ADG901SCPZ-EP [ADI]
0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches;
| 型号： | ADG901SCPZ-EP |
| 厂家： | 
ADI |
| 描述： | 0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches 射频 微波 |
| 文件： | 总11页 (文件大小：597K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Wideband, 38 dB Isolation at 1 GHz, CMOS
1.65 V to 2.75 V, SPST Switch
ADG901-EP
Enhanced Product
FEATURES
FUNCTIONAL BLOCK DIAGRAM
ADG901-EP
Wideband switch: −3 dB at 4.5 GHz
Absorptive switch
RF1
RF2
High off isolation: 38 dB at 1 GHz
Low insertion loss: 0.8 dB at 1 GHz
Single 1.65 V to 2.75 V power supply
CMOS/LVTTL control logic
50Ω
50Ω
Tiny 3 mm × 3 mm LFCSP package
Low power consumption (<2.5 µA)
CTRL
ENHANCED PRODUCT FEATURES
Figure 1.
Supports defense and aerospaceapplications (AQEC standard)
Military temperature range: −55°C to +125°C
Controlled manufacturing baseline
1 assembly/test site
PRODUCT HIGHLIGHTS
1. −38 dB Off Isolation at 1 GHz
2. 0.8 dB Insertion Loss at 1 GHz
1 fabrication site
Enhanced product change notification
Qualification data available on request
3. Tiny 8-Lead LFCSP Package
0
T
= 25°C
A
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
APPLICATIONS
Wireless communications
General-purpose radio frequency (RF) switching
Dual-band applications
High speed filter selection
Digital transceiver front-end switch
IF switching
V
= 2.5V
DD
Tuner modules
Antenna diversity switching list
V
= 1.8V
DD
GENERAL DESCRIPTION
The ADG901-EP is a wideband switch that uses a CMOS
process to provide high isolationand low insertionloss to 1 GHz.
The ADG901-EP is an absorptive (matched) switch with 50 Ω
terminated shunt legs. This switch is designed such that the
isolation is high over the dc to 1 GHz frequency range. The
ADG901-EP has on-board CMOScontrol logic, thus eliminating
the need for external controlling circuitry. The control inputs
are both CMOS and LVTTL compatible. The low power consump-
tion of this CMOS device makes it ideally suited to wireless
applications and general-purpose high frequency switching.
10k
100k
1M
10M
100M
1G
10G
FREQUENCY (Hz)
Figure 2. Off Isolation vs. Frequency
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
–1.8
–2.0
–2.2
–2.4
–2.6
–2.8
–3.0
–3.0
Additional application and technical information can be found
in the ADG901 data sheet.
V
T
= 2.5V
= 25°C
DD
A
10k
100k
1M
10M
100M
1G
10G
FREQUENCY (Hz)
Figure 3. Insertion Loss vs. Frequency
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and register ed trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technica l Support
©2016 Analog Devices, Inc. All rights reserved.
www.analog.com
ADG901-EP
Enhanced Product
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications....................................................................................... 1
General Description......................................................................... 1
Functional Block Diagram .............................................................. 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Continous Current Per Channel ................................................ 4
REVISION HISTORY
Absolute Maximum Ratings ............................................................5
Thermal Resistance.......................................................................5
ESD Caution...................................................................................5
Pin Configurations and Function Descriptions............................6
Typical Performance Characteristics ..............................................7
Terminology.......................................................................................9
Test Circuits..................................................................................... 10
Outline Dimensions....................................................................... 11
Ordering Guide .......................................................................... 11
12/2016—Rev. 0 to Rev. A
Change to Product Title................................................................... 1
9/2016—Revision 0: Initial Version
Rev. A | Page 2 of 11
Enhanced Product
SPECIFICATIONS
ADG901-EP
VDD = 1.65 Vto 2.75 V, GND = 0 V, input power = 0 dBm, temperature range = −55°C to +125°C, unless otherwise noted.
Table 1.
Parameter
Symbol Test Conditions/Comments
Min
Typ 1
Max
Unit
AC ELECTRICAL CHARACTERISTICS
−3 dB Frequency2
Insertion Loss
4.5
0.4
GHz
dB
DC to 100 MHz; VDD = 2.5 V 10%, see
Figure 19
S21, S12
0.7
500 MHz; VDD = 2.5 V 10%
1000 MHz; VDD = 2.5 V 10%
100 MHz
500 MHz
1000 MHz
0.6
0.8
61
45
38
28
25
20
23
21
19
4
6.5
3.1
6.0
36
2.5
1
1.25
dB
dB
dB
dB
Isolation—RF1 to RF2
S21, S12
S11, S22
S11, S22
55
40
31
18
dB
Return Loss (On Channel)2
Return Loss (Off Channel)2
DC to 100 MHz
500 MHz
1000 MHz
DC to 100 MHz
dB
dB
dB
dB
15
500 MHz
1000 MHz
dB
dB
ns
ns
On Switching Time2
Off Switching Time2
Rise Time2
tON
50% CTRL to 90% RF, see Figure 16
50% CTRL to 10% RF, see Figure 16
10% to 90% RF, see Figure 17
90% to 10% RF, see Figure 17
900 MHz/901MHz, 4 dBm, see Figure 21 28.5
See Figure 20
6.5
10.5
5.5
tOFF
tRISE
tFA L L
ns
Fall Time2
9.5
ns
dBm
mV p-p
Third-Order Intermodulation Intercept IP3
Video Feedthrough3
INPUT POWER
1 dB Input Compression4
DC ELECTRICAL CHARACTERISTICS
Input High Voltage
P1dB
1000 MHz; see Figure 22
17
dBm
VINH
VINH
VINL
VINL
VDD = 2.25 V to 2.75 V
VDD = 1.65 V to 1.95 V
VDD = 2.25 V to 2.75 V
VDD = 1.65 V to 1.95 V
1.7
V
V
V
V
0.65 VDD
Input Low Voltage
0.7
0.35
VDD
Input Leakage Current
CAPACITANCE2
II
0 ≤ VIN ≤ 2.75 V
0.1
1
µA
RF1/RF2, RF Port On Capacitance
CTRL Input Capacitance
POWER REQUIREMENTS
VDD
CRF on
CCTRL
f = 1 MHz
f = 1 MHz
1.2
2.1
pF
pF
1.65
2.75
2.5
V
µA
Quiescent Power Supply Current
IDD
Digital inputs = 0 V or VDD
0.1
1 Typical values are at VDD = 2.5 V and 25°C, unless otherwise specified.
2 Guaranteed by design, not subject to production test.
3 Video feedthrough is the dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test
setup, measured with 1 ns rise time pulses and 500 MHz bandwidth.
4 For less than 100 MHz, refer to the AN-952 Application Note for more information about power handling.
Rev. A | Page 3 of 11
ADG901-EP
Enhanced Product
CONTINOUS CURRENT PER CHANNEL
Table 2.
Parameter
CONTINUOUS CURRENT PER CHANNEL1
25°C 85°C 105°C 125°C Unit
Test Conditions/Comments
8-lead LFCSP, θJA = 48°C/W, dc bias = 0.5 V
VDD = 2.75 V, VSS = 0 V
70
56
7
7
3.85
3.85
2.8
2.8
mA maximum
mA maximum
VDD = 1.65 V, VSS = 0 V
1 Guaranteed by design, not subject to production test.
Rev. A | Page 4 of 11
Enhanced Product
ADG901-EP
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise specified.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attentionto
PCB thermal design is required.
Table 3.
Parameter
VDD to GND1
Inputs to GND1, 2
Rating
−0.5 V to +4 V
−0.5 V to VDD + 0.3 V
Data3+ 15%
18 dBm
Table 4. Thermal Resistance
Continuous Current
Input Power4
Package Type
θJA
θJC
Unit
CP-8-131
48
1
°C/W
Operating Temperature Range (Industrial)
Storage Temperature Range
Junction Temperature
Lead Temperature, Soldering (10 sec)
IR Reflow, Peak Temperature (<20 sec)
ESD
−55°C to +125°C
−65°C to +150°C
150°C
300°C
235°C
1 Test condition: thermal impedance simulated values are based on
JEDEC 2S2P thermal test board with four thermal vias. See JEDEC JESD51.
ESD CAUTION
1 kV
1 Tested at 125°C.
2 When RF1 and RF2 are in the open position, the input to ground rating is
−0.5 V to VDD − 0.5 V.
3 See Table 2.
4 The switch is tested in both the open and closed positions. In the closed
condition, power is applied to RF1, and RF2 is terminated to a 50 Ω resistor
to GND. In the open condition, power is applied to RF1 and RF2.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. A | Page 5 of 11
ADG901-EP
Enhanced Product
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
V
DD
1
2
3
4
8
7
6
5
RF2
CTRL
GND
RF1
GND
GND
GND
ADG901-EP
TOP VIEW
(Not to Scale)
NOTES
1. THE LFCSP PACKAGE HAS AN EXPOSED
PAD. THE EXPOSED PAD MUST BE TIED
TO THE SUBSTRATE, GND.
Figure 4. 8-Lead LFCSP Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
Mnemonic Description
1
2
VDD
CTRL
Power Supply Input. These devices can be operated from 1.65 V to 2.75 V; decouple VDD to GND.
CMOS or LVTTL Logic Level. CTRL input must not exceed VDD.
Logic 0: RF1 isolated from RF2.
Logic 1: RF1 to RF2.
3, 5, 6, 7
4
8
GND
RF1
RF2
Ground Reference Point for All Circuitry on the Device.
RF1 Port.
RF2 Port.
EPAD
Exposed Pad. The LFCSP package has an exposed pad. The exposed pad must be tied to the substrate, GND.
Table 6. Truth Table
CTRL
Signal Path
0
1
RF1 isolated from RF2
RF1 to RF2
Rev. A | Page 6 of 11
Enhanced Product
ADG901-EP
TYPICAL PERFORMANCE CHARACTERISTICS
0
–0.5
–1.0
–1.5
–2.0
–0.5
–3.0
–0.4
–0.6
–0.8
T
= +25°C
T = –55°C
A
A
V
= 2.5V
DD
V
= 2.25V
DD
–1.0
–1.2
–1.4
–1.6
–1.8
–2.0
–2.2
–2.4
–2.6
–2.8
–3.0
T
= +125°C
T
= +85°C
A
A
V
= 2.75V
DD
T
= 25°C
A
V
= 2.5V
100k
DD
10k
100k
1M
10M
100M
1G
10G
10k
1M
10M
100M
1G
10G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 5. Insertion Loss vs. Frequency over Supplies (S12 and S21)
Figure 8. Insertion Loss vs. Frequency over Temperature (S12 and S21)
–0.40
0
T
= 25°C
–5
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
–75
–80
–85
–90
–95
–100
A
–0.45
–0.50
–0.55
–0.60
–0.65
–0.70
–0.75
–0.80
–0.85
–0.90
–0.95
–1.00
V
= 2.5V
DD
V
= 2.25V
DD
V
= 2.75V
DD
V
= 2.5V
DD
V
= 1.8V
1G
DD
T
= 25°C
A
10k
100k
1M
10M
100M
1G
10G
10k
100k
1M
10M
100M
10G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 6. Insertion Loss vs. Frequency over Supplies (S12 and S21)
(Zoomed Figure 5 Plot)
Figure 9. Off Isolation vs. Frequency over Supplies (S12 and S21)
–0.4
–0.6
–0.8
0
V
= 2.5V
DD
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
V
= 1.95V
V
= 1.8V
–1.0
–1.2
–1.4
–1.6
–1.8
–2.0
–2.2
–2.4
–2.6
–2.8
–3.0
DD
DD
T
= +125°C
A
T
= +85°C
= +25°C
= –55°C
A
A
A
V
= 1.65V
DD
T
T
T
= 25°C
100k
A
10k
1M
10M
100M
1G
10G
10k
100k
1M
10M
100M
1G
10G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 7. Insertion Loss vs. Frequency over Supplies (S12 and S21)
Figure 10. Off Isolation vs. Frequency over Temperature (S12 and S21)
Rev. A | Page 7 of 11
ADG901-EP
Enhanced Product
0
40
35
30
25
20
15
10
5
T
V
= 25°C
A
= 2.5V
DD
–5
–10
–15
–20
–25
–30
–35
OFF SWITCH
V
A
= 2.5V
DD
ON SWITCH
1M
T
= 25°C
0
250
10k
100k
10M
100M
1G
10G
350
450
550
650
750
850
FREQUENCY (Hz)
FREQUENCY (MHz)
Figure 11. Return Loss vs. Frequency (S11)
Figure 14. IP3 vs. Frequency
20
18
16
14
12
10
8
CH1
CH2
6
4
V
A
= 2.5V
DD
2
T
= 25°C
0
0
250
500
750
1000
1250
1500
CH1 = CTRL = 1V/DIV
t
= 2.8ns
RISE
CH2 = RFx = 100mV/DIV
t
= 5.1ns
FALL
FREQUENCY (MHz)
Figure 12. Switch Timing
Figure 15. P1dB vs. Frequency (DC Bias Not Used)
1
CTRL
RFx
2
CH2 pk-pk
2.016mV
CH1 500mV
CH2 1mV
10.0ns
Figure 13. Video Feedthrough
Rev. A | Page 8 of 11
Enhanced Product
TERMINOLOGY
ADG901-EP
VDD
tFALL
Most positive power supply potential.
Fall time. Time for the RF signal to fall from 90% to 10% of the
on level.
IDD
Positive supply current.
Off Isolation
The attenuation between input and output ports of the switch
when the switch control voltage is in the off condition.
GND
Ground (0 V) reference.
Insertion Loss
The attenuation between input and output ports of the switch
when the switch control voltage is in the on condition.
CTRL
Logic control input.
VINL
P1dB
Maximum input voltage for Logic 0.
1 dB compression point. The RF input power level at which the
switch insertion loss increases by 1 dB over its low level value. It
is a measure of how much power the on switch can handle
before the insertion loss increases by 1 dB.
VINH
Minimum input voltage for Logic 1.
IINL (IINH
Input current of the digital input.
)
IP3
Third-order intermodulation intercept. This is a measure of the
power in false tones that occur when closely spaced tones are
passed through a switch, whereby the nonlinearity of the switch
causes these false tones to be generated.
CIN
Digital input capacitance.
tON
Delay between applying the digital control input and the output
switching on.
Return Loss
The amount of reflected power relative to the incident power at
a port. Large return loss indicates good matching. By measuring
return loss the VSWR can be calculated from conversion charts.
voltage standing wave ratio (VSWR) indicates the degree of
matching present at a switch RF port.
tOFF
Delay between applying the digital control input and the output
switching off.
tRISE
Video Feedthrough
Rise time. Time for the RF signal to rise from 10% to 90% of the
on level.
The spurious signals present at the RF ports of the switch when
the control voltage is switched from high to low or low to high
without an RF signal present.
Rev. A | Page 9 of 11
ADG901-EP
Enhanced Product
TEST CIRCUITS
V
DD
V
DD
0.1µF
0.1µF
V
DD
V
V
OUT
ADG901-EPDD
RF1
RF2
50%
50%
V
CTRL
R
L
NC
OSCILLOSCOPE
V
RF1
S
50Ω
RF2
CTRL
10%
90%
V
OUT
50Ω
GND
50Ω
tON
tOFF
CTRL
GND
Figure 16. Switching Timing: tON, tOFF
V
CTRL
V
DD
0.1µF
RF1
Figure 20. Video Feedthrough
V
DD
V
DD
V
OUT
RF2
0.1µF
50%
50%
V
CTRL
R
L
V
S
50Ω
90%
90%
CTRL
RF
SOURCE
10%
10%
V
OUT
V
DD
GND
ADG901-EP
SPECTRUM
ANALYZER
COMBINER
tRISE
tFALL
RF1
RF2
Figure 17. Switch Timing: tRISE, tFAL L
50Ω
50Ω
RF
SOURCE
V
V
DD
CTRL
CTRL
0.1µF
GND
V
V
OUT
R
L
Figure 21. IP3
50Ω
DD
ADG901-EP
V
DD
RF1
50Ω
RF2
0.1µF
V
S
50Ω
50Ω
NETWORK
ANALYZER
CTRL
CTRL
V
DD
GND
ADG901-EP
RF
SOURCE
SPECTRUM
ANALYZER
V
OUT
V
OFF ISOLATION = 20 LOG
RF2
RF1
V
S
V
S
Figure 18. Off Isolation
50Ω
50Ω
V
DD
CTRL
CTRL
0.1µF
GND
V
V
OUT
R
L
Figure 22. P1dB
V
50Ω
DD
ADG901-EP
RF1
50Ω
RF2
V
S
50Ω
50Ω
NETWORK
ANALYZER
CTRL
CTRL
GND
V
OUT
V
INSERTION LOSS = 20 LOG
V
S
Figure 19. Insertion Loss
Rev. A | Page 10 of 11
Enhanced Product
ADG901-EP
OUTLINE DIMENSIONS
1.84
1.74
1.64
3.10
3.00 SQ
2.90
0.50 BSC
8
5
PIN 1 INDEX
EXPOSED
PAD
1.55
1.45
1.35
AREA
0.50
0.40
0.30
4
1
PIN 1
INDICATOR
(R 0.15)
TOP VIEW
SIDE VIEW
BOTTOM VIEW
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
0.80
0.75
0.70
0.05 MAX
0.02 NOM
COPLANARITY
0.08
SECTION OF THIS DATA SHEET.
SEATING
PLANE
0.30
0.25
0.20
0.203 REF
COMPLIANT TO JEDEC STANDARDS MO-229-WEED-4
Figure 23. 8-Lead Lead Frame Chip Scale Package [LFCSP]
3 mm × 3 mm Body and 0.75 mm Package Height
(CP-8-13)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
Temperature Range
−55°C to +125°C
−55°C to +125°C
Package Description
Package Option
Branding
S4K
S4K
ADG901SCPZ-EP
ADG901SCPZ-EP-RL7
8-Lead Lead Frame Chip Scale Package [LFCSP]
8-Lead Lead Frame Chip Scale Package [LFCSP]
CP-8-13
CP-8-13
1 Z = RoHS Compliant Part.
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D14327-0-12/16(A)
Rev. A | Page 11 of 11
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