ADG820BRT-REEL [ADI]

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN, Multiplexer or Switch;
ADG820BRT-REEL
型号: ADG820BRT-REEL
厂家: ADI    ADI
描述:

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN, Multiplexer or Switch

复用器 开关 光电二极管
文件: 总12页 (文件大小:191K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
0.5 CMOS  
a
1.8 V to 5.5 V 2:1 Mux/SPDT Switches  
ADG819/ADG820  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Low On Resistance 0.8 Max at 125C  
0.25 Max On Resistance Flatness  
1.8 V to 5.5 V Single Supply  
200 mA Current Carrying Capability  
Automotive Temperature Range: –40C to +125C  
Rail-to-Rail Operation  
ADG819/  
ADG820  
S2  
D
S1  
IN  
6-Lead SOT-23 Package, 8-Lead SOIC Package, and  
6-Bump MicroCSP (Micro Chip Scale Package) ADG819  
Fast Switching Times  
SWITCHES SHOWN  
FOR A LOGIC “1” INPUT  
Typical Power Consumption (<0.01 W)  
TTL-/CMOS-Compatible Inputs  
Pin Compatible with the ADG719 (ADG819)  
APPLICATIONS  
Power Routing  
Battery-Powered Systems  
Communication Systems  
Data Acquisition Systems  
Cellular Phones  
Modems  
PCMCIA Cards  
Hard Drives  
Relay Replacement  
GENERAL DESCRIPTION  
PRODUCT HIGHLIGHTS  
The ADG819 and the ADG820 are monolithic, CMOS, SPDT  
(single-pole, double-throw) switches. These switches are designed  
on a submicron process that provides low power dissipation yet  
gives high switching speed, low On resistance, and low leakage  
currents.  
1. Very low ON resistance, 0.5 typical  
2. 1.8 V to 5.5 V single-supply operation  
3. High current carrying capability  
4. Tiny 6-lead SOT-23 package, 8-lead µSOIC package,  
and 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package  
(ADG819 only)  
Low power consumption and an operating supply range of 1.8 V  
to 5.5 V make the ADG819 and ADG820 ideal for battery-pow-  
ered, portable instruments.  
Each switch of the ADG819 and the ADG820 conducts equally  
well in both directions when on. The ADG819 exhibits break-  
before-make switching action, thus preventing momentary shorting  
when switching channels. The ADG820 exhibits make-before-  
break action.  
The ADG819 and the ADG820 are available in a 6-lead SOT-23  
package and an 8-lead µSOIC package. The ADG819 is also  
available in a 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP  
package. This chip occupies only a 1.14 mm × 2.18 mm area,  
making it the ideal candidate for space-constrained applications.  
REV. 0  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, norforanyinfringementsofpatentsorotherrightsofthirdpartiesthat  
may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781/329-4700  
Fax: 781/326-8703  
www.analog.com  
© Analog Devices, Inc., 2002  
ADG819/ADG820–SPECIFICATIONS1  
(VDD = 5 V 10%, GND = 0 V.)  
–40C to –40C to  
Parameter  
25C  
+85C  
+125C2  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
0.8  
V
ON Resistance (RON  
)
0.5  
0.6  
typ  
max  
VS = 0 V to VDD, IS = 100 mA;  
Test Circuit 1  
0.7  
ON Resistance Match Between  
Channels (RON  
)
0.06  
0.08  
0.1  
typ  
max  
typ  
max  
VS = 0 V to VDD, IS = 100 mA  
VS = 0 V to VDD, IS = 100 mA  
0.1  
0.2  
0.12  
0.25  
ON Resistance Flatness (RFLAT(ON)  
)
0.17  
LEAKAGE CURRENTS  
Source OFF Leakage IS (OFF)  
VDD = 5.5 V  
VS = 4.5 V/1 V, VD = 1 V/4.5 V;  
Test Circuit 2  
VS = VD = 1 V, or VS = VD = 4.5 V;  
Test Circuit 3  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
3
3
10  
25  
Channel ON Leakage ID, IS (ON)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.0  
0.8  
V min  
V max  
IINL or IINH  
0.005  
5
µA typ  
µA max  
pF typ  
VIN = VINL or VINH  
0.1  
CIN, Digital Input Capacitance  
DYNAMIC CHARACTERISTICS3  
ADG819  
tON  
35  
45  
10  
16  
5
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
RL = 50 , CL = 35 pF,  
VS = 3 V; Test Circuit 4  
RL = 50 , CL = 35 pF,  
VS = 3 V; Test Circuit 4  
RL = 50 , CL = 35 pF,  
VS1 = VS2 = 3 V; Test Circuit 5  
50  
18  
55  
21  
1
tOFF  
Break-Before-Make Time Delay, tBBM  
ADG820  
tON  
10  
18  
26  
40  
15  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
pC typ  
RL = 50 , CL = 35 pF,  
VS = 3 V; Test Circuit 4  
RL = 50 , CL = 35 pF,  
VS = 3 V; Test Circuit 4  
RL = 50 , CL = 35 pF,  
VS = 0 V; Test Circuit 6  
VS = 2.5 V, RS = 0 Ω, CL = 1 nF;  
Test Circuit 7  
20  
45  
22  
50  
1
tOFF  
Make-Before-Break Time Delay, tMBB  
Charge Injection  
20  
Off Isolation  
–71  
–72  
dB typ  
dB typ  
RL = 50 , CL = 5 pF, f = 100 kHz;  
Test Circuit 8  
Channel-to-Channel Crosstalk  
RL = 50 , CL = 5 pF, f = 100 kHz;  
Test Circuit 10  
Bandwidth –3 dB  
CS (OFF)  
CD, CS (ON)  
17  
80  
300  
MHz typ RL = 50 , CL = 5 pF; Test Circuit 9  
pF typ  
pF typ  
f = 1 MHz  
f = 1 MHz  
POWER REQUIREMENTS  
VDD = 5.5 V  
Digital Inputs = 0 V or 5.5 V  
IDD  
0.001  
µA typ  
µA max  
1.0  
2.0  
NOTES  
1Temperature range is as follows: –40°C to +125°C.  
2ON resistance parameters tested with IS = 10 mA.  
3Guaranteed by design, not subject to production test.  
Specifications subject to change without notice.  
–2–  
REV. 0  
ADG819/ADG820  
SPECIFICATIONS1  
(VDD = 2.7 V to 3.6 V, GND = 0 V.)  
–40C to –40C to  
Parameter  
25C  
+85C  
+125C2  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
1.6  
V
ON Resistance (RON  
)
0.7  
1.4  
typ  
max  
VS = 0 V to VDD, IS = 100 mA;  
Test Circuit 1  
1.5  
ON Resistance Match Between  
Channels (RON  
)
0.06  
0.25  
typ  
max  
typ  
VS = 0 V to VDD, IS = 100 mA  
0.13  
0.13  
ON Resistance Flatness (RFLAT(ON)  
)
VS = 0 V to VDD, IS = 100 mA  
LEAKAGE CURRENTS  
VDD = 3.6 V  
Source OFF Leakage IS (OFF)  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
VS = 3.3 V/1 V, VD = 1 V/3.3 V;  
Test Circuit 2  
VS = VD = 1 V, or VS = VD = 3.3 V;  
Test Circuit 3  
3
3
10  
25  
Channel ON Leakage ID, IS (ON)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.0  
0.8  
V min  
V max  
I
INL or IINH  
0.005  
5
µA typ  
µA max  
pF typ  
VIN = VINL or VINH  
0.1  
CIN, Digital Input Capacitance  
DYNAMIC CHARACTERISTICS3  
ADG819  
tON  
40  
60  
10  
16  
40  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
RL = 50 , CL = 35 pF,  
VS = 1.5 V; Test Circuit 4  
RL = 50 , CL = 35 pF,  
VS = 1.5 V; Test Circuit  
RL = 50 , CL = 35 pF,  
65  
18  
70  
21  
1
tOFF  
Break-Before-Make Time Delay, tBBM  
V
S1 = VS2 = 1.5 V; Test Circuit 5  
ADG820  
tON  
20  
35  
30  
45  
10  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
pC typ  
RL = 50 , CL = 35 pF,  
VS = 1.5 V; Test Circuit 4  
RL = 50 , CL = 35 pF,  
VS = 1.5 V; Test Circuit 4  
RL = 50 , CL = 35 pF,  
VS = 1.5 V; Test Circuit 6  
VS = 1.5 V, RS = 0 ,CL = 1 nF;  
Test Circuit 7  
40  
50  
45  
55  
1
tOFF  
Make-Before-Break Time Delay, tMBB  
Charge Injection  
10  
Off Isolation  
–71  
–72  
dB typ  
dB typ  
RL = 50 , CL = 5 pF, f = 100 kHz;  
Test Circuit 8  
Channel-to-Channel Crosstalk  
RL = 50 , CL = 5 pF, f = 100 kHz;  
Test Circuit 10  
Bandwidth –3 dB  
CS (OFF)  
CD, CS (ON)  
17  
80  
300  
MHz typ RL = 50 , CL = 5 pF; Test Circuit 9  
pF typ  
pF typ  
f = 1 MHz  
f = 1 MHz  
POWER REQUIREMENTS  
V
DD = 3.6 V  
Digital Inputs = 0 V or 3.6 V  
IDD  
0.001  
µA typ  
µA max  
1.0  
2.0  
NOTES  
1Temperature range is as follows: –40°C to +125°C.  
2ON resistance parameters tested with IS = 10 mA.  
3Guaranteed by design, not subject to production test.  
Specifications subject to change without notice.  
–3–  
REV. 0  
ADG819/ADG820  
ABSOLUTE MAXIMUM RATINGS1  
(TA = 25°C, unless otherwise noted.)  
MicroCSP Package  
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . TBD  
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C  
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V  
Analog Inputs2 . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or  
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First  
Digital Inputs2 . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or  
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First  
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA  
. . . . . . . . . . . . . . . . (Pulsed at 1 ms, 10% Duty Cycle Max)  
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . 200 mA  
Operating Temperature Range  
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C  
Automotive . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C  
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C  
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C  
µSOIC Package  
IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . 235°C  
NOTES  
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-  
nent damage to the device. This is a stress rating only; functional operation of the  
device at these or any other conditions above those listed in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability. Only one absolute  
maximum rating may be applied at any one time.  
2 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be  
limited to the maximum ratings given.  
Table I. Truth Table for the ADG819/ADG820  
IN  
Switch S1  
Switch S2  
0
1
ON  
OFF  
OFF  
ON  
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W  
JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W  
SOT-23 Package (4-Layer Board)  
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 119°C/W  
PIN CONFIGURATIONS  
6-Lead SOT-23  
(RT-6)  
8-Lead µSOIC  
2 3 MicroCSP  
(RM-8)  
TOP VIEW  
(BUMPS AT THE BOTTOM)  
NOT TO SCALE  
6
5
4
1
2
3
4
8
7
6
5
1
2
3
S2  
D
IN  
S2  
D
S1  
S2  
1
IN  
6
ADG819/  
ADG819/  
ADG820  
TOP VIEW  
(Not to Scale)  
NC  
V
ADG820  
TOP VIEW  
DD  
V
D
2
DD  
5
IN  
GND  
S1  
GND  
(Not to Scale)  
V
NC  
DD  
S1  
3
GND  
4
NC = NO CONNECT  
ADG819 ONLY  
ORDERING GUIDE  
Temperature Range Brand1  
Package Description  
Model Option  
Package  
ADG819BRM  
ADG819BRT  
ADG819BCB  
ADG820BRM  
ADG820BRT  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +85°C  
–40°C to +125°C  
–40°C to +125°C  
SNB  
SNB  
SNB  
SPB  
SPB  
µSOIC (MicroSmall Outline IC)  
SOT-23 (Plastic Surface-Mount)  
MicroCSP (Micro Chip Scale Package)  
µSOIC (MicroSmall Outline IC)  
SOT-23 (Plastic Surface-Mount)  
RM-8  
RT-62  
CB-62  
RM-8  
RT-62  
NOTES  
1Branding on these packages is limited to three characters due to space constraints.  
2Contact factory for availability.  
–4–  
REV. 0  
ADG819/ADG820  
TERMINOLOGY  
Most Positive Power Supply Potential  
VDD  
GND  
Ground (0 V) Reference  
IDD  
Positive Supply Current  
S
D
IN  
Source Terminal. May be an input or output.  
Drain Terminal. May be an input or output.  
Logic Control Input  
RON  
RON  
RFLAT(ON)  
Ohmic Resistance between D and S  
ON Resistance Match between Any Two Channels, i.e., RON max – RON min  
Flatness is defined as the difference between the maximum and minimum value of ON resistance as  
measured over the specified analog signal range.  
Source Leakage Current with the Switch OFF  
Channel Leakage Current with the Switch ON  
Analog Voltage on Terminals D, S  
IS (OFF)  
ID, IS (ON)  
VD (VS)  
VINL  
Maximum Input Voltage for Logic “0”  
VINH  
Minimum Input Voltage for Logic “1”  
I
INL(IINH  
)
Input Current of the Digital Input  
CS (OFF)  
CD, CS (ON)  
tON  
OFF Switch Source Capacitance  
ON Switch Capacitance  
Delay between applying the digital control input and the output switching ON.  
Delay between applying the digital control input and the output switching OFF.  
tOFF  
tBBM  
OFF time or ON time measured between the 90% points of both switches when switching  
from one address state to another.  
tMBB  
ON time measured between the 80% points of both switches when switching from one  
address state to another.  
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching.  
Crosstalk  
A measure of unwanted signal coupled through from one channel to another as a result of parasitic  
capacitance.  
OFF Isolation  
Bandwidth  
A measure of unwanted signal coupling through an OFF switch.  
Frequency at which the output is attenuated by –3 dB.  
ON Response  
Insertion Loss  
Frequency Response of the ON Switch  
Loss due to the ON Resistance of the Switch  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate  
on the human body and test equipment and can discharge without detection. Although the ADG819/  
ADG820 features proprietary ESD protection circuitry, permanent damage may occur on devices  
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended  
to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
REV. 0  
–5–  
ADG819/ADG820 –Typical Performance Characteristics  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
V
= 3V  
T
= 25C  
DD  
A
V
= 2.7V  
DD  
T
= +125C  
A
T
= +85C  
A
V
= 3V  
DD  
T
= +25C  
A
V
= 3.3V  
DD  
V = 5V  
DD  
V
= 4.5V  
T
= –40C  
DD  
A
V
= 5.5V  
DD  
0
0.5  
1.0  
1.5  
, V – V  
2.0  
2.5  
3.0  
0
1
2
3
, V – V  
4
5
V
V
D
S
D
S
TPC 1. ON Resistance vs. VD (VS)  
TPC 4. ON Resistance vs. VD (VS) for Different Temperatures  
10  
9
8
7
6
5
4
3
2
1
0
1.0  
T
V
= 25C  
V
= 5V  
A
DD  
= 1.8V  
DD  
0.8  
0.6  
0.4  
0.2  
0
T
= +125C  
A
T
A
= +85C  
T
= +25C  
A
T
= –40C  
A
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
1
2
3
4
5
V
, V – V  
V , V – V  
D S  
D
S
TPC 2. ON Resistance vs. VD (VS)  
TPC 5. ON Resistance vs. VD (VS) for Different Temperatures  
50  
40  
10  
8
V
= 3V, 5V  
DD  
V
= 3V  
DD  
tON  
V
= 5V  
DD  
6
30  
20  
10  
0
4
I
, I (ON)  
D
S
2
V
= 3V, 5V  
DD  
tOFF  
0
I (OFF)  
S
–2  
0
20  
40  
60  
80  
100  
120  
–40  
–20  
0
20  
40  
60  
80  
100  
120  
TEMPERATURE – C  
TEMPERATURE – C  
TPC 3. Leakage Currents vs. Temperatures  
TPC 6. tON/tOFF Times vs. Temperature (ADG819)  
–6–  
REV. 0  
ADG819/ADG820  
250  
200  
150  
100  
50  
1
0
V
= 3V, 5V  
T
= 25C  
DD  
A
T
= 25C  
A
–1  
–2  
–3  
–4  
–5  
–6  
V
= 5V  
DD  
V
= 3V  
DD  
0
–50  
–100  
–150  
–200  
0
0.5  
1.0  
1.5  
2.0  
2.5  
– V  
3.0  
3.5  
4.0  
4.5  
5.0  
0.2  
1
10  
30  
V
FREQUENCY – MHz  
S
TPC 7. Charge Injection vs. Source Voltage  
TPC 10. ON Response vs. Frequency  
0
1.8  
1.6  
1.4  
V
= 5V, 3V  
= 25C  
DD  
T
= 25C  
A
T
A
–10  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–90  
RISING  
1.2  
1.0  
0.8  
FALLING  
0.6  
0.4  
0.2  
0
0.1  
1
2
0
1
2
3
4
5
6
FREQUENCY – MHz  
V
– V  
DD  
TPC 8. OFF Isolation vs. Frequency  
TPC 11. Logic Threshold vs. Supply Voltage  
0
–10  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–90  
0.1  
1
2
FREQUENCY – MHz  
TPC 9. Crosstalk vs. Frequency  
REV. 0  
–7–  
ADG819/ADG820  
Test Circuits  
I
DS  
V1  
I
(ON)  
I
(OFF)  
I (OFF)  
D
D
S
S
S
R
D
S
D
D
NC  
V
V
V
V
D
S
D
S
= V1 / I  
NC = NO CONNECT  
ON  
OS  
Test Circuit 1. ON Resistance  
Test Circuit 3. ON Leakage  
Test Circuit 2. OFF Leakage  
V
DD  
0.1F  
V
V
IN  
DD  
50%  
90%  
50%  
90%  
V
OUT  
R
50ꢀ  
C
L
35pF  
L
V
S
IN  
tOFF  
tON  
GND  
Test Circuit 4. Switching Times  
V
DD  
0.1F  
V
DD  
V
50%  
50%  
IN  
0V  
S1  
V
D
S1  
V
OUT  
90%  
0V  
90%  
V
OUT  
R
50ꢀ  
C
L
35pF  
S2  
IN  
L
V
S2  
tBBM  
tBBM  
GND  
V
IN  
Test Circuit 5. Break-Before-Make Time Delay, tBBM (ADG819 Only)  
V
DD  
0.1F  
V
50%  
50%  
80% V  
IN  
0V  
V
DD  
V
V
S1  
S1  
90%  
80% V  
D
R
C
L1  
300ꢀ  
L1  
35pF  
V
D
D
V
S2  
V
S2  
IN  
R
C
L2  
300ꢀ  
L2  
35pF  
tMBB  
V
IN  
GND  
Test Circuit 6. Make-Before-Break Time Delay, tMBB (ADG820 Only)  
–8–  
REV. 0  
ADG819/ADG820  
V
DD  
V
V  
OUT  
OUT  
Q
= C ꢄ ꢅV  
INJ  
L
OUT  
V
DD  
R
SW OFF  
SW OFF  
SW OFF  
SW OFF  
S
V
OUT  
V
IN  
C
1nF  
SW ON  
SW ON  
L
V
IN  
S
V
IN  
GND  
Test Circuit 7. Charge Injection  
V
DD  
0.1F  
V
NETWORK  
ANALYZER  
DD  
S
D
50ꢀ  
IN  
50ꢀ  
V
S
V
OUT  
R
L
50ꢀ  
GND  
V
IN  
V
OUT  
OFF ISOLATION = 20 LOG  
V
S
Test Circuit 8. OFF Isolation  
V
DD  
0.1F  
V
NETWORK  
ANALYZER  
DD  
S
50ꢀ  
IN  
V
S
D
V
OUT  
R
L
50ꢀ  
GND  
V
IN  
V
WITH SWITCH  
OUT  
INSERTION LOSS = 20 LOG  
V
WITHOUT SWITCH  
OUT  
Test Circuit 9. Bandwidth  
V
DD  
0.1F  
NETWORK  
ANALYZER  
V
DD  
S1  
S2  
V
OUT  
R
50ꢀ  
L
D
R
50ꢀ  
50ꢀ  
IN  
V
S
GND  
V
OUT  
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG  
V
S
Test Circuit 10. Channel-to-Channel Crosstalk  
REV. 0  
–9–  
ADG819/ADG820  
OUTLINE DIMENSIONS  
6-Lead Plastic Surface-Mount Package  
(RT-6)  
Dimensions shown in inches and (mm)  
0.1220 (3.10)  
0.1063 (2.70)  
6
1
5
2
4
3
0.0709 (1.80)  
0.0591 (1.50)  
0.1181 (3.00)  
0.0984 (2.50)  
PIN 1  
0.0374 (0.95)  
BSC  
0.0748  
(1.90)  
BSC  
0.0512 (1.30)  
0.0354 (0.90)  
0.0571 (1.45)  
0.0354 (0.90)  
10ꢁ  
0ꢁ  
0.0197 (0.50)  
0.0098 (0.25)  
0.0059 (0.15)  
0.0000 (0.00)  
COPLANARITY  
0.0217 (0.55)  
0.0138 (0.35)  
SEATING  
PLANE  
0.0091 (0.23)  
0.0031 (0.08)  
8-Lead SOIC Package  
(RM-8)  
Dimensions shown in inches and (mm)  
0.1220 (3.10)  
0.1142 (2.90)  
8
5
4
0.1988 (5.05)  
0.1870 (4.75)  
0.1220 (3.10)  
0.1142 (2.90)  
1
PIN 1  
0.0256 (0.65) BSC  
0.1201 (3.05)  
0.1118 (2.84)  
0.1201 (3.05)  
0.1118 (2.84)  
0.0429 (1.09)  
0.0370 (0.94)  
COPLANARITY  
0.0059 (0.15)  
0.0020 (0.05)  
33ꢁ  
27ꢁ  
0.0181 (0.46)  
0.0079 (0.20)  
0.0280 (0.71)  
0.0161 (0.41)  
0.0110 (0.28)  
0.0031 (0.08)  
SEATING  
PLANE  
2 × 3 Array for MicroCSP  
(CB-6)  
Dimensions shown in millimeters and (inches)  
0.67 (0.0264)  
0.57 (0.0224)  
0.47 (0.0185)  
0.44 (0.0173)  
0.36 (0.0142)  
0.28 (0.0110)  
1.34 (0.0528)  
1.14 (0.0449)  
0.94 (0.0370)  
0.32 (0.0126)  
SEATING  
PLANE  
0.32 (0.0126)  
NOM  
0.50 (0.0197)  
BALL PITCH  
2.38 (0.0937)  
2.18 (0.0858)  
1.98 (0.0780)  
PIN 1  
IDENTIFIER  
0.59 (0.0232)  
0.24 (0.0094)  
0.22 (0.0087) COPLANARITY  
0.20 (0.0079)  
0.50 (0.0860)  
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS  
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR  
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN  
–10–  
REV. 0  
–11–  
–12–  

相关型号:

ADG820BRT-REEL7

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN, Multiplexer or Switch
ADI

ADG820BRT-REEL7

1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN
ROCHESTER

ADG820BRTZ-REEL

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN, Multiplexer or Switch
ADI

ADG820BRTZ-REEL7

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN, Multiplexer or Switch
ADI

ADG820BRTZ-REEL7

1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN
ROCHESTER

ADG821

<1 з CMOS 1.8 V to 5.5 V, Dual SPST Switches
ADI

ADG821BRM

<1 з CMOS 1.8 V to 5.5 V, Dual SPST Switches
ADI

ADG821BRM

DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8, MO-187AA, MSOP-8
ROCHESTER

ADG821BRM-REEL

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches
ADI

ADG821BRM-REEL

DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8, MO-187AA, MSOP-8
ROCHESTER

ADG821BRM-REEL7

<1 &Omega;, Low Voltage (1.8 V - 5.5 V) Dual SPST Switches - Normally Open
ADI

ADG821BRMZ

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches
ADI