HMC797A [ADI]

HMC797A;
HMC797A
型号: HMC797A
厂家: ADI    ADI
描述:

HMC797A

射频 微波
文件: 总16页 (文件大小:819K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Typical Applications  
Features  
The HMC797A is ideal for:  
• Test Instrumentation  
• Military & Space  
High P1dB Output Power: +29 dBm  
High Psat Output Power: +31 dBm  
High Gain: 15 dB  
3
• Fiber Optics  
High Output IP3: 41 dBm  
Supply Voltage: +10 V @ 400 mA  
50 Ohm Matched Input/Output  
Die Size: 2.89 x 1.55 x 0.1 mm  
Functional Diagram  
General Description  
The HMC797A is a GaAs MMIC pHEMT Distributed  
Power Amplifier which operates between DC and 22  
GHz. The amplifier provides 15 dB of gain, +29 dBm  
of output power at 1 dB gain compression, +31 dBm  
of saturated output power, and 23% PAE while requir-  
ing 400 mA from a +10 V supply. With up to +41 dBm  
of output IP3, the HMC797A is ideal for high linear-  
ity applications in military and space as well as test  
equipment where high order modulations are used.  
This versatile PA exhibits a positive gain slope from 2  
to 20 GHz making it ideal for EW, ECM, Radar and test  
equipment applications. The HMC797A amplifier I/Os  
are internally matched to 50 Ohms facilitating integra-  
tion into Multi-Chip-Modules (MCMs). All data is taken  
with the chip connected via two 0.025 mm (1 mil) wire  
bonds of minimal length 0.31 mm (12 mils).  
Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA*  
Parameter  
Frequency Range  
Min.  
Typ.  
DC - 10  
14.5  
0.5  
Max.  
Min.  
Typ.  
10 - 18  
15  
Max.  
Min.  
Typ.  
18 - 22  
16  
Max.  
Units  
GHz  
dB  
Gain  
13  
13.5  
14  
Gain Flatness  
0.7  
0.4  
dB  
Gain Variation Over Temperature  
Input Return Loss  
0.007  
15  
0.008  
16  
0.010  
17  
dB/ °C  
dB  
Output Return Loss  
17  
17  
15  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
27  
29  
27  
29  
26.5  
29  
dBm  
dBm  
31  
31  
31.5  
Output Third Order Intercept (IP3)  
*Measurement taken at Pout/Tone = + 18  
dBm  
42  
41  
40  
dBm  
Noise Figure  
3.5  
400  
10  
3
3.5  
400  
10  
dB  
mA  
V
Supply Current (Idd)  
Supply Voltage (Vdd)  
400  
10  
8
11  
8
11  
8
11  
*Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical, Vgg1 = -0.6V Typical to achieve Idd = 400 mA.  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
For price, delivery, and to place orders: Analog Devices, Inc.,  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
Phone: 781-329-4700 • Order online at www.analog.com  
Application Support: Phone: 1-800-ANALOG-D  
license is granted by implication or otherwise under any patentorpatent rights ofAnalogDevices.
3 - 1  
Trademarks and registered trademarks are the property of their respective owners.  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Broadband Gain & Return Loss  
Low Frequency Gain & Return Loss  
20  
15  
10  
5
20  
15  
10  
5
S21  
0
-5  
S11  
S22  
3
S21  
S11  
S22  
0
-10  
-15  
-20  
-25  
-30  
-35  
-5  
-10  
-15  
-20  
-25  
0.1  
1
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
24  
24  
FREQUENCY (MHz)  
FREQUENCY (GHz)  
Gain vs. Temperature  
18  
Gain vs. Vdd  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
8V  
9V  
10V  
11V  
+25C  
+85C  
-55C  
6
6
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Gain vs. Idd  
18  
Input Return Loss vs. Temperature  
0
+25C  
+85C  
-55C  
16  
14  
12  
10  
8
-5  
-10  
-15  
-20  
-25  
300mA  
350mA  
400mA  
6
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 2  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Input Return Loss vs. Vdd  
Input Return Loss vs. Idd  
0
0
300mA  
8V  
9V  
10V  
11V  
350mA  
400mA  
-5  
-10  
-15  
-20  
-25  
-5  
-10  
3
-15  
-20  
-25  
0
4
8
12  
16  
20  
24  
24  
24  
0
4
8
12  
16  
20  
24  
24  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Output Return Loss vs. Temperature  
Output Return Loss vs. Vdd  
0
0
8V  
9V  
+25C  
+85C  
-55C  
-5  
-10  
-15  
-20  
-25  
-5  
10V  
11V  
-10  
-15  
-20  
-25  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Output Return Loss vs. Idd  
Reverse Isolation vs. Temperature  
0
0
300mA  
350mA  
400mA  
+25C  
+85C  
-55C  
-10  
-20  
-5  
-10  
-15  
-20  
-25  
-30  
-40  
-50  
-60  
-70  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 3  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Noise Figure vs. Temperature  
10  
Noise Figure vs. Idd  
10  
9
9
+25C  
+85C  
-55C  
300mA  
350mA  
400mA  
8
7
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
3
0
2
4
6
8
10 12 14 16 18 20 22 24  
0
2
4
6
8
10 12 14 16 18 20 22 24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Low Frequency P1dB vs. Temperature  
32  
P1dB vs. Temperature  
32  
30  
28  
30  
28  
26  
24  
22  
26  
+25C  
+85C  
-55C  
+25C  
+85C  
-55C  
24  
22  
0
0.3  
0.5  
0.8  
1
1.3  
1.5  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
P1dB vs. Idd  
32  
P1dB vs. Vdd  
32  
30  
28  
26  
24  
22  
30  
28  
26  
24  
22  
8V  
9V  
10V  
11V  
300mA  
350mA  
400mA  
0
4
8
12  
16  
20  
24  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 4  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Low Frequency Psat vs. Temperature  
34  
Psat vs. Temperature  
34  
32  
30  
28  
32  
30  
28  
3
26  
26  
+25C  
+85C  
-55C  
+25C  
+85C  
-55C  
24  
24  
22  
22  
0
0.3  
0.5  
0.8  
1
1.3  
1.5  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Psat vs. Idd  
34  
Psat vs. Vdd  
34  
32  
30  
28  
26  
24  
22  
32  
30  
28  
26  
24  
22  
8V  
9V  
10V  
11V  
300mA  
350mA  
400mA  
0
4
8
12  
16  
20  
24  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Power Compression @ 10 GHz  
Power Compression @ 2 GHz  
35  
527  
507  
487  
467  
447  
427  
407  
387  
460  
449  
438  
427  
416  
405  
394  
383  
35  
30  
30  
Pout  
Gain  
Pout  
Gain  
PAE  
PAE  
25  
25  
20  
15  
10  
5
20  
15  
10  
5
Idd  
Idd  
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
2
4
6
8
10 12 14 16 18 20  
INPUT POWER (dBm)  
INPUT POWER (dBm)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 5  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
PAE @ Psat vs. Frequency  
Power Compression @ 22 GHz  
36  
30  
25  
20  
15  
10  
5
520  
505  
490  
475  
460  
445  
430  
415  
400  
385  
32  
Pout  
28  
Gain  
PAE  
24  
3
20  
16  
12  
8
+25C  
+85C  
-55C  
Idd  
4
0
0
0
4
8
12  
16  
20  
24  
0
2
4
6
8
10 12 14 16 18 20  
FREQUENCY (GHz)  
INPUT POWER (dBm)  
Power Dissipation @ 85 C  
Gain & Power vs. Vdd @ 2 GHz  
35  
5
4.5  
4
30  
25  
20  
15  
10  
3.5  
Gain  
P1dB  
Psat  
2GHz  
4 GHz  
3
2.5  
2
8 GHz  
12 GHz  
16 GHz  
20 GHz  
22 GHz  
0
2
4
6
8
10 12 14 16 18 20 22  
8
9
10  
11  
INPUT POWER (dBm)  
Vdd (V)  
Gain & Power vs. Vdd @ 10 GHz  
35  
Gain & Power vs. Vdd @ 22 GHz  
35  
30  
25  
20  
15  
10  
30  
25  
20  
15  
10  
Gain  
P1dB  
Psat  
Gain  
P1dB  
Psat  
8
9
10  
11  
8
9
10  
11  
Vdd (V)  
Vdd (V)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 6  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Gain & Power vs. Idd @ 10 GHz  
Gain & Power vs. Idd @ 2 GHz  
35  
35  
30  
30  
25  
25  
3
Gain  
P1dB  
Psat  
Gain  
P1dB  
Psat  
20  
20  
15  
15  
10  
10  
300  
320  
340  
360  
Idd (mA)  
380  
400  
300  
320  
340  
360  
Idd (mA)  
380  
400  
Output IP3 vs. Temperature  
@ Pout = +18 dBm / Tone  
Gain & Power vs. Idd @ 22 GHz  
35  
46  
44  
42  
40  
38  
36  
30  
25  
Gain  
P1dB  
Psat  
20  
+25C  
+85C  
-55C  
34  
32  
30  
15  
10  
300  
320  
340  
360  
Idd (mA)  
380  
400  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
Output IP3 vs. Vdd  
Output IP3 vs. Idd  
@ Pout = 18 dBm / Tone  
@ Pout = 18 dBm / Tone  
46  
44  
42  
40  
38  
46  
44  
42  
40  
38  
36  
36  
34  
32  
30  
8V  
9V  
10V  
11V  
300 mA  
350 mA  
400 mA  
34  
32  
30  
0
4
8
12  
16  
20  
24  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 7  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Output IM3 @ Vdd = 9 V  
70  
Output IM3 @ Vdd = 8 V  
70  
60  
50  
60  
50  
3
40  
40  
2GHz  
2GHz  
6GHz  
30  
20  
10  
0
6GHz  
30  
20  
10  
0
10GHz  
14GHz  
18GHz  
22GHz  
10GHz  
14GHz  
18GHz  
22GHz  
10  
12  
14  
16  
18  
18  
16  
20  
20  
20  
22  
22  
24  
10  
12  
14  
16  
18  
20  
22  
Pout/TONE (dBm)  
Pout/TONE (dBm)  
Output IM3 @ Vdd = 11 V  
70  
Output IM3 @ Vdd = 10 V  
70  
60  
50  
60  
50  
40  
40  
2GHz  
6GHz  
10GHz  
14GHz  
18GHz  
22GHz  
2GHz  
6GHz  
10GHz  
14GHz  
18GHz  
22GHz  
30  
20  
10  
0
30  
20  
10  
0
10  
12  
14  
16  
18  
20  
22  
10  
12  
14  
16  
Pout/TONE (dBm)  
Pout/TONE (dBm)  
OIP2 vs. Temperature  
@ Pout = +18 dBm / Tone  
OIP2 vs. Vdd  
@ Pout = +18 dBm / Tone  
60  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
55  
50  
45  
40  
35  
30  
8V  
9V  
25  
20  
15  
10  
10V  
+25C  
+85C  
-55C  
11V  
0
4
8
12  
16  
20  
24  
0
4
8
12  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 8  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
OIP2 vs. Idd  
Second Harmonics vs. Temperature  
@ Pout = +18 dBm / Tone  
@ Pout = + 18dBm  
60  
50  
55  
50  
45  
40  
35  
30  
25  
40  
30  
3
20  
300 mA  
350 mA  
400 mA  
+25C  
+85C  
-55C  
20  
15  
10  
10  
0
0
4
8
12  
16  
20  
24  
24  
24  
0
4
8
12  
16  
20  
24  
FREQUENCY (GHz)  
FREQUENCY(GHz)  
Second Harmonics vs. Vdd  
@ Pout = + 18dBm  
Second Harmonics vs. Idd  
@ Pout = + 18dBm  
50  
50  
40  
30  
40  
30  
20  
10  
0
20  
300mA  
350mA  
400mA  
8V  
9V  
10  
10V  
11V  
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
24  
FREQUENCY(GHz)  
FREQUENCY(GHz)  
Second Harmonics vs. Pout  
50  
Igg1 vs. RF Input Power  
0.1  
0.05  
0
40  
30  
20  
10  
0
-0.05  
+10dBm  
+12dBm  
+14dBm  
+16dBm  
+18dBm  
+20dBm  
-0.1  
-0.15  
-0.2  
2GHz  
6GHz  
10GHz  
14GHz  
18GHz  
22GHz  
0
2
4
6
8
10 12 14 16 18 20  
0
4
8
12  
16  
20  
INPUT POWER (dBm)  
FREQUENCY(GHz)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 9  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Idd vs. Vgg1  
Representative of a Typical Device  
Igg2 vs. RF Input Power  
2.5  
640  
600  
560  
520  
480  
440  
400  
360  
320  
280  
240  
200  
160  
120  
80  
2
2GHz  
6GHz  
10GHz  
14GHz  
1.5  
18GHz  
22GHz  
3
1
0.5  
0
-0.5  
-1  
40  
0
-40  
0
2
4
6
8
10 12 14 16 18 20  
-1.6  
-1.4  
-1.2  
-1  
-0.8  
-0.6  
-0.4  
INPUT POWER (dBm)  
Vgg1 (V)  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 10  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Absolute Maximum Ratings  
Reliability Information  
Drain Bias Voltage (Vdd)  
Gate Bias Voltage (Vgg1)  
Gate Bias Voltage (Vgg2)  
+12 Vdc  
Channel Temperature  
175 °C  
Nominal Junction Temperature  
(T=85 °C, Vdd = 10 V)  
-3 to 0 Vdc  
147.8 °C  
+2.5 V to (Vdd - 5.5 V)  
Thermal Resistance  
(channel to die bottom)  
15.7 °C/W  
Continuous Pdiss (T= 85 °C)  
(derate 63.7 mW/°C above  
85 °C)  
3
5.73 W  
Stresses at or above those listed under Absolute Maxi-  
mum Ratings may cause permanent damage to the prod-  
uct. This is a stress rating only, functional operation of the  
product at these or any other conditions above those indi-  
cated in the operational section of this specification is not  
implied. Operation beyond the maximum operating condi-  
tions for extended periods may affect product reliability.  
RF Input Power (RFIN)  
Output Load VSWR  
+27 dBm  
7:1  
Storage Temperature  
Operating Temperature  
ESD Sensitivity (HBM)  
-65 to 150 °C  
-55 to +85 °C  
Class 1A - Passed 250V  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 11  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Outline Drawing  
3
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.  
Die Packaging Information [1]  
NOTES:  
1. ALL DIMENSIONS ARE IN INCHES [MM]  
2. DIE THICKNESS IS .0031”  
Standard  
Alternate  
3. TYPICAL BOND PAD IS .004” SQUARE  
4. BOND PAD METALIZATION: GOLD  
5. BACKSIDE METALIZATION: GOLD  
6. BACKSIDE METAL IS GROUND  
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS  
8. OVERALL DIE SIZE .002”  
GP-2 (Gel Pack)  
[2]  
[1] Refer to the “Packaging Information” section on our  
website for die packaging dimensions.  
[2] For alternate packaging information contact Analog  
Devices, Inc.  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 12  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Pad Descriptions  
Pad Number  
Function  
Description  
Interface Schematic  
This pad is DC coupled and matched  
to 50 Ohms. Blocking capacitor is required.  
1
RFIN  
3
Gate control 2 for amplifier. Attach bypass  
capacitors per application circuit herein. For nominal  
operation +3.5V should be applied to Vgg2.  
2
VGG2  
Low frequency termination. Attach bypass  
capacitors per application circuit herein.  
4, 7  
ACG2, ACG4  
Low frequency termination. Attach bypass  
capacitors per application circuit herein.  
3
5
ACG1  
RF output for amplifier. Connect DC bias (Vdd) network to  
provide drain current (Idd). See application circuit herein.  
RFOUT & VDD  
Low frequency termination. Attach bypass  
capacitor per application circuit herein.  
6
ACG3  
Gate control 1 for amplifier. Attach bypass  
capacitor per application circuit herein. Please  
follow “MMIC Amplifier Biasing Procedure”  
application note.  
8
VGG1  
GND  
Die Bottom  
Die bottom must be connected to RF/DC ground.  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 13  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Assembly Diagram  
3
Application Circuit  
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network with low resistance.  
NOTE 2: Optional Capacitors to be used if part is to be operated below 200MHz.  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 14  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs  
The die should be attached directly to the ground plane eutectically or with  
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).  
0.102mm (0.004”) Thick GaAs MMIC  
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina  
thin film substrates are recommended for bringing RF to and from the chip  
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be  
used, the die should be raised 0.150mm (6 mils) so that the surface of  
the die is coplanar with the surface of the substrate. One way to accom-  
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)  
thick molybdenum heat spreader (moly-tab) which is then attached to the  
ground plane (Figure 2).  
Wire Bond  
0.076mm  
(0.003”)  
3
RF Ground Plane  
Microstrip substrates should be placed as close to the die as possible in  
order to minimize bond wire length. Typical die-to-substrate spacing is  
0.076mm to 0.152 mm (3 to 6 mils).  
0.127mm (0.005”) Thick Alumina  
Thin Film Substrate  
Figure 1.  
Handling Precautions  
Follow these precautions to avoid permanent damage.  
0.102mm (0.004”) Thick GaAs MMIC  
Storage: All bare die are placed in either Waffle or Gel based ESD protec-  
tive containers, and then sealed in an ESD protective bag for shipment.  
Once the sealed ESD protective bag has been opened, all die should be  
stored in a dry nitrogen environment.  
Wire Bond  
0.076mm  
(0.003”)  
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to  
clean the chip using liquid cleaning systems.  
RF Ground Plane  
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.  
0.150mm (0.005”) Thick  
Moly Tab  
Transients: Suppress instrument and bias supply transients while bias is  
applied. Use shielded signal and bias cables to minimize inductive pick-up.  
0.254mm (0.010”) Thick Alumina  
Thin Film Substrate  
General Handling: Handle the chip along the edges with a vacuum collet  
or with a sharp pair of bent tweezers. The surface of the chip may have  
Figure 2.  
fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.  
Mounting  
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.  
The mounting surface should be clean and flat.  
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool  
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO  
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of  
scrubbing should be required for attachment.  
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed  
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.  
Wire Bonding  
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force  
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds  
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a  
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable  
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 15  
Application Support: Phone: 1-800-ANALOG-D  
HMC797A  
v01.0417  
GaAs PHEMT MMIC  
1 WATT POWER AMPLIFIER, DC - 22 GHz  
Notes:  
3
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
3 - 16  
Application Support: Phone: 1-800-ANALOG-D  

相关型号:

HMC797APM5E

HMC797APM5E
ADI

HMC797LP5E

GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz
HITTITE

HMC798ALC4

24 GHz to 34 GHz, GaAs, MMIC, Subharmonic SMT Mixer
ADI

HMC798ALC4TR

24 GHz to 34 GHz, GaAs, MMIC, Subharmonic SMT Mixer
ADI

HMC798ALC4TR-R5

24 GHz to 34 GHz, GaAs, MMIC, Subharmonic SMT Mixer
ADI

HMC798LC4

GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz
HITTITE

HMC798LC4TR

Double Balanced Mixer
HITTITE

HMC798LC4_10

GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz
HITTITE

HMC798LC4_1007

GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz
HITTITE

HMC7992LP3DE

Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz
ADI

HMC7992LP3DETR

Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz
ADI

HMC799LP3E

DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HITTITE