HMC5805ALS6 [ADI]
High P1dB Output Power: 24.5 dBm;
| 型号： | HMC5805ALS6 |
| 厂家： | 
ADI |
| 描述： | High P1dB Output Power: 24.5 dBm |
| 文件： | 总10页 (文件大小：775K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Typical Applications
Features
The HMC5805ALS6 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
High P1dB Output Power: 24.5 dBm
High Psat Output Power: 27 dBm
Gain: 11.5 dB
Output IP3: 29 dBm
• Telecom Infrastructure
• Fiber Optics
Supply Voltage: +10 V @ 175 mA
16 Lead Ceramic 6x6 mm SMT Package: 36 mm2
Functional Diagram
General Description
The HMC5805ALS6 is a GaAs pHEMT MMIC Dis-
tributed Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 11.5 dB of gain,
29 dBm output IP3 and +24 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC5805ALS6 is ideal for EW,
ECM, Radar and test equipment applications. The
HMC5805ALS6 amplifier I/Os are internally matched
to 50 Ohms and the 6x6 mm SMT package is well
suited for automated assembly techniques.
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 5
12.5
1.0
Max.
Min.
Typ.
5 - 30
11.5
0.75
0.02
11
Max.
Min.
Typ.
30 - 40
11.5
0.75
0.025
11
Max.
Units
GHz
dB
Gain
9
9
Gain Flatness
dB
Gain Variation Over Temperature
Input Return Loss
0.01
17
dB/ °C
dB
Output Return Loss
18
13
9
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
19
25
18
24.5
27
23
dBm
dBm
dBm
dB
27
26
34
29
26
4.5
4
7
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
175
175
175
mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
1
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Gain & Return Loss
20
Gain vs. Temperature
18
16
14
12
10
8
10
0
-10
-20
-30
6
0
5
10
15
20
25
30
35
40
45
50
40
40
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
+25C
+85C
-40C
S21
S11
S22
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-4
-8
-4
-8
-12
-16
-20
-12
-16
-20
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
+25C
+85C
-40C
+25C
+85C
-40C
Noise Figure vs. Temperature
10
P1dB vs. Temperature
30
28
26
24
22
20
18
16
8
6
4
2
0
0
4
8
12
16
20
24
28
32
36
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
+25C
+85C
-40C
+25C
+85C
-40C
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
2
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
P1dB vs. Supply Voltage
30
Psat vs. Temperature
30
28
26
24
22
20
18
16
28
26
24
22
20
18
16
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
+8V
+10V
+11V
+25C
+85C
-40C
Psat vs. Supply Voltage
P1dB vs. Supply Current
30
30
28
26
24
22
20
18
16
28
26
24
22
20
18
16
0
5
10
15
20
25
30
35
40
0
4
8
12
16
20
24
28
32
36
40
FREQUENCY (GHz)
FREQUENCY (GHz)
+8V
+10V
+11V
125 mA
175 mA
Output IP3 vs.
Psat vs. Supply Current
Temperature @ Pout=12 dBm / Tone
40
30
28
26
24
22
20
18
16
36
32
28
24
20
0
5
10
15
20
25
30
35
40
0
4
8
12
16
20
24
28
32
36
40
FREQUENCY (GHz)
+85C
FREQUENCY (GHz)
125 mA
175 mA
+25C
-40C
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Output IP3 vs. Supply Voltage
Output IM3 @ Vdd=+8V
80
@ Pout=12 dBm / Tone
40
70
60
50
40
30
20
10
0
36
32
28
24
20
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
Pout/TONE (dBm)
2GHz
8GHz
14GHz
20GHz
24GHz
28GHz
30GHz
+8V
+10V
+11V
Output IM3 @ Vdd=+10V
80
Output IM3 @ Vdd=+11V
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
Pout/TONE (dBm)
Pout/TONE (dBm)
2 GHz
8 GHz
14 GHz
20 GHz
24 GHz
28 GHz
30 GHz
2 GHz
8 GHz
14 GHz
20 GHz
24 GHz
28 GHz
30 GHz
Reverse Isolation vs. Temperature
Power Compression @ 20GHz
28
230
0
-10
-20
-30
-40
-50
-60
-70
-80
220
210
200
190
180
170
160
24
20
16
12
8
4
0
0
4
8
12 16 20 24 28 32 36 40 44
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
INPUT POWER (dBm)
Pout
Gain
Idd
PAE
+25C
+85C
-40C
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
4
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Gain and Power vs. Supply Voltage
Gain and Power vs. Supply Current
30
25
20
15
10
5
30
25
20
15
10
5
8
9
10
11
125
135
145
155
Idd (mA)
165
175
Vdd (V)
GAIN(dB)
P1dB(dBm)
Psat(dBm)
GAIN(dB)
P1dB(dBm)
Psat(dBm)
Second Harmonics vs. Temperature @
Power Dissipation @ 85C
Pout=14 dBm
3
60
50
40
30
20
10
0
2
1
0
0
3
6
9
12
15
18
INPUT POWER (dBm)
0
4
8
12
16
20
24
FREQUENCY(GHz)
4GHz
20GHz
30GHz
10GHz
+25C
+85C
-40C
Second Harmonics vs. Vdd
Second Harmonics vs. Pout
@ Pout=14 dBm
60
60
50
40
30
20
10
0
50
40
30
20
10
0
0
4
8
12
16
20
24
0
4
8
12
16
20
24
FREQUENCY(GHz)
FREQUENCY(GHz)
+4dBm
+6dBm
+8dBm
+10dBm
+12dBm
+14dBm
+8V
+10V
+11V
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
12V
Vdd (V)
+8
Idd (mA)
175
-3 to 0 Vdc
+10
175
For Vdd = 12V, Vgg2 = 5.5V
Idd >145mA
+11
175
For Vdd between 8.5V to 11V,
Vgg2 = (Vdd - 6.5V) up to 4.5V
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd = 175 mA.
Gate Bias Voltage (Vgg2)
For Vdd < 8.5V,
Vgg2 must remain > 2V
RF Input Power (RFIN)
Channel Temperature
22 dBm
175 °C
Continuous Pdiss (T= 85 °C)
(derate 32.2 mW/°C above 85 °C)
2.89 W
Thermal Resistance
(channel to ground paddle)
31.1 °C/W
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to 150 °C
-40 to 85 °C
Class1B Passed 500V
Outline Drawing
16-Terminal Ceramic Leadless Chip Carrier with Heat Sink [LCC_HS]
Dimensions shown in millimeters.
Table 1. Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL3
Package Option
EP-16-2
Package Marking [1]
H5805A
XXXX
HMC5805ALS6
ALUMINA, WHITE
Gold over Nickel
H5805A
XXXX
HMC5805ALS6TR
ALUMINA, WHITE
Gold over Nickel
MSL3
EP-16-2
[1] 4-Digit lot number XXXX
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
6
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Low frequency termination. Attach bypass
capacitor per application circuit herein.
ACG2
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
1, 2, 14
RF output for amplifier. Connect DC bias (VDD) network
to provide drain current (Idd). See application circuit
herein.
RFOUT & VDD
VGG2
Gate control 2 for amplifier. Attach bypass
capacitors per application circuit herein. For normal
operation +3.5V should be applied to Vgg2.
3
6
9
This pin is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
RFIN
Gate control 1 for amplifier. Attach bypass
capacitors per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
VGG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
10
11
ACG4
ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
These pins and exposed ground paddle must be
connected to RF/DC ground.
5, 7, 13, 15
4, 8, 12, 16
GND
N/C
These pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Application Information
BIASING PROCEDURES:
DC bias must be applied to the drain via an RF choke/inductor connection to the RFOUT/VDD pin. Gate bias must be applied to
VGG1 and VGG2. Capacitive bypassing is recommended for all of the DC bias pins and AC terminations to ground are recom-
mended for ACG1-ACG4, as shown in the Application Circuit.
The recommended bias sequence during power-up is as follows:
1. Set VGG1 to −2.0 V to pinch off the channels of the lower FETs.
2. Set VDD to 10.0 V. Because the lower FETs are pinched off, IDQ remains very low upon application of VDD.
3. Set VGG2 to 3.5 V.
3. Adjust VGG1 to be more positive until a quiescent drain current of 175 mA has been obtained.
4. Apply the RF input signal.
The recommended bias sequence during power-down is as follows:
1. Turn off the RF input signal.
2. Set VGG1 to −2.0 V to pinch off the channels of the lower FETs.
3. Set VGG2 to 0 V.
4. Set VDD to 0 V.
5. Set VGG1 to 0 V.
Power-up and power-down sequences may differ from the ones described, though care must always be taken to
ensure adherence to the values shown in the Absolute Maximum Ratings.
Unless otherwise noted, all measurements and data shown were taken using the typical application circuit as config-
ured on our evaluation board. The bias conditions shown in the specifications section are the operating points recom-
mended to optimize the overall performance. Operation using other bias conditions may provide performance that
differs from what is shown in this data sheet.
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 250 mA
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
8
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Evaluation PCB
J2
OUT
+
+
+
C13
C15
J5
J6
R2
+
+
C16
IN
+
+
J1
List of Materials for Evaluation EV1HMC5805ALS6 [1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Analog Devices upon request.
Item
Description
J1, J2
PCB Mount K Connectors, SRI
DC Pins
J5, J6
C3 - C5
100 pF Capacitors, 0402 Pkg.
0.01 μF Capacitors, 0603 Pkg.
4.7 μF Capacitors, Case A Pkg.
Zero Ohm Resistor, 0402 Pkg.
HMC5805ALS6 Amplifier
128996 Evaluation PCB
C8 - C11
C13, C15, C16 , C18
R2
U1
PCB [2]
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
9
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Theory of Operation
The HMC5805ALS6 is a GaAs, pHEMT, MMIC power amplifier. Its basic architecture is that of a cascode distributed
amplifier which allows for control of DC bias for a drain and two gates. The cascode distributed architecture uses a
fundamental cell consisting of a stack of two field effect transistors (FETs) with the source of the upper FET connected
to the drain of the lower FET. The fundamental cell is then duplicated several times, with a transmission line feed-
ing the RFIN signal to the gates of the lower FETs and a separate transmission line interconnecting the drains of the
upper FETs and routing the amplified signal to the RFOUT/VDD pin. Additional circuit design techniques are used
around each cell to optimize the overall performance for broadband operation. The major benefit of this architecture
is that high performance is maintained across a bandwidth far greater than what a single instance of the fundamen-
tal cell would provide. Additionally, ACG1-ACG4 provide access to internal nodes which, when provided with the
recommended AC terminations to ground, ensure that the overall response remains flat across the widest possible
frequency range. A simplified Schematic of Architecture is shown in below.
Schematic of Architecture
ACG2
ACG1
T-Line
RFOUT/VDD
VGG2
T-Line
RFIN
VGG1
ACG4 ACG3
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
10
Application Support: Phone: 1-800-ANALOG-D
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