HMC8038LP4CE [ADI]

High Isolation, Silicon SPDT, Nonreflective Switch, 0.1 GHz to 6.0 GHz;
HMC8038LP4CE
型号: HMC8038LP4CE
厂家: ADI    ADI
描述:

High Isolation, Silicon SPDT, Nonreflective Switch, 0.1 GHz to 6.0 GHz

光电二极管
文件: 总11页 (文件大小:407K)
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High Isolation, Silicon SPDT,  
Nonreflective Switch, 0.1 GHz to 6.0 GHz  
Data Sheet  
HMC8038  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Nonreflective, 50 Ω design  
High isolation: 60 dB typical  
Low insertion loss: 0.8 dB typical  
High power handling  
34 dBm through path  
29 dBm terminated path  
HMC8038  
V
1
2
RF2  
12  
DD  
50Ω  
V
11 GND  
CTL  
50Ω  
High linearity  
10  
9
RFC 3  
GND  
RF1  
0.1 dB compression (P0.1dB): 35 dBm typical  
Input third-order intercept (IP3): 60 dBm typical  
ESD ratings  
4 kV human body model (HBM), Class 3A  
1.25 kV charged device model (CDM)  
Single positive supply  
4
NC  
PACKAGE  
BASE  
Figure 1.  
3.3 V to 5 V  
1.8 V-compatible control  
All off state control  
16-lead, 4 mm × 4 mm LFCSP (16 mm2)  
Pin compatible with the HMC849ALP4CE  
APPLICATIONS  
Cellular/4G infrastructure  
Wireless infrastructure  
Automotive telematics  
Mobile radios  
Test equipment  
GENERAL DESCRIPTION  
The HMC8038 is a high isolation, nonreflective, 0.1 GHz to  
6.0 GHz, silicon, single-pole, double-throw (SPDT) switch in a  
leadless, surface-mount package. The switch is ideal for cellular  
infrastructure applications, yielding up to 62 dB of isolation up to  
4.0 GHz, a low 0.8 dB of insertion loss up to 4.0 GHz, and 60 dBm  
of input third-order intercept. Power handling is excellent up to  
6.0 GHz, and it offers an input power for an 0.1 dB compression  
point (P0.1dB) of 35 dBm (VDD = 5 V). On-chip circuitry operates  
a single, positive supply voltage from 3.3 V to 5 V, as well as a  
single, positive voltage control from 0 V to 1.8 V/3.3 V/5.0 V at  
very low dc currents. An enable input (EN) set to logic high  
places the switch in an all off state, in which RFC is reflective.  
The HMC8038 has ESD protection on all device pins, including  
the RF interface, and can stand 4 kV HMB and 1.25 kV CDM.  
The HMC8038 offers very fast switching and RF settling times of  
150 ns and 170 ns, respectively. The device comes in a RoHS-  
compliant, compact 4 mm × 4 mm LFCSP.  
Rev. A  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Technical Support  
©2015 Analog Devices, Inc. All rights reserved.  
www.analog.com  
 
 
 
 
HMC8038  
Data Sheet  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
Interface Schematics .....................................................................6  
Typical Performance Characteristics ..............................................7  
Insertion Loss, Isolation, and Return Loss ................................7  
Input Compression and Input Third-Order Intercept .............8  
Theory of Operation .........................................................................9  
Applications Information .............................................................. 10  
Outline Dimensions....................................................................... 11  
Ordering Guide .......................................................................... 11  
Applications....................................................................................... 1  
Functional Block Diagram .............................................................. 1  
General Description......................................................................... 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
Absolute Maximum Ratings............................................................ 5  
ESD Caution.................................................................................. 5  
Pin Configuration and Function Descriptions............................. 6  
REVISION HISTORY  
11/15—Rev. 0 to Rev. A  
Changes to Table 1 ............................................................................ 3  
9/15—Revision 0: Initial Version  
Rev. A | Page 2 of 11  
 
Data Sheet  
HMC8038  
SPECIFICATIONS  
VDD = 3.3 V to 5 V, VCTL = 0 V/VDD, TA = 25°C, 50 Ω system, unless otherwise noted.  
Table 1.  
Parameter  
Test Conditions/Comments  
0.1 GHz to 2.0 GHz  
2.0 GHz to 4.0 GHz  
4.0 GHz to 6.0 GHz  
0.1 GHz to 2.0 GHz  
2.0 GHz to 4.0 GHz  
4.0 GHz to 6.0 GHz  
Min  
Typ  
0.7  
0.8  
0.9  
70  
Max  
1.0  
1.1  
Unit  
dB  
dB  
INSERTION LOSS  
1.3  
dB  
ISOLATION  
RFC to RF1/RF2 (Worst Case)  
55  
50  
40  
dB  
dB  
dB  
60  
51  
RETURN LOSS  
On State  
0.1 GHz to 2.0 GHz  
2.0 GHz to 4.0 GHz  
4.0 GHz to 6.0 GHz  
0.1 GHz to 2.0 GHz  
2.0 GHz to 4.0 GHz  
4.0 GHz to 6.0 GHz  
24  
18  
18  
23  
22  
16  
dB  
dB  
dB  
dB  
dB  
dB  
Off State  
SWITCHING SPEED  
tRISE, tFALL  
tON, tOFF  
10%/90% RFOUT  
50% VCTL to 10%/90% RFOUT  
50% VCTL to 0.1 dB margin of final RFOUT  
60  
150  
170  
ns  
ns  
ns  
RF SETTLING TIME  
INPUT POWER  
1 dB Compression (P1dB)  
VDD = 3.3 V  
VDD = 5 V  
VDD = 3.3 V  
VDD = 5 V  
34  
36  
33  
35  
60  
dB  
dB  
dB  
dB  
0.1 dB Compression (P0.1dB)  
INPUT THIRD-ORDER INTERCEPT (IP3)  
RECOMMENDED OPERATING CONDITIONS  
Bias Voltage Range (VDD)  
Control Voltage Range (VCTL, EN)  
Maximum RF Input Power1  
TCASE = 105°C  
Two-tone input power = 14 dBm/tone  
dBm  
3.0  
0
5.4  
VDD  
V
V
Through Path (5 V/3.3 V)  
Terminated Path  
Hot Switching  
Through Path (5 V/3.3 V)  
Terminated Path  
Hot Switching  
Through Path (5 V/3.3 V)  
Terminated Path  
Hot Switching  
Through Path (5 V/3.3 V)  
Terminated Path  
Hot Switching  
31/30  
24  
24  
34/33  
27  
27  
34/33  
29  
27  
34/33  
29  
27  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
°C  
TCASE = 85°C  
TCASE = 25°C  
TCASE = −40°C  
Case Temperature Range (TCASE  
)
−40  
+105  
1 Exposure to levels between the recommended operating conditions and the absolute maximum rating conditions for extended periods may affect device reliability.  
Rev. A | Page 3 of 11  
 
 
HMC8038  
Data Sheet  
Table 2. Digital Control Voltages  
State  
VDD = 3.3 V ( 5% VDD, TCASE = −40°C to +105°C)  
VDD = 5 V ( 5% VDD, TCASE = −40°C to +105°C)  
Input Control Voltage  
Low (VIL)  
High (VIH)  
0 V to 0.85 V at <1 µA, typical  
1.15 V to 3.3 V at <1 µA, typical  
0 V to 1.20 V at <1 µA, typical  
1.55 V to 5.0 V at <1 µA, typical  
Table 3. Bias Voltage vs. Supply Current  
Parameter  
SUPPLY CURRENT  
VDD = 3.3 V  
Symbol  
Min  
Typ  
Max  
Unit  
Typical IDD (mA)  
IDD  
0.14  
0.16  
mA  
mA  
0.14  
0.16  
VDD = 5 V  
Rev. A | Page 4 of 11  
 
Data Sheet  
HMC8038  
ABSOLUTE MAXIMUM RATINGS  
Table 4.  
During the through mode of operation, the supply voltage scales  
the maximum allowed input power. The power handling vs.  
frequency for the 3.3 V and 5 V supplies is shown in Figure 2.  
40  
Parameter  
Rating  
Bias Voltage Range (VDD)  
Control Voltage Range (VCTL, EN)  
RF Input Power1 (see Figure 2)  
Through Path  
−0.3 V to +5.5 V  
−0.5 V to VDD + (+0.5 V)  
35 dBm  
35  
30  
25  
Terminated Path  
Hot Switching  
Channel Temperature  
Storage Temperature Range  
Thermal Resistance (Channel to Package  
Bottom)  
Through Path  
Terminated Path  
ESD Sensitivity  
HBM  
30 dBm  
30 dBm  
135°C  
−65°C to +150°C  
110°C/W  
100°C/W  
AMR  
OPERATING 5V  
OPERATING 3.3V  
4 kV (Class 3A)  
1.25 kV  
20  
0
1
2
3
4
5
6
CDM  
FREQUENCY (GHz)  
1 For recommended operating conditions, see Table 1.  
Figure 2. Through Path, Power Handling vs. Frequency  
Stresses at or above those listed under Absolute Maximum  
Ratings may cause permanent damage to the product. This is a  
stress rating only; functional operation of the product at these  
or any other conditions above those indicated in the operational  
section of this specification is not implied. Operation beyond  
the maximum operating conditions for extended periods may  
affect product reliability.  
ESD CAUTION  
Rev. A | Page 5 of 11  
 
 
 
HMC8038  
Data Sheet  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
V
1
2
3
4
12 RF2  
11 GND  
DD  
HMC8038  
TOP VIEW  
(Not to Scale)  
V
CTL  
10  
9
RFC  
NC  
GND  
RF1  
NOTES  
1. NC = NO CONNECT. THE PINS ARE NOT CONNECTED  
INTERNALLY; HOWEVER, ALL DATA SHOWN HEREIN WAS  
MEASURED WITH THESE PINS CONNECTED TO RF/DC  
GROUND EXTERNALLY.  
2. EXPOSED PAD. EXPOSED PAD MUST BE CONNECTED TO  
RF/DC GROUND.  
Figure 3. Pin Configuration  
Table 5. Pin Function Descriptions  
Pin No.  
Mnemonic Description  
1
2
VDD  
VCTL  
Supply Voltage Pin.  
Control Input Pin. See Figure 5 for the VCTL interface schematic. Refer to Table 6 and the recommended input  
control voltage range in Table 2.  
3
RFC  
NC  
RF Common Port. This pin is dc-coupled and matched to 50 Ω. A dc blocking capacitor is required on this pin.  
Not Internally Connected. These pins are not internally connected; however, all data shown in this data sheet is  
measured with the NC pins externally connected to RF/dc ground on the evaluation board.  
4, 6 to 8,  
13 to 16  
5
EN  
Enable Input Pin. See Figure 5 for the EN interface schematic. Refer to Table 6 and the recommended input  
control voltage range in Table 2.  
9
RF1  
RF Port 1. This pin is dc-coupled and matched to 50 Ω. A dc blocking capacitor is required on this pin.  
10, 11  
GND  
Ground. The package bottom has an exposed metal pad that must connect to the printed circuit board (PCB)  
RF ground. See Figure 4 for the GND interface schematic.  
12  
RF2  
EPAD  
RF Port 2. This pin is dc-coupled and matched to 50 Ω. A dc blocking capacitor is required on this pin.  
Exposed Pad. Exposed pad must be connected to RF/dc ground.  
INTERFACE SCHEMATICS  
Table 6. Truth Table  
GND  
Control Input  
Signal Path State  
RFC to RF1 RFC to RF2  
VCTL State  
Low  
EN State  
Low  
Figure 4. GND Interface Schematic  
Off  
On  
Off  
Off  
On  
Off  
Off  
Off  
V
High  
Low  
High  
Low  
High  
High  
DD  
V
, EN  
CTL  
Figure 5. Logic Control Interface Schematic  
Rev. A | Page 6 of 11  
 
 
 
 
 
Data Sheet  
HMC8038  
TYPICAL PERFORMANCE CHARACTERISTICS  
INSERTION LOSS, ISOLATION, AND RETURN LOSS  
0
0
–0.5  
–1.0  
–1.5  
–2.0  
–2.5  
–0.5  
–1.0  
–1.5  
+105°C  
+85°C  
+25°C  
–40°C  
+105°C  
+85°C  
+25°C  
–40°C  
–2.0  
–2.5  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 9. Insertion Loss vs. Frequency over Temperatures, VDD = 3.3 V  
Figure 6. Insertion Loss vs. Frequency over Temperatures, VDD = 5 V  
0
0
RFC TO RF1 ON  
RFC TO RF2 ON  
RF1  
RF2  
ALL OFF  
–10  
–20  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–40  
–60  
–80  
–100  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 10. Isolation Between RF1 and RF2 vs. Frequency at VDD = 3.3 V to 5 V  
Figure 7. Isolation Between RFC and RF1/RF2 vs. Frequency at VDD = 3.3 V to 5 V  
0
–5  
–10  
–15  
–20  
–25  
–30  
RFC  
RF1, RF2 OFF  
RF1, RF2 ON  
–35  
–40  
0
1
2
3
4
5
6
7
FREQUENCY (GHz)  
Figure 8. Return Loss vs. Frequency at VDD = 3.3 V to 5 V  
Rev. A | Page 7 of 11  
 
 
HMC8038  
Data Sheet  
INPUT COMPRESSION AND INPUT THIRD-ORDER INTERCEPT  
40  
40  
38  
36  
34  
32  
30  
28  
26  
38  
36  
34  
32  
30  
28  
26  
+105°C  
+85°C  
+25°C  
–40°C  
+105°C  
+85°C  
+25°C  
–40°C  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 11. Input Compression 1 dB Point vs. Frequency over Temperature,  
VDD = 5 V  
Figure 14. Input Compression 0.1 dB Point vs. Frequency over Temperature,  
VDD = 5 V  
40  
38  
36  
34  
32  
40  
+105°C  
+85°C  
+25°C  
–40°C  
38  
36  
34  
32  
30  
28  
26  
30  
28  
26  
+105°C  
+85°C  
+25°C  
–40°C  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 12. Input Compression 1 dB Point vs. Frequency over Temperature,  
VDD = 3.3 V  
Figure 15. Input Compression 0.1 dB Point vs. Frequency over Temperature,  
VDD = 3.3 V  
65  
60  
55  
65  
60  
55  
50  
45  
50  
45  
+105°C  
+85°C  
+25°C  
–40°C  
+105°C  
+85°C  
+25°C  
–40°C  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 13. Input Third-Order Intercept (IP3) Point vs. Frequency, VDD = 5 V  
Figure 16. Input Third-Order Intercept (IP3) Point vs. Frequency, VDD = 3.3 V  
Rev. A | Page 8 of 11  
 
Data Sheet  
HMC8038  
THEORY OF OPERATION  
The HMC8038 requires a single-supply voltage applied to the  
With the EN pin is logic low, the HMC8038 has two operation  
modes: on and off. Depending on the logic level applied to the  
V
DD pin. Bypassing capacitors are recommended on the supply  
line to minimize RF coupling.  
VCTL pin, one RF output port (for example, RF1) is set to on  
mode, by which an insertion loss path is provided from the  
input to the output, as the other RF output port (for example,  
RF2) is set to off mode, by which the output is isolated from the  
input. When the RF output port (RF1 or RF2) is in isolation  
mode, internally terminate it to 50 Ω, and the port absorbs the  
applied RF signal.  
The HMC8038 is controlled via two digital control voltages  
applied to the VCTL pin and the EN pin. A small bypassing  
capacitor is recommended on these digital signal lines to  
improve the RF signal isolation.  
The HMC8038 is internally matched to 50 Ω at the RF input  
port (RFC) and the RF output ports (RF1 and RF2); therefore,  
no external matching components are required. The RFx pins  
are dc-coupled, and dc blocking capacitors are required on the  
RF lines. The design is bidirectional; the input and outputs are  
interchangeable.  
When the EN pin is logic high, the EN pin sets the HMC8038  
switch to off mode. In off mode, both output ports are isolated  
from the input, and the RFC port is open reflective.  
The ideal power-up sequence is as follows:  
1. Power up GND.  
2. Power up VDD  
.
3. Power up the digital control inputs. The relative order of  
the logic control inputs are not important. Powering the digital  
control inputs before the VDD supply can inadvertently  
forward bias and damage ESD protection structures.  
4. Power up the RF input.  
Table 7. Switch Operation Mode  
Digital Control Inputs  
Switch Mode  
RFC to RF2  
VEN VCTL  
RFC to RF1  
0
0
1
0
Off mode. The RF1 port is isolated from the RFC port and  
is internally terminated to a 50 Ω load to absorb the  
applied RF signals.  
On mode. A low insertion loss path from the RFC  
port to the RF2 port.  
1
On mode. A low insertion loss path from the RFC port to  
the RF1 port.  
Off mode. The RF2 port is isolated from the RFC port  
and is internally terminated to a 50 Ω load to absorb  
the applied RF signals.  
X1  
All in off mode. Both the RF1 and RF2 ports are isolated from the RFC port, and the RFC port is reflective.  
1 X stands for don’t care.  
Rev. A | Page 9 of 11  
 
HMC8038  
Data Sheet  
APPLICATIONS INFORMATION  
Generate the evaluation PCB used in the application shown in  
Figure 17 with proper RF circuit design techniques. Signal lines  
at the RF port must have a 50 Ω impedance, and the package  
ground leads and backside ground slug must connect directly to  
the ground plane, as shown in Figure 18. The evaluation board  
shown in Figure 18 is available from Analog Devices, Inc. upon  
request.  
Table 8. Bill of Materials for Evaluation Board  
EV1HMC8038LP4C1  
Reference Designator  
Description  
J1 to J3  
C1 to C6  
C7  
R1, R2  
U1  
PCB2  
PCB mount SMA connector  
100 pF capacitor, 0402 package  
0.1 μF capacitor, 0402 package  
0 Ω resistor, 0402 package  
HMC8038 SPDT switch  
600-01267-00 evaluation PCB  
1 Reference to this evaluation board number when ordering the complete  
evaluation board.  
2 Circuit board material: Roger 4350 or Arlon 25FR.  
V
DD  
C7  
C4  
C3  
0.1µF  
100pF  
1
2
3
4
12  
11  
10  
9
RF2  
50  
50Ω  
100pF  
V
CTL  
GND  
GND  
RF1  
C5  
100pF  
C1  
C2  
100pF  
RFC  
100pF  
PACKAGE  
BASE  
C6  
100pF  
EN  
Figure 17. HMC8038 Application Circuit  
Figure 18. EV1HMC8038LP4C Evaluation Board  
Rev. A | Page 10 of 11  
 
 
 
Data Sheet  
HMC8038  
OUTLINE DIMENSIONS  
4.10  
4.00 SQ  
3.90  
0.39  
0.33  
0.27  
PIN 1  
INDICATOR  
(0.30)  
PIN 1  
INDICATOR  
13  
16  
0.65  
BSC  
1
12  
2.55  
2.40 SQ  
2.25  
EXPOSED  
PAD  
9
4
8
5
0.70  
0.60  
0.50  
0.20 MIN  
TOP VIEW  
BOTTOM VIEW  
1.95 REF  
1.00  
0.90  
0.80  
FOR PROPER CONNECTION OF  
THE EXPOSED PAD, REFER TO  
THE PIN CONFIGURATION AND  
FUNCTION DESCRIPTIONS  
0.05 MAX  
0.02 NOM  
COPLANARITY  
0.08  
SECTION OF THIS DATA SHEET.  
SEATING  
PLANE  
0.20 REF  
COMPLIANT TO JEDEC STANDARDS MO-220-VGGC  
Figure 19. 16-Lead Lead Frame Chip Scale Package [LFCSP]  
4 mm × 4 mm Body and 0.90 mm Package Height  
(CP-16-40)  
Dimensions shown in millimeters  
ORDERING GUIDE  
Model1  
Temperature Range MSL Rating2 Package Description  
Package Option Branding3  
HMC8038LP4CE  
−40°C to +105°C  
MSL3  
16-lead Lead Frame Chip Scale Package [LFCSP] CP-16-40  
8038  
XXXX  
8038  
HMC8038LP4CETR −40°C to +105°C  
EV1HMC8038LP4C −40°C to +105°C  
MSL3  
16-lead Lead Frame Chip Scale Package [LFCSP] CP-16-40  
Evaluation Board  
XXXX  
1 RoHs-Compliant Part.  
2 The maximum peak reflow temperature is 260°C.  
3 4-digit lot number: XXXX.  
©2015 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D13554-0-11/15(A)  
Rev. A | Page 11 of 11  
 
 

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