2.5 SPDT Switch In SC70 Package  
a
ADG749  
FUNCTIONAL BLOCK DIAGRAM  
FEATURES  
1.8 V to 5.5 V Single Supply  
5 (Max) On Resistance  
0.75 (Typ) On-Resistance Flatness  
–3 dB Bandwidth >200 MHz  
Rail-to-Rail Operation  
6-Lead SC70 Package  
Fast Switching Times  
tON 20 ns  
ADG749  
S2  
D
S1  
IN  
tOFF 6 ns  
SWITCHES SHOWN FOR  
A LOGIC "1" INPUT  
Typical Power Consumption (<0.01 W)  
TTL/CMOS-Compatible  
APPLICATIONS  
Battery-Powered Systems  
Communication Systems  
Sample Hold Systems  
Audio Signal Routing  
Video Switching  
PRODUCT HIGHLIGHTS  
1. 1.8 V to 5.5 V Single Supply Operation. The ADG749  
offers high performance, including low on resistance and  
fast switching times, and is fully specified and guaranteed  
with 3 V and 5 V supply rails.  
Mechanical Reed Relay Replacement  
GENERAL DESCRIPTION  
2. Very Low RON (5 max at 5 V, 10 max at 3 V). At 1.8 V  
The ADG749 is a monolithic CMOS SPDT switch. This switch  
is designed on a submicron process that provides low power  
dissipation yet gives high switching speed, low on resistance and  
low leakage currents.  
operation, RON is typically 40 over the temperature range.  
3. On-Resistance Flatness (RFLAT(ON)) (0.75 typ).  
4. –3 dB Bandwidth >200 MHz.  
The ADG749 can operate from a single supply range of 1.8 V to  
5.5 V, making it ideal for use in battery-powered instruments and  
with the new generation of DACs and ADCs from Analog Devices.  
5. Low Power Dissipation. CMOS construction ensures low  
power dissipation.  
6. Fast tON/tOFF.  
Each switch of the ADG749 conducts equally well in both  
directions when on. The ADG749 exhibits break-before-make  
switching action.  
7. Tiny 6-lead SC70 package.  
Because of the advanced submicron process, –3 dB bandwidths  
of greater than 200 MHz can be achieved.  
The ADG749 is available in a 6-lead SC70 package.  
REV. 0  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781/329-4700  
Fax: 781/326-8703  
World Wide Web Site: http://www.analog.com  
© Analog Devices, Inc., 2000  
(VDD = 5 V 10%, GND = 0 V. All specifications –40C to +85C, unless otherwise  
noted.)  
B Version  
ADG749–SPECIFICATIONS1  
–40C to  
+85C  
Parameter  
25C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
6
V
On Resistance (RON  
)
2 .5  
5
typ  
max  
VS = 0 V to VDD, IS = –10 mA  
Test Circuit 1  
On Resistance Match Between  
Channels (RON  
)
0.1  
0.8  
typ  
max  
typ  
max  
VS = 0 V to VDD, IS = –10 mA  
VS = 0 V to VDD, IS = –10 mA  
On-Resistance Flatness (RFLAT(ON)  
)
0.75  
1.2  
LEAKAGE CURRENTS2  
Source OFF Leakage IS (OFF)  
VDD = 5.5 V  
VS = 4.5 V/1 V, VD = 1 V/4.5 V  
Test Circuit 2  
VS = VD = 1 V, or VS = VD = 4.5 V  
Test Circuit 3  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
0.35  
0.35  
Channel ON Leakage ID, IS (ON)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.4  
0.8  
V min  
V max  
IINL or IINH  
0.005  
µA typ  
µA max  
VIN = VINL or VINH  
0.1  
DYNAMIC CHARACTERISTICS2  
tON  
14  
3
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
dB typ  
dB typ  
RL = 300 , CL = 35 pF  
VS = 3 V, Test Circuit 4  
RL = 300 , CL = 35 pF  
VS = 3 V, Test Circuit 4  
RL = 300 , CL = 35 pF,  
20  
6
tOFF  
Break-Before-Make Time Delay, tD  
Off Isolation  
8
1
VS1 = VS2 = 3 V, Test Circuit 5  
–67  
–87  
RL = 50 , CL = 5 pF, f = 10 MHz  
RL = 50 , CL = 5 pF, f = 1 MHz,  
Test Circuit 6  
Channel-to-Channel Crosstalk  
–62  
–82  
dB typ  
dB typ  
RL = 50 , CL = 5 pF, f = 10 MHz  
RL = 50 , CL = 5 pF, f = 1 MHz,  
Test Circuit 7  
Bandwidth –3 dB  
CS (OFF)  
200  
7
MHz typ  
pF typ  
RL = 50 , CL = 5 pF, Test Circuit 8  
CD, CS (ON)  
27  
pF typ  
POWER REQUIREMENTS  
VDD = 5.5 V  
Digital Inputs = 0 V or 5 V  
IDD  
0.001  
µA typ  
µA max  
1.0  
NOTES  
1Temperature ranges are as follows: B Version, –40°C to +85°C.  
2Guaranteed by design, not subject to production test.  
Specifications subject to change without notice.  
–2–  
REV. 0  
ADG749  
SPECIFICATIONS1(VDD = 3 V 10%, GND = 0 V. All specifications –40C to +85C, unless otherwise noted.)  
B Version  
–40C to  
+85C  
Parameter  
25C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
V
On Resistance (RON  
)
6
7
10  
typ  
VS = 0 V to VDD, IS = –10 mA,  
Test Circuit 1  
max  
On Resistance Match Between  
Channels (RON  
)
0.1  
0.8  
2.5  
typ  
max  
typ  
VS = 0 V to VDD, IS = –10 mA  
VS = 0 V to VDD, IS = –10 mA  
On-Resistance Flatness (RFLAT(ON)  
)
LEAKAGE CURRENTS2  
VDD = 3.3 V  
Source OFF Leakage IS (OFF)  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
VS = 3 V/1 V, VD = 1 V/3 V,  
Test Circuit 2  
VS = VD = 1 V, or VS = VD = 3 V,  
Test Circuit 3  
0.35  
0.35  
Channel ON Leakage ID, IS (ON)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.0  
0.4  
V min  
V max  
I
INL or IINH  
0.005  
µA typ  
µA max  
VIN = VINL or VINH  
0.1  
DYNAMIC CHARACTERISTICS2  
tON  
16  
4
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
dB typ  
dB typ  
RL = 300 , CL = 35 pF  
VS = 2 V, Test Circuit 4  
RL = 300 , CL = 35 pF  
VS = 2 V, Test Circuit 4  
RL = 300 , CL = 35 pF  
24  
7
tOFF  
Break-Before-Make Time Delay, tD  
Off Isolation  
8
1
VS1 = VS2 = 2 V, Test Circuit 5  
–67  
–87  
RL = 50 , CL = 5 pF, f = 10 MHz  
RL = 50 , CL = 5 pF, f = 1 MHz,  
Test Circuit 6  
Channel-to-Channel Crosstalk  
–62  
–82  
dB typ  
dB typ  
RL = 50 , CL = 5 pF, f = 10 MHz  
RL = 50 , CL = 5 pF, f = 1 MHz,  
Test Circuit 7  
Bandwidth –3 dB  
CS (OFF)  
200  
7
MHz typ  
pF typ  
RL = 50 , CL = 5 pF, Test Circuit 8  
CD, CS (ON)  
27  
pF typ  
POWER REQUIREMENTS  
VDD = 3.3 V  
Digital Inputs = 0 V or 3 V  
IDD  
0.001  
µA typ  
µA max  
1.0  
NOTES  
1Temperature ranges are as follows: B Version, –40°C to +85°C.  
2Guaranteed by design, not subject to production test.  
Specifications subject to change without notice.  
REV. 0  
–3–  
ADG749  
ABSOLUTE MAXIMUM RATINGS1  
TERMINOLOGY  
(TA = 25°C unless otherwise noted)  
VDD  
GND  
S
D
IN  
RON  
RON  
Most Positive Power Supply Potential.  
Ground (0 V) Reference.  
Source Terminal. May be an input or output.  
Drain Terminal. May be an input or output.  
Logic Control Input.  
Ohmic resistance between D and S.  
On resistance match between any two channels  
i.e., RON max – RON min.  
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V  
Analog, Digital Inputs2 . . . . . . . . . . –0.3 V to VDD + 0.3 V or  
30 mA, Whichever Occurs First  
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA  
(Pulsed at 1 ms, 10% Duty Cycle max)  
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA  
Operating Temperature Range  
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C  
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C  
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C  
SC70 Package, Power Dissipation . . . . . . . . . . . . . . . . 315 mW  
RFLAT(ON)  
Flatness is defined as the difference between the  
maximum and minimum value of on resistance as  
measured over the specified analog signal range.  
θ
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W  
θ
JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W  
IS (OFF)  
Source Leakage Current with the switch “OFF.”  
Lead Temperature, Soldering  
ID, IS (ON) Channel Leakage Current with the switch “ON.”  
VD (VS)  
CS (OFF)  
CD (OFF)  
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C  
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C  
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV  
Analog Voltage on Terminals D, S.  
“OFF” Switch Source Capacitance.  
“OFF” Switch Drain Capacitance.  
NOTES  
1Stresses above those listed under Absolute Maximum Ratings may cause perma-  
nent damage to the device. This is a stress rating only; functional operation of the  
device at these or any other conditions above those listed in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability. Only one absolute  
maximum rating may be applied at any one time.  
CD, CS (ON) “ON” Switch Capacitance.  
tON  
tOFF  
tD  
Delay between applying the digital control input  
and the output switching on.  
Delay between applying the digital control input  
and the output switching off.  
“OFF” time or “ON” time measured between the  
90% points of both switches, when switching  
from one address state to another.  
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be  
limited to the maximum ratings given.  
Table I. Truth Table  
Crosstalk  
A measure of unwanted signal that is coupled  
through from one channel to another as a result  
of parasitic capacitance.  
ADG749 IN  
Switch S1  
Switch S2  
0
1
ON  
OFF  
OFF  
ON  
Off Isolation A measure of unwanted signal coupling through  
an “OFF” switch.  
Bandwidth  
The frequency at which the output is attenuated  
by –3 dBs.  
PIN CONFIGURATION  
6-Lead SC70  
On Response The frequency response of the “ON” switch.  
On Loss  
The voltage drop across the “ON” switch seen on  
the On Response vs. Frequency plot as how many  
dBs the signal is away from 0 dB at very low  
frequencies.  
S2  
D
IN  
1
2
3
6
5
4
ADG749  
TOP VIEW  
(Not to Scale)  
V
DD  
GND  
S1  
ORDERING GUIDE  
Model  
Temperature Range  
Package Description  
SC70 (Plastic Surface Mount)  
Package Option  
Branding Information*  
ADG749BKS  
–40°C to +85°C  
KS-6  
SHB  
*Brand = Brand on these packages is limited to three characters due to space constraints.  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection.  
Although the ADG749 features proprietary ESD protection circuitry, permanent damage may  
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD  
precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
–4–  
REV. 0  
Typical Performance Characteristics–  
ADG749  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
10m  
V
= 5V  
DD  
V
= 2.7V  
DD  
T
= 25C  
A
1m  
100ꢁ  
10ꢁ  
1ꢁ  
V
= 4.5V  
DD  
V
= 3.0V  
DD  
V
= 5.0V  
DD  
100n  
10n  
1n  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
100M  
FREQUENCY Hz  
V
OR V – DRAIN OR SOURCE VOLTAGE – V  
S
D
TPC 1. On Resistance as a Function of VD (VS) Single  
Supplies  
TPC 4. Supply Current vs. Input Switching Frequency  
6.0  
30  
V
= 5V, 3V  
DD  
V
= 3V  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
DD  
40  
50  
60  
70  
+85C  
+25C  
40C  
80  
90  
100  
110  
120  
130  
0
100M  
10k  
100k  
1M  
10M  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
FREQUENCY Hz  
V
OR V DRAIN OR SOURCE VOLTAGE V  
S
D
TPC 2. On Resistance as a Function of VD (VS) for  
Different Temperatures VDD = 3 V  
TPC 5. Off Isolation vs. Frequency  
6.0  
30  
40  
V
= 5V, 3V  
DD  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
V
= 5V  
DD  
50  
60  
70  
+85C  
80  
+25C  
40C  
90  
100  
110  
120  
130  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0 4.5  
5.0  
10k  
100k  
1M  
10M  
100M 0  
V
OR V DRAIN OR SOURCE VOLTAGE V  
S
FREQUENCY Hz  
D
TPC 3. On Resistance as a Function of VD (VS) for  
Different Temperatures VDD = 5 V  
TPC 6. Crosstalk vs. Frequency  
REV. 0  
–5–  
ADG749  
0
V
= 5V  
DD  
2  
4  
6  
10k  
100k  
1M  
10M  
100M  
FREQUENCY Hz  
TPC 7. On Response vs. Frequency  
Test Circuits  
I
DS  
V1  
I
(OFF)  
A
I
(OFF)  
A
I
(ON)  
A
S
D
D
S
D
S
D
S
D
V
S
V
V
V
S
V
S
D
D
R
= V1/I  
DS  
ON  
Test Circuit 1. On Resistance  
Test Circuit 2. Off Leakage  
Test Circuit 3. On Leakage  
V
DD  
0.1F  
V
IN  
50%  
50%  
90%  
V
DD  
90%  
S
D
V
OUT  
V
OUT  
IN  
R
L
C
L
V
S
300ꢀ  
35pF  
GND  
tOFF  
tON  
Test Circuit 4. Switching Times  
V
V
DD  
0.1F  
V
IN  
50%  
50%  
50%  
DD  
D
0V  
S1  
V
S1  
D2  
V
OUT  
50%  
S2  
IN  
C
35pF  
R
300ꢀ  
V
OUT  
L2  
L2  
V
S2  
0V  
GND  
tD  
tD  
V
IN  
Test Circuit 5. Break-Before-Make Time Delay, tD  
V
DD  
0.1F  
V
V
V
DD  
DD  
0.1F  
0.1F  
V
DD  
S1  
S2  
V
V
DD  
DD  
OUT  
D
S1  
S1  
S2  
R
50ꢀ  
D
L
D
V
OUT  
V
OUT  
S2  
R
L
R
L
50ꢀ  
50ꢀ  
IN  
V
S
IN  
IN  
GND  
V
V
IN  
IN  
V
V
S
S
GND  
GND  
CHANNEL-TO-CHANNEL  
CROSSTALK = 20 LOG |V /V  
|
S
OUT  
Test Circuit 6. Off Isolation  
Test Circuit 8. Bandwidth  
REV. 0  
Test Circuit 7. Channel-to-Channel  
Crosstalk  
–6–  
ADG749  
APPLICATIONS INFORMATION  
The signal transfer characteristic is dependent on the switch  
channel capacitance, CDS. This capacitance creates a frequency  
zero in the numerator of the transfer function A(s). Because the  
switch on resistance is small, this zero usually occurs at high  
frequencies. The bandwidth is a function of the switch output  
capacitance combined with CDS and the load capacitance. The  
frequency pole corresponding to these capacitances appears in  
the denominator of A(s).  
The ADG749 belongs to Analog Devices’ new family of  
CMOS switches. This series of general purpose switches have  
improved switching times, lower on resistance, higher band-  
widths, low power consumption and low leakage currents.  
ADG749 Supply Voltages  
Functionality of the ADG749 extends from 1.8 V to 5.5 V single  
supply, which makes it ideal for battery powered instruments,  
where important design parameters are power efficiency and  
performance.  
The dominant effect of the output capacitance, CD, causes the  
pole breakpoint frequency to occur first. Therefore, in order to  
maximize bandwidth a switch must have a low input and output  
capacitance and low on resistance. The On Response vs. Fre-  
quency plot for the ADG749 can be seen in TPC 7.  
It is important to note that the supply voltage effects the input  
signal range, the on resistance and the switching times of the  
part. By taking a look at the typical performance characteristics  
and the specifications, the effects of the power supplies can be  
clearly seen.  
Off Isolation  
Off isolation is a measure of the input signal coupled through an  
off switch to the switch output. The capacitance, CDS, couples  
the input signal to the output load, when the switch is off as  
shown in Figure 2.  
For VDD = 1.8 V operation, RON is typically 40 over the tem-  
perature range.  
On Response vs. Frequency  
Figure 1 illustrates the parasitic components that affect the ac  
performance of CMOS switches (the switch is shown surrounded  
by a box). Additional external capacitances will further degrade  
some performance. These capacitances affect feedthrough,  
crosstalk and system bandwidth.  
C
DS  
D
S
V
OUT  
C
D
C
V
LOAD  
IN  
R
LOAD  
C
DS  
Figure 2. Off Isolation Is Affected by External Load Resis-  
tance and Capacitance  
D
S
V
OUT  
R
ON  
C
D
C
V
LOAD  
IN  
The larger the value of CDS, larger values of feedthrough will be  
produced. The typical performance characteristic graph of TPC  
5 illustrates the drop in off isolation as a function of frequency.  
From dc to roughly 200 kHz, the switch shows better than  
95 dB isolation. Up to frequencies of 10 MHz, the off isolation  
remains better than 67 dB. As the frequency increases, more and  
more of the input signal is coupled through to the output. Off  
isolation can be maximized by choosing a switch with the small-  
est CDS as possible. The values of load resistance and capacitance  
affect off isolation also, as they contribute to the coefficients of the  
poles and zeros in the transfer function of the switch when open.  
R
LOAD  
Figure 1. Switch Represented by Equivalent Parasitic  
Components  
The transfer function that describes the equivalent diagram of  
the switch (Figure 1) is of the form (A)s shown below.  
s(RON  
CDS )+1  
A(s) = RT  
s(RT RON CT )+1  
where:  
RT = RLOAD/(RLOAD + RON  
CT = CLOAD + CD + CDS  
)
s(RLOAD CDS  
)
A(s) =  
s(RLOAD )(CLOAD + CD + CDS )+1  
REV. 0  
–7–  
ADG749  
OUTLINE DIMENSIONS  
Dimensions shown in inches and (mm).  
6-Lead Plastic Surface Mount Package (SC70)  
(KS-6)  
0.087 (2.20)  
0.071 (1.80)  
6
5
2
4
3
0.053 (1.35)  
0.045 (1.15)  
0.094 (2.40)  
0.071 (1.80)  
1
PIN 1  
0.026 (0.65) BSC  
0.051 (1.30)  
BSC  
0.039 (1.00)  
0.031 (0.80)  
0.043 (1.10)  
0.031 (0.80)  
8ꢂ  
0ꢂ  
0.012 (0.30)  
0.006 (0.15) PLANE  
0.012 (0.30)  
0.004 (0.10)  
0.004 (0.10)  
0.000 (0.00)  
SEATING  
0.007 (0.18)  
0.004 (0.10)  
–8–  
REV. 0  

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ADG749BKSZ-REEL

CMOS 1.8 V to 5.5 V, 2.5 ohm 2:1 Mux/SPDT Switch in SC70 Package
ADI

ADG749BKSZ-REEL7

CMOS 1.8 V to 5.5 V, 2.5 ohm 2:1 Mux/SPDT Switch in SC70 Package
ADI

ADG751

CMOS, Low Voltage RF/Video, SPST Switch
ADI

ADG751ARM

CMOS, Low Voltage RF/Video, SPST Switch
ADI

ADG751ARM

1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8, MICRO, SOIC-8
ROCHESTER

ADG751ARM-REEL

1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8, MICRO, SOIC-8
ROCHESTER

ADG751ARM-REEL7

1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8, MICRO, SOIC-8
ROCHESTER

ADG751ARMZ

暂无描述
ADI

ADG751ARMZ

1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8, MICRO, SOIC-8
ROCHESTER