OP262TRZ-EP-R7 [ADI]
15 MHz Rail-to-Rail Operational Dual Op Amp;
| 型号： | OP262TRZ-EP-R7 |
| 厂家： | 
ADI |
| 描述： | 15 MHz Rail-to-Rail Operational Dual Op Amp 放大器 光电二极管 |
| 文件： | 总12页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
15 MHz, Rail-to-Rail,
Dual Operational Amplifier
OP262-EP
PIN CONFIGURATION
FEATURES
Supports defense and aerospace applications
(AQEC standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
OUT A
–IN A
+IN A
V–
1
2
3
4
8
7
6
5
V+
OP262-EP
TOP VIEW
(Not to Scale)
OUT B
–IN B
+IN B
Figure 1. 8-Lead Narrow-Body SOIC (R Suffix)
One fabrication site
Enhanced product change notification
Qualification data available on request
Wide bandwidth: 15 MHz
Low offset voltage: 325 μV maximum
Low noise: 9.5 nV/√Hz @ 1 kHz
Single-supply operation: 2.7 V to 12 V
Low supply current: 850 ꢀA maximum
Rail-to-rail output swing
GENERAL DESCRIPTION
The OP262-EP is a low power, precision op amp that features a
rail-to-rail output and a 15 MHz bandwidth. With its low offset
voltage of 45 μV (typical) and low noise, it is well suited for
precision filter and control applications.
This product operates from a single supply as low as 2.7 V or
from dual supplies up to 6 V. The OP262-EP is specified over
the military temperature range (−55°C to +125°C) and is available
in an 8-lead SOIC_N package.
Low TCVOS: 1 μV/°C typical
High slew rate: 13 V/μs
No phase inversion
Additional applications information is available in the
OP162/OP262/OP462 data sheet.
Unity-gain stable
APPLICATIONS
Portable instrumentation
Sampling ADC amplifiers
Precision filters
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
www.analog.com
©2010 Analog Devices, Inc. All rights reserved.
OP262-EP
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................6
ESD Caution...................................................................................6
Typical Performance Characteristics ..............................................7
Outline Dimensions....................................................................... 11
Ordering Guide .......................................................................... 11
Applications....................................................................................... 1
Pin Configuration............................................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics............................................................. 3
REVISION HISTORY
7/10—Revision 0: Initial Version
Rev. 0 | Page 2 of 12
OP262-EP
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
45
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
IB
325
1
μV
mV
nA
nA
nA
nA
V
−55°C ≤ TA ≤ +125°C
−55°C ≤ TA ≤ +125°C
−55°C ≤ TA ≤ +125°C
Input Bias Current
360
2.5
600
650
25
40
4
Input Offset Current
IOS
Input Voltage Range
VCM
0
Common-Mode Rejection
Large Signal Voltage Gain
CMRR
AVO
0 V ≤ VCM ≤ 4.0 V, −55°C ≤ TA ≤ +125°C
RL = 2 kΩ, 0.5 ≤ VOUT ≤ 4.5 V
RL = 10 kΩ, 0.5 ≤ VOUT ≤ 4.5 V
70
110
30
88
dB
V/mV
V/mV
V/mV
μV/°C
pA/°C
65
40
RL = 10 kΩ, −55°C ≤ TA ≤ +125°C
Offset Voltage Drift1
Bias Current Drift
ΔVOS/ΔT
ΔIB/ΔT
1
250
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
VOL
IL = 250 μA, −55°C ≤ TA ≤ +125°C
IL = 5 mA
IL = 250 μA, −55°C ≤TA ≤ +125°C
IL = 5 mA
4.95
4.85
4.99
4.94
14
65
80
V
V
mV
mV
mA
mA
Output Voltage Swing Low
50
150
Short-Circuit Current
Maximum Output Current
POWER SUPPLY
ISC
IOUT
Short to ground
30
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7 V to 7 V
−55°C ≤ TA ≤ +125°C
VOUT = 2.5 V
120
500
dB
dB
μA
μA
90
Supply Current/Amplifier
700
850
−55°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Gain Bandwidth Product
Phase Margin
SR
tS
GBP
φm
1 V < VOUT < 4 V, RL = 10 kΩ
To 0.1%, AV = −1, VO = 2 V step
10
540
15
V/μs
ns
MHz
Degrees
61
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
0.5
9.5
0.4
μV p-p
nV/√Hz
pA/√Hz
1 Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta.
Rev. 0 | Page 3 of 12
OP262-EP
VS = 3.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
50
325
1
600
25
2
μV
mV
nA
nA
V
dB
V/mV
V/mV
−55°C ≤ TA ≤ +125°C
Input Bias Current
IB
IOS
VCM
CMRR
AVO
360
2.5
Input Offset Current
Input Voltage Range
Common-Mode Rejection
Large Signal Voltage Gain
0
70
0 V ≤ VCM ≤ 2.0 V, −55°C ≤ TA ≤ +125°C
RL = 2 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V
RL = 10 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V
110
20
30
20
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
VOL
IL = 250 μA
IL= 5 mA
IL = 250 μA
IL= 5 mA
2.95
2.85
2.99
2.93
14
V
V
mV
mV
Output Voltage Swing Low
50
150
66
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7 V to 7 V
−55°C ≤ TA ≤ +125°C
VOUT = 1.5 V
110
500
dB
dB
μA
μA
60
Supply Current/Amplifier
650
850
−55°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Gain Bandwidth Product
Phase Margin
SR
tS
GBP
φm
RL = 10 kΩ
To 0.1%, AV = −1, VO = 2 V step
10
575
15
V/μs
ns
MHz
Degrees
59
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
0.5
9.5
0.4
μV p-p
nV/√Hz
pA/√Hz
Rev. 0 | Page 4 of 12
OP262-EP
VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
25
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
IB
325
1
500
650
25
μV
mV
nA
nA
nA
nA
−55°C ≤ TA ≤ +125°C
−55°C ≤ TA ≤ +125°C
−55°C ≤ TA ≤ +125°C
Input Bias Current
260
2.5
Input Offset Current
IOS
40
Input Voltage Range
Common-Mode Rejection
Large Signal Voltage Gain
VCM
CMRR
AVO
−5
70
+4
V
dB
−4.9 V ≤ VCM ≤ +4.0 V, −55°C ≤ TA ≤ +125°C
RL = 2 kΩ, –4.5 V ≤ VOUT ≤ +4.5 V
RL = 10 kΩ, –4.5 V ≤ VOUT ≤ +4.5 V
−55°C ≤ TA ≤ +125°C
110
35
120
V/mV
V/mV
V/mV
μV
μV/°C
pA/°C
75
25
Long-Term Offset Voltage1
Offset Voltage Drift2
Bias Current Drift
VOS
ΔVOS/ΔT
ΔIB/ΔT
600
1
250
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
VOL
IL = 250 μA, −55°C ≤ TA ≤ +125°C
IL= 5 mA
IL = 250 μA, −55°C ≤ TA ≤ +125°C
IL= 5 mA
4.95
4.85
4.99
4.94
−4.99 −4.95
V
V
V
V
Output Voltage Swing Low
−4.94 −4.85
Short-Circuit Current
Maximum Output Current
ISC
IOUT
Short to ground
80
30
mA
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = 1.35 V to 6 V
−55°C ≤ TA ≤ +125°C
VOUT = 0 V
−55°C ≤ TA ≤ +125°C
VOUT = 0 V
110
dB
dB
μA
mA
μA
mA
V
60
Supply Current/Amplifier
650
550
800
1.15
775
1
−55°C ≤ TA ≤ +125°C
Supply Voltage Range
VS
3.0 ( 1.5ꢀ
12 ( 6ꢀ
DYNAMIC PERFORMANCE
Slew Rate
SR
tS
GBP
φm
−4 V < VOUT < +4 V, RL = 10 kΩ
To 0.1%, AV = −1, VO = 2 V step
13
V/μs
ns
MHz
Degrees
Settling Time
Gain Bandwidth Product
Phase Margin
475
15
64
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
0.5
9.5
0.4
μV p-p
nV/√Hz
pA/√Hz
1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
2 Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta.
Rev. 0 | Page 5 of 12
OP262-EP
ABSOLUTE MAXIMUM RATINGS
Table 4.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Parameter
Min
6 V
6 V
Supply Voltage
Input Voltage1
Differential Input Voltage2
Internal Power Dissipation
SOIC (Sꢀ
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
0.6 V
Observe Derating Curves
Observe Derating Curves
−65°C to +150°C
−55°C to +125°C
−65°C to +150°C
Table 5.
Package Type
1
Unit
θJA
θJC
8-Lead SOIC (Rꢀ
157
56
°C/W
Lead Temperature Range,
(Soldering, 10 secꢀ
300°C
1 θ is specified for the worst-case conditions, that is, θ is specified for a
JA
JA
device soldered in circuit board for SOIC package.
1 For supply voltages greater than 6 V, the input voltage is limited to less than
or equal to the supply voltage.
2 For differential input voltages greater than 0.6 V, the input current should be
limited to less than 5 mA to prevent degradation or destruction of the input
devices.
ESD CAUTION
Rev. 0 | Page 6 of 12
OP262-EP
TYPICAL PERFORMANCE CHARACTERISTICS
250
125
100
75
V
= 5V
S
V
= 5V
S
T
= 25°C
A
200
150
100
COUNT =
720 OP AMPS
50
50
0
25
0
–200
–140
–80
–20
40
100
160
–75
–50
–25
0
25
50
75
100
125
150
150
150
INPUT OFFSET VOLTAGE (µV)
TEMPERATURE (°C)
Figure 2. Input Offset Voltage Distribution
Figure 5. Input Offset Voltage vs. Temperature
100
80
60
40
20
0
0
–100
–200
–300
–400
–500
V
= 5V
S
V
= 5V
S
T
= 25°C
A
COUNT =
360 OP AMPS
0.2
0.3
0.5
0.7
0.9
1.1
OS
1.3
1.5
–75
–50
–25
0
25
50
75
100
125
INPUT OFFSET DRIFT, TCV (µV,°C)
TEMPERATURE (°C)
Figure 6. Input Bias Current vs. Temperature
Figure 3. Input Offset Voltage Drift (TCVOS
)
15
10
5
420
340
260
180
100
V = 5V
S
V
= 5V
S
0
–75
–50
–25
0
25
50
75
100
125
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TEMPERATURE (°C)
COMMON-MODE VOLTAGE (V)
Figure 7. Input Offset Current vs. Temperature
Figure 4. Input Bias Current vs. Common-Mode Voltage
Rev. 0 | Page 7 of 12
OP262-EP
5.12
5.06
5.00
4.94
100
80
V
= 5V
S
I
= 250µA
OUT
60
V
= 10V
S
V
= 3V
40
S
I
= 5mA
OUT
4.88
4.82
20
0
–75
–50
–25
0
25
50
75
100
125
150
150
150
0
1
2
3
4
5
6
7
TEMPERATURE (°C)
LOAD CURRENT (mA)
Figure 8. Output High Voltage vs. Temperature
Figure 11. Output Low Voltage to Supply Rail vs. Load Current
0.10
1.0
0.9
0.8
V
= 5V
S
0.08
0.06
0.04
V
= 10V
I
= 5mA
S
OUT
0.7
0.6
0.5
0.4
V
= 5V
S
V
= 3V
S
0.3
0.2
0.1
0
0.02
0
I
= 250µA
75
OUT
–75
–50
–25
0
25
50
100
125
–75
–50
–25
0
25
50
75
100
125
150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Output Low Voltage vs. Temperature
Figure 12. Supply Current/Amplifier vs. Temperature
100
80
0.7
0.6
0.5
0.4
R
= 10kΩ
L
T
= 25°C
A
V
= 5V
S
60
40
R
= 2kΩ
L
20
0
R
= 600kΩ
L
0
2
4
6
8
10
12
–75
–50
–25
0
25
50
75
100
125
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
Figure 13. Supply Current/Amplifier vs. Supply Voltage
Figure 10. Open-Loop Gain vs. Temperature
Rev. 0 | Page 8 of 12
OP262-EP
4
3
50
40
V
T
= 5V
= 25°C
S
A
GAIN
0.1%
0.01%
V
T
= 5V
= 25°C
S
A
30
2
45
20
1
90
PHASE
10
0
135
180
225
270
0
–1
–2
–3
–4
–10
–20
–30
0.1%
0.01%
100k
1M
10M
FREQUENCY (Hz)
100M
0
200
400
600
800
1000
1000
1k
SETTLING TIME (ns)
Figure 14. Open-Loop Gain and Phase vs. Frequency (No Load)
Figure 17. Step Size vs. Settling Time
60
60
50
40
30
20
10
0
V
T
V
= 5V
= 25°C
S
V
T
R
= 5V
S
A
= 25°C
= 830Ω
= 5pF
= ±50mV
A
OUT
= 10kΩ
R
L
L
40
20
L
C
+OS
0
–OS
–20
–30
10k
100k
1M
10M
100M
10
100
CAPACITANCE (pF)
FREQUENCY (Hz)
Figure 15. Closed-Loop Gain vs. Frequency
Figure 18. Small-Signal Overshoot vs. Capacitance
5
4
3
2
1
0
70
V
T
= 5V
= 25°C
S
60
50
40
30
20
10
0
A
V
= 5V
S
A
R
C
= 1
VCL
= 10kΩ
= 15pF
= 25°C
L
L
T
A
DISTORTION<1%
10k
100k
FREQUENCY (Hz)
1M
10M
1
10
100
FREQUENCY (Hz)
Figure 16. Maximum Output Swing vs. Frequency
Figure 19. Voltage Noise Density vs. Frequency
Rev. 0 | Page 9 of 12
OP262-EP
7
6
5
90
80
70
60
50
40
30
20
V
T
= 5V
= 25°C
V
= 5V
S
= 25°C
S
T
A
A
4
3
2
1
+PSRR
–PSRR
0
1
10
100
FREQUENCY (Hz)
1k
1k
10k
100k
FREQUENCY (Hz)
1M
10M
Figure 20. Current Noise Density vs. Frequency
Figure 23. PSRR vs. Frequency
300
250
200
150
100
50
20mV
2s
V
T
= 5V
= 25°C
S
A
A
= 10
VCL
A
= 1
V
A
= 5V
VCL
S
= 100kΩ
V
en = 0.5µV p-p
0
100k
1M
FREQUENCY (Hz)
10M
Figure 24. 0.1 Hz to 10 Hz Noise
Figure 21. Output Impedance vs. Frequency
90
80
70
60
50
40
30
20
V
S
= 5V
= 25°C
2V
V
V
A
= 12V p-p
= ±5V
= 1
IN
T
A
S
V
2V
20µs
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 22. CMRR vs. Frequency
Figure 25. No Phase Reversal (VIN = 12 V p-p, VS = 5 V, AV = 1)
Rev. 0 | Page 10 of 12
OP262-EP
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
8
1
5
4
6.20 (0.2441)
5.80 (0.2284)
4.00 (0.1574)
3.80 (0.1497)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
BSC
45°
1.75 (0.0688)
1.35 (0.0532)
0.25 (0.0098)
0.10 (0.0040)
8°
0°
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
1.27 (0.0500)
0.40 (0.0157)
0.25 (0.0098)
0.17 (0.0067)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 26. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Model1
Temperature Range
Package Description
Package Option
OP262TRZ-EP
OP262TRZ-EP-R7
−55°C to +125°C
−55°C to +125°C
8-Lead Standard Small Outline Package [SOIC_N]
8-Lead Standard Small Outline Package [SOIC_N]
R-8
R-8
1 Z = RoHS Compliant Part.
Rev. 0 | Page 11 of 12
OP262-EP
NOTES
©2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09256-0-7/10(0)
Rev. 0 | Page 12 of 12
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