SSM2517CBZ-R7 [ADI]
PDM Digital Input, Mono 2.4 W Class-D Audio Amplifier;
| 型号： | SSM2517CBZ-R7 |
| 厂家： | 
ADI |
| 描述： | PDM Digital Input, Mono 2.4 W Class-D Audio Amplifier 光电二极管 |
| 文件： | 总16页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PDM Digital Input, Mono
2.4 W Class-D Audio Amplifier
SSM2517
enables extremely low real-world power consumption from
digital audio sources with excellent audio performance. Using
the SSM2517, audio can be transmitted digitally to the audio
amplifier, significantly reducing the effect of noise sources such as
GSM interference or other digital signals on the transmitted audio.
The SSM2517 is capable of delivering 2.4 W of continuous output
power with <1% THD + N driving a 4 Ω load from a 5.0 V supply.
Data Sheet
FEATURES
Filterless digital Class-D amplifier
Pulse density modulation (PDM) digital input interface
2.4 W into 4 Ω load and 1.38 W into 8 Ω load at 5.0 V supply
with <1% total harmonic distortion plus noise (THD + N)
Available in 9-ball, 1.5 mm × 1.5 mm, 0.5 mm pitch WLCSP
92% efficiency into 8 Ω at full scale
Output noise: 43 μV rms at 3.6 V, A-weighted
THD + N: 0.035% at 1 kHz, 100 mW output power
PSRR: 85 dB at 217 Hz, input referred with dither input
Quiescent power consumption: 10.4 mW
(VDD = 1.8 V, PVDD = 3.6 V, 8 Ω + 33 μH load)
Pop-and-click suppression
The SSM2517 features a high efficiency, low noise modulation
scheme that requires no external LC output filters. The closed-loop,
three-level modulator design retains the benefits of an all-digital
amplifier, yet enables very good PSRR and audio performance. The
modulation continues to provide high efficiency even at low output
power and has an SNR of 96 dB. Spread-spectrum pulse density
modulation is used to provide lower EMI-radiated emissions
compared with other Class-D architectures.
Configurable with PDM pattern inputs
Short-circuit and thermal protection with autorecovery
Smart power-down when PDM stop condition
or no clock input detected
64 × fS or 128 × fS operation supporting 3 MHz and 6 MHz clocks
DC blocking high-pass filter and static input dc protection
User-selectable ultralow EMI emissions mode
Power-on reset (POR)
The SSM2517 has a four-state gain and sample frequency selection
pin that can select two different gain settings, optimized for 3.6 V
and 5 V operation. This same pin also controls the internal digital
filtering and clocking, which can be set for 64 × fS or 128 × fS input
sample rates to support both 3 MHz and 6 MHz PDM clock rates.
The SSM2517 has a micropower shutdown mode with a typical
shutdown current of 1 μA for both power supplies. Shutdown is
enabled automatically by gating input clock and data signals. A
standby mode can be entered by applying a designated PDM stop
condition sequence. The device also includes pop-and-click sup-
pression circuitry. This suppression circuitry minimizes voltage
glitches at the output when entering or leaving the low power
state, reducing audible noises on activation and deactivation.
Minimal external passive components
APPLICATIONS
Mobile handsets
GENERAL DESCRIPTION
The SSM2517 is a PDM digital input Class-D power amplifier
that offers higher performance than existing DAC plus Class-D
solutions. The SSM2517 is ideal for power sensitive applications,
such as mobile phones and portable media players, where system
noise can corrupt the small analog signal sent to the amplifier.
The SSM2517 is specified over the industrial temperature range
of −40°C to +85°C. It has built-in thermal shutdown and output
short-circuit protection. It is available in a 9-ball, 1.5 mm × 1.5 mm
wafer level chip scale package (WLCSP).
The SSM2517 combines an audio digital-to-analog converter
(DAC), a power amplifier, and a PDM digital interface on a single
chip. The integrated DAC plus analog Σ-Δ modulator architecture
FUNCTIONAL BLOCK DIAGRAM
VDD
PVDD
PGND
SSM2517
POWER-ON
RESET
CLOCKING POWER
CONTROL
PDAT
PCLK
OUT+
OUT–
Σ-∆
INPUT
INTERFACE
FILTERING/
DAC
FULL-BRIDGE
POWER STAGE
CLASS-D
MODULATOR
GAIN_FS
LRSEL
Figure 1.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2010-2011 Analog Devices, Inc. All rights reserved.
SSM2517
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Master Clock............................................................................... 13
Power Supplies............................................................................ 13
Power Control............................................................................. 13
Power-On Reset/Voltage Supervisor ....................................... 13
System Gain/Input Frequency.................................................. 13
PDM Pattern Control ................................................................ 14
EMI Noise.................................................................................... 14
Output Modulation Description .............................................. 14
Applications Information.............................................................. 15
Layout .......................................................................................... 15
Power Supply Decoupling ......................................................... 15
Outline Dimensions....................................................................... 16
Ordering Guide .......................................................................... 16
Applications....................................................................................... 1
General Description......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Digital Input Specifications......................................................... 4
PDM Interface Digital Timing Specifications .......................... 5
Absolute Maximum Ratings............................................................ 6
Thermal Resistance ...................................................................... 6
ESD Caution.................................................................................. 6
Pin Configuration and Function Descriptions............................. 7
Typical Performance Characteristics ............................................. 8
Theory of Operation ...................................................................... 13
REVISION HISTORY
9/11—Rev. A to Rev. B
Changes to Table 3, Endnote 1, and Figure 2................................ 5
5/11—Rev. 0 to Rev. A
Changes to Table 6, LRSEL Pin Description................................. 7
10/10—Revision 0: Initial Version
Rev. B | Page 2 of 16
Data Sheet
SSM2517
SPECIFICATIONS
PVDD = 5.0 V, VDD = 1.8 V, fS = 128×, TA = 25°C, RL = 8 Ω + 33 μH, unless otherwise noted. When fS = 128×, PDM clock = 6.144 MHz;
when fS = 64×, PDM clock = 3.072 MHz.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
DEVICE CHARACTERISTICS
Output Power
PO
f = 1 kHz, BW = 20 kHz
RL = 4 Ω, THD = 1%, PVDD = 5.0 V
RL = 8 Ω, THD = 1%, PVDD = 5.0 V
RL = 4 Ω, THD = 1%, PVDD = 3.6 V
RL = 8 Ω, THD = 1%, PVDD = 3.6 V
RL = 4 Ω, THD = 10%, PVDD = 3.6 V
RL = 8 Ω, THD = 10%, PVDD = 3.6 V
2.4
1.38
1.2
0.7
1.5
0.9
W
W
W
W
W
W
Total Harmonic Distortion Plus Noise THD + N f = 1 kHz, BW = 20 kHz
PO = 100 mW into 8 Ω, PVDD = 3.6 V
0.035
0.1
0.12
3.6
1.0
5.2
2.3
86
92
290
%
%
%
%
%
%
%
%
%
kHz
PO = 500 mW into 8 Ω, PVDD = 3.6 V
PO = 1 W into 8 Ω, PVDD = 5.0 V
RL = 4 Ω, −6 dBFS input, PVDD = 5.0 V
RL = 8 Ω, −6 dBFS input, PVDD = 5.0 V
RL = 4 Ω, −6 dBFS input, PVDD = 3.6 V
RL = 8 Ω, −6 dBFS input, PVDD = 3.6 V
PO = 2.4 W into 4 Ω, PVDD = 5.0 V
PO = 1.38 W into 8 Ω, PVDD = 5.0 V
No input
Efficiency
η
Average Switching Frequency
Closed-Loop Gain
fSW
Gain
−6 dBFS PDM input, BTL output,
f = 1 kHz
PVDD = 3.6 V
PVDD = 5.0 V
Gain = 6 dB
3.5
4.78
0.5
VP
VP
mV
ms
MHz
MHz
Differential Output Offset Voltage
Low Power Mode Wake Time
Input Sampling Frequency
VOOS
tWAKE
fS
0.5
3.23
6.46
fS = 64×
fS = 128×
1.84
3.68
3.072
6.144
POWER SUPPLY
Supply Voltage Range
Amplifier Power Supply
Digital Power Supply
Power Supply Rejection Ratio
Supply Current, H-Bridge
PVDD
VDD
PSRRGSM
IPVDD
2.5
1.62
3.6
1.8
85
5.5
3.6
V
V
dB
VRIPPLE = 100 mV at 217 Hz
Dither input, 8 Ω + 33 μH load
PVDD = 5.0 V, fS = 64×
PVDD = 5.0 V, fS = 128×
PVDD = 3.6 V, fS = 64×
PVDD = 3.6 V, fS = 128×
PVDD = 2.5 V, fS = 64×
PVDD = 2.5 V, fS = 128×
PVDD = 5.0 V
3.1
3.2
2.6
2.7
2.2
2.3
0.0
100
mA
mA
mA
mA
mA
mA
mA
nA
Standby Current
Power-Down Current
Supply Current, Modulator
IVDD
Dither input, 8 Ω + 33 μH load
VDD = 3.3 V, fS = 64×
VDD = 3.3 V, fS = 128×
VDD = 1.8 V, fS = 64×
1.3
2.4
0.6
1.2
mA
mA
mA
mA
VDD = 1.8 V, fS = 128×
Rev. B | Page 3 of 16
SSM2517
Data Sheet
Parameter
Symbol
Test Conditions/Comments
VDD = 1.8 V, fS = 64×
VDD = 1.8 V, fS = 128×
VDD = 3.3 V
Min
Typ
57
114
3.0
0.9
Max
Unit
μA
μA
μA
μA
Standby Current
Shutdown Current
VDD = 1.8 V
NOISE PERFORMANCE
Output Voltage Noise
en
Dithered input, A-weighted
PVDD = 3.6 V, fS = 64×
PVDD = 3.6 V, fS = 128×
PVDD = 5.0 V, fS = 64×
PVDD = 5.0 V, fS = 128×
43
52
52
60
μV
μV
μV
μV
Signal-to-Noise Ratio
SNR
PO = 1.38 W, PVDD = 5.0 V, RL = 8 Ω,
A-weighted
fS = 64×
fS = 128×
96
95
dB
dB
DIGITAL INPUT SPECIFICATIONS
Table 2.
Parameter
Symbol
Min
Typ
Max
Unit
INPUT SPECIFICATIONS
Input Voltage High
PCLK, PDAT, LRSEL Pins
GAIN_FS Pin
Input Voltage Low
PCLK, PDAT, LRSEL Pins
GAIN_FS Pin
Input Leakage High
PDAT, LRSEL, GAIN_FS Pins
PCLK Pin
Input Leakage Low
PDAT, LRSEL, GAIN_FS Pins
PCLK Pin
VIH
0.7 × VDD
1.35
3.6
5.5
V
V
V
V
V
VIL
IIH
IIL
−0.3
−0.3
0.3 × VDD
+0.35
1
3
μA
μA
1
3
5
μA
μA
pF
Input Capacitance
Rev. B | Page 4 of 16
Data Sheet
SSM2517
PDM INTERFACE DIGITAL TIMING SPECIFICATIONS
Table 3.
Limit
Parameter
Unit
ns
ns
Description
Valid data start time1
Valid data end time1
tMIN
tMAX
tDS
tDE
44
7
1 The SSM2517 was designed so that the data line can transition coincident with or close to a clock edge. It is not necessary to delay the data line transition until after the
clock edge because the SSM2517 does this internally to ensure good timing margins. The data line should remain constant during the valid sample period illustrated
in Figure 2; it may transition at any other time. Timing is measured from 70% of VDD on the rising edge or 30% VDD on the falling edge.
Timing Diagram
PCLK
tDS
tDE
PDAT
VALID LEFT SAMPLE
VALID RIGHT SAMPLE
VALID LEFT SAMPLE
Figure 2. PDM Interface Timing
Rev. B | Page 5 of 16
SSM2517
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings apply at 25°C, unless otherwise noted.
THERMAL RESISTANCE
Junction-to-air thermal resistance (θJA) is specified for the worst-
case conditions, that is, a device soldered in a printed circuit board
(PCB) for surface-mount packages. θJA and θJB (junction-to-board
thermal resistance) are determined according to JEDEC JESD51-9
on a 4-layer PCB with natural convection cooling.
Table 4.
Parameter
PVDD Supply Voltage
VDD Supply Voltage
Input Voltage (Signal Source)
ESD Susceptibility
OUT− and OUT+ Pins
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Lead Temperature (Soldering, 60 sec)
Rating
−0.3 V to +6 V
−0.3 V to +3.6 V
−0.3 V to +3.6 V
4 kV
Table 5. Thermal Resistance
8 kV
Package Type
PCB θJA
1S0P 162 39
2S0P 76 21
θJB
Unit
°C/W
°C/W
−65°C to +150°C
−40°C to +85°C
−65°C to +165°C
300°C
9-Ball, 1.5 mm × 1.5 mm WLCSP
ESD CAUTION
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. B | Page 6 of 16
Data Sheet
SSM2517
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
BALL A1
CORNER
1
2
3
OUT+
PVDD
PGND
A
B
C
OUT–
PCLK
LRSEL
PDAT
VDD
GAIN_FS
TOP VIEW
(BALL SIDE DOWN)
Not to Scale
Figure 3. Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
Mnemonic
Function
Output
Supply
Ground
Output
Input
Description
A1
A2
A3
B1
B2
B3
C1
OUT+
PVDD
PGND
OUT−
LRSEL
VDD
Noninverting Output.
Amplifier Power, 2.5 V to 5.5 V.
Amplifier Ground.
Inverting Output.
Left/Right Channel Select. Pull up to VDD for right channel; tie to ground for left channel.
Digital Power, 1.62 V to 3.6 V.
PDM Interface Master Clock.
Supply
Input
PCLK
C2
PDAT
Input
PDM Data Signal.
C3
GAIN_FS
Input
Gain and Sample Rate Selection Pin.
Rev. B | Page 7 of 16
SSM2517
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
100
100
10
R
= 8Ω + 33µH
R = 8Ω + 33µH
L
GAIN = 5V
SAMPLE RATE = 128×
(6.144MHz)
L
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
10
1
1
0.1
PVDD = 2.5V
PVDD = 2.5V
PVDD = 3.6V
PVDD = 5V
PVDD = 3.6V
PVDD = 5V
0.1
0.01
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
OUTPUT POWER (W)
OUTPUT POWER (W)
Figure 4. THD + N vs. Output Power into 8 Ω, Gain = 5 V, fS = 64×
Figure 7. THD + N vs. Output Power into 8 Ω, Gain = 5 V, fS = 128×
100
100
R
= 8Ω + 33µH
R = 8Ω + 33µH
L
L
GAIN = 3.6V
GAIN = 3.6V
SAMPLE RATE = 64×
(3.072MHz)
SAMPLE RATE = 128×
(6.144MHz)
10
1
10
1
PVDD = 2.5V
PVDD = 2.5V
PVDD = 3.6V
PVDD = 5V
PVDD = 3.6V
PVDD = 5V
0.1
0.01
0.1
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
OUTPUT POWER (W)
OUTPUT POWER (W)
Figure 5. THD + N vs. Output Power into 8 Ω, Gain = 3.6 V, fS = 64×
Figure 8. THD + N vs. Output Power into 8 Ω, Gain = 3.6 V, fS = 128×
100
100
R
= 4Ω + 15µH
R = 4Ω + 15µH
L
L
GAIN = 5V
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
SAMPLE RATE = 128×
(6.144MHz)
10
1
10
1
PVDD = 3.6V
PVDD = 3.6V
PVDD = 2.5V
PVDD = 2.5V
0.1
0.01
0.1
0.01
PVDD = 5V
PVDD = 5V
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
OUTPUT POWER (W)
OUTPUT POWER (W)
Figure 6. THD + N vs. Output Power into 4 Ω, Gain = 5 V, fS = 64×
Figure 9. THD + N vs. Output Power into 4 Ω, Gain = 5 V, fS = 128×
Rev. B | Page 8 of 16
Data Sheet
SSM2517
100
100
10
R
= 4Ω + 15µH
R = 4Ω + 15µH
L
GAIN = 3.6V
SAMPLE RATE = 128×
(6.144MHz)
L
GAIN = 3.6V
SAMPLE RATE = 64×
(3.072MHz)
10
1
PVDD = 3.6V
PVDD = 3.6V
1
0.1
PVDD = 2.5V
PVDD = 2.5V
0.1
0.01
PVDD = 5V
PVDD = 5V
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
OUTPUT POWER (W)
OUTPUT POWER (W)
Figure 10. THD + N vs. Output Power into 4 Ω, Gain = 3.6 V, fS = 64×
Figure 13. THD + N vs. Output Power into 4 Ω, Gain = 3.6 V, fS = 128×
100
100
R
= 8Ω + 33µH
R = 4Ω + 15µH
L
L
PVDD = 5V
PVDD = 5V
GAIN = 5V
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
SAMPLE RATE = 64×
(3.072MHz)
10
1
10
1
1.0W
0.5W
1.0W
0.5W
0.1
0.01
0.1
0.01
0.25W
100
0.25W
10
100
1k
FREQUENCY (Hz)
10k
100k
10
1k
FREQUENCY (Hz)
10k
100k
Figure 11. THD + N vs. Frequency, PVDD = 5 V, Gain = 5 V,
RL = 8 Ω, fS = 64×
Figure 14. THD + N vs. Frequency, PVDD = 5 V, Gain = 5 V,
RL = 4 Ω, fS = 64×
100
10
100
10
R
= 8Ω + 33µH
R = 4Ω + 15µH
L
PVDD = 3.6V
GAIN = 3.6V
SAMPLE RATE = 64×
(3.072MHz)
L
PVDD = 3.6V
GAIN = 3.6V
SAMPLE RATE = 64×
(3.072MHz)
1
0.1
1
0.1
0.5W
0.5W
0.25W
0.25W
0.125W
0.125W
0.01
0.01
10
100
1k
FREQUENCY (Hz)
10k
100k
10
100
1k
FREQUENCY (Hz)
10k
100k
Figure 12. THD + N vs. Frequency, PVDD = 3.6 V, Gain = 3.6 V,
RL = 8 Ω, fS = 64×
Figure 15. THD + N vs. Frequency, PVDD = 3.6 V, Gain = 3.6 V,
RL = 4 Ω, fS = 64×
Rev. B | Page 9 of 16
SSM2517
Data Sheet
100
100
10
R
= 8Ω + 33µH
R = 4Ω + 15µH
L
PVDD = 2.5V
GAIN = 3.6V
SAMPLE RATE = 64×
(3.072MHz)
L
PVDD = 2.5V
GAIN = 3.6V
SAMPLE RATE = 64×
(3.072MHz)
10
1
1
0.1
0.25W
0.2W
0.1W
0.1W
0.1
0.01
0.05W
0.05W
0.01
10
100
1k
FREQUENCY (Hz)
10k
100k
10
100
1k
FREQUENCY (Hz)
10k
100k
Figure 16. THD + N vs. Frequency, PVDD = 2.5 V, Gain = 3.6 V,
RL = 8 Ω, fS = 64×
Figure 19. THD + N vs. Frequency, PVDD = 2.5 V, Gain = 3.6 V,
RL = 4 Ω, fS = 64×
4.0
0
R
= 8Ω + 33µH
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
L
PVDD = 3.6V
GAIN = 3.6V
SAMPLE RATE = 128×
(6.144MHz)
–20
–40
R
= 4Ω + 15µH
L
3.5
3.0
2.5
2.0
1.5
R
= 8Ω + 33µH
L
–60
–80
NO LOAD
–100
–120
–140
–160
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
2
4
6
8
10
12
14
16
18
20
SUPPLY VOLTAGE (V)
FREQUENCY (kHz)
Figure 17. Quiescent Current (H-Bridge) vs. Supply Voltage,
Gain = 5 V, fS = 64×
Figure 20. Output Spectrum vs. Frequency, PVDD = 3.6 V, Gain = 3.6 V,
RL = 8 Ω, fS = 128×
1.8
1.6
1.8
R
= 8Ω + 33µH
R = 8Ω + 33µH
L
GAIN = 5V
SAMPLE RATE = 128×
(6.144MHz)
L
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
THD + N = 10%
THD + N = 10%
THD + N = 1%
THD + N = 1%
2.5
3.0
3.5
4.0
4.5
5.0
2.5
3.0
3.5
4.0
4.5
5.0
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 18. Maximum Output Power vs. Supply Voltage, Gain = 5 V,
RL = 8 Ω, fS = 64×
Figure 21. Maximum Output Power vs. Supply Voltage, Gain = 5 V,
RL = 8 Ω, fS = 128×
Rev. B | Page 10 of 16
Data Sheet
SSM2517
3.5
3.5
3.0
R
= 4Ω + 15µH
R = 4Ω + 15µH
L
GAIN = 5V
SAMPLE RATE = 128×
(6.144MHz)
L
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
3.0
2.5
2.0
1.5
1.0
0.5
2.5
2.0
1.5
1.0
0.5
THD + N = 10%
THD + N = 10%
THD + N = 1%
THD + N = 1%
0
2.5
0
2.5
3.0
3.5
4.0
4.5
5.0
3.0
3.5
4.0
4.5
5.0
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 22. Maximum Output Power vs. Supply Voltage, Gain = 5 V,
RL = 4 Ω, fS = 64×
Figure 25. Maximum Output Power vs. Supply Voltage, Gain = 5 V,
RL = 4 Ω, fS = 128×
100
100
PVDD = 5V
PVDD = 3.6V
PVDD = 2.5V
90
80
70
60
50
40
30
20
10
0
90
80
PVDD = 5V
PVDD = 3.6V
70
60
50
40
30
20
10
0
PVDD = 2.5V
R
= 8Ω + 33µH
L
R
= 4Ω + 15µH
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
L
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
OUTPUT POWER (W)
OUTPUT POWER (W)
Figure 23. Efficiency vs. Output Power into 8 Ω, Gain = 5 V, fS = 64×
Figure 26. Efficiency vs. Output Power into 4 Ω, Gain = 5 V, fS = 64×
450
800
R
= 8Ω + 33µH
R = 4Ω + 15µH
L
L
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
GAIN = 5V
SAMPLE RATE = 64×
(3.072MHz)
400
350
300
250
200
150
100
50
700
600
500
400
300
200
100
0
PVDD = 5V
PVDD = 5V
PVDD = 3.6V
PVDD = 3.6V
PVDD = 2.5V
PVDD = 2.5V
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT POWER (W)
OUTPUT POWER (W)
Figure 24. Supply Current (H-Bridge) vs. Output Power into 8 Ω,
Gain = 5 V, fS = 64×
Figure 27. Supply Current (H-Bridge) vs. Output Power into 4 Ω,
Gain = 5 V, fS = 64×
Rev. B | Page 11 of 16
SSM2517
Data Sheet
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
5
4
OUTPUT
PCLK
3
2
1
PVDD = 3.6V
PVDD = 5V
0
–1
–2
–100
10
–40 –20
0
20
40
60
80
100 120 140 160
100
1k
10k
100k
TIME (µs)
FREQUENCY (Hz)
Figure 28. Power Supply Rejection Ratio (PSRR) vs. Frequency
Figure 29. Turn-On Response
Rev. B | Page 12 of 16
Data Sheet
SSM2517
THEORY OF OPERATION
MASTER CLOCK
SYSTEM GAIN/INPUT FREQUENCY
The SSM2517 requires a clock present at the PCLK input pin.
This clock must be fully synchronous with the incoming digital
audio on the serial interface. The clock frequencies must fall
into one of these ranges: 1.84 MHz to 3.23 MHz or 3.68 MHz
to 6.46 MHz.
The GAIN_FS pin is used to set the internal gain and filtering
configuration for different sample rates of the SSM2517. This pin
can be set to one of four states by connecting the pin to PVDD or
PGND (see Table 7). The internal gain and filtering can also be
set via PDM pattern control, allowing these settings to be modi-
fied during operation (see the PDM Pattern Control section).
POWER SUPPLIES
Table 7. GAIN_FS Function Descriptions
The SSM2517 requires two power supplies: PVDD and VDD.
Device Setting
GAIN Pin Configuration
PVDD
fS = 64 × PCLK, Gain = 5 V
Pull up to PVDD with a 47 kΩ
resistor
Pull down to PGND with a 47 kΩ
resistor
The PVDD pin supplies power to the full-bridge power stage
of a MOSFET and its associated drive, control, and protection
circuitry. It also supplies power to the digital-to-analog converter
(DAC) and to the Class-D PDM modulator. PVDD can operate
from 2.5 V to 5.5 V and must be present to obtain audio output.
Lowering the supply voltage of PVDD results in lower maximum
output power and, therefore, lower power consumption.
fS = 128 × PCLK, Gain = 5 V
fS = 64 × PCLK, Gain = 3.6 V
fS = 128 × PCLK, Gain = 3.6 V
Pull up to PVDD
Pull down to PGND
The SSM2517 has an internal analog gain control such that
when GAIN_FS is tied to PGND or PVDD via a 47 kΩ resistor
(5 V gain setting), a −6.02 dBFS PDM input signal results in
an amplifier output voltage of 5 V peak. This setting should
produce optimal noise performance when PVDD = 5 V.
VDD
The VDD pin provides power to the digital logic circuitry.
VDD can operate from 1.62 V to 3.6 V and must be present
to obtain audio output. Lowering the supply voltage of VDD
results in lower power consumption but does not affect audio
performance.
When the GAIN_FS pin is tied directly to PGND or PVDD, the
gain is adjusted so that a −6.02 dBFS PDM input signal results
in an amplifier output voltage of 3.6 V peak. This setting should
produce optimal noise performance when PVDD = 3.6 V.
POWER CONTROL
On device power-up, PVDD must first be applied to the device,
which latches in the designated GAIN_FS pin functionality.
The SSM2517 can handle input sample rates of 64 × fS (~3 MHz)
and 128 × fS (~6 MHz). Different internal digital filtering is used
in each of these cases. Selection of the sample rate is also set via
the GAIN_FS pin (see Table 7).
The SSM2517 contains a smart power-down feature. When
enabled, the smart power-down feature looks at the incoming
digital audio and, if it receives the PDM stop condition of at
least 128 repeated 0xAC bytes (1024 clock cycles), it places the
SSM2517 in the standby state. In the standby state, the PCLK can
be removed, resulting in a full power-down state. This state is
the lowest power condition possible. When the PCLK is turned
on again and a single non-stop condition input is received, the
SSM2517 leaves the full power-down state and resumes normal
operation.
Because the 64 × fS mode provides better performance with lower
power consumption, its use is recommended. The 128 × fS mode
should be used only when overall system noise performance is
limited by the source modulator.
POWER-ON RESET/VOLTAGE SUPERVISOR
The SSM2517 includes an internal power-on reset and voltage
supervisor circuit. This circuit provides an internal reset to all
circuitry whenever PVDD or VDD is substantially below the
nominal operating threshold. This circuit simplifies supply
sequencing during initial power-on.
The circuit also monitors the power supplies to the SSM2517. If
the supply voltages fall below the nominal operating threshold,
this circuit stops the output and issues a reset. This ensures that
no damage occurs due to low voltage operation and that no
pops can occur under nearly any power removal condition.
Rev. B | Page 13 of 16
SSM2517
Data Sheet
PDM PATTERN CONTROL
OUTPUT MODULATION DESCRIPTION
The SSM2517 has a simple control mechanism that can set the
part for low power states and control functionality. This is
accomplished by sending a repeating 8-bit pattern to the device.
Different patterns set different functionality (see Table 8).
The SSM2517 uses three-level, Σ-Δ output modulation. Each
output can swing from PGND to PVDD and vice versa. Ideally,
when no input signal is present, the output differential voltage is
0 V because there is no need to generate a pulse. In a real-world
situation, noise sources are always present.
Any pattern must be repeated a minimum of 128 times. The
part is automatically muted when a pattern is detected so that
a pattern can be set while the part is operational without a
pop/click due to pattern transition.
Due to this constant presence of noise, a differential pulse is
generated, when required, in response to this stimulus. A small
amount of current flows into the inductive load when the differ-
ential pulse is generated.
All functionality set via patterns returns to its default value after
a clock-loss power-down.
Most of the time, however, the output differential voltage is 0 V,
due to the Analog Devices, Inc., three-level, Σ-Δ output modula-
tion. This feature ensures that the current flowing through the
inductive load is small.
Table 8. PDM Watermarking Pattern Control Descriptions
Pattern
Control Description
0xAC
Power-down. All blocks off except for PDM interface.
Normal start-up time.
When the user wants to send an input signal, an output pulse
(OUT+ and OUT−) is generated to follow the input voltage.
The differential pulse density (VOUT) is increased by raising
the input signal level. Figure 30 depicts three-level, Σ-Δ output
modulation with and without input stimulus.
0xD8
0xD4
0xD2
Gain optimized for PVDD = 5 V operation.
Overrides GAIN_FS pin setting.
Gain optimized for PVDD = 3.6 V operation.
Overrides GAIN_FS pin setting.
Gain optimized for PVDD = 2.5 V operation.
Overrides GAIN_FS pin setting.
OUTPUT = 0V
+5V
OUT+
0V
0xD1
0xE1
0xE2
0xE4
fS set to opposite value determined by GAIN_FS pin.
Ultralow EMI mode.
Half clock cycle pulse mode for power savings.
Special 32 kHz/128 × fS operation mode.
+5V
OUT–
0V
+5V
VOUT
0V
–5V
OUTPUT > 0V
+5V
EMI NOISE
OUT+
OUT–
VOUT
0V
+5V
The SSM2517 uses a proprietary modulation and spread-
spectrum technology to minimize EMI emissions from the
device. For applications that have difficulty passing FCC
Class-B emission tests, the SSM2517 includes a modulation
select mode (ultralow EMI emissions mode) that significantly
reduces the radiated emissions at the Class-D outputs, particu-
larly above 100 MHz. This mode is enabled by activating PDM
Watermarking Pattern 0xE1 (see Table 8).
0V
+5V
0V
OUTPUT < 0V
+5V
OUT+
OUT–
VOUT
0V
+5V
0V
0V
–5V
Figure 30. Three-Level, Σ-Δ Output Modulation With and Without Input Stimulus
Rev. B | Page 14 of 16
Data Sheet
SSM2517
APPLICATIONS INFORMATION
Properly designed multilayer PCBs can reduce EMI emissions
and increase immunity to the RF field by a factor of 10 or more,
compared with double-sided boards. A multilayer board allows
a complete layer to be used for the ground plane, whereas the
ground plane side of a double-sided board is often disrupted by
signal crossover.
LAYOUT
As output power increases, care must be taken to lay out PCB
traces and wires properly among the amplifier, load, and power
supply. A good practice is to use short, wide PCB tracks to
decrease voltage drops and minimize inductance. The PCB
layout engineer must avoid ground loops where possible to
minimize common-mode current associated with separate paths
to ground. Ensure that track widths are at least 200 mil per inch
of track length for lowest DCR, and use 1 oz or 2 oz copper PCB
traces to further reduce IR drops and inductance. A poor layout
increases voltage drops, consequently affecting efficiency. Use
large traces for the power supply inputs and amplifier outputs to
minimize losses due to parasitic trace resistance.
POWER SUPPLY DECOUPLING
To ensure high efficiency, low total harmonic distortion (THD),
and high PSRR, proper power supply decoupling is necessary.
Noise transients on the power supply lines are short-duration
voltage spikes. These spikes can contain frequency components
that extend into the hundreds of megahertz.
The power supply inputs must be decoupled with a good quality,
low ESL, low ESR capacitor, with a minimum value of 4.7 μF
for the PVDD pin and 0.1 μF for the VDD pin. This capacitor
bypasses low frequency noises to the ground plane. For high
frequency transient noises, use a 0.1 μF capacitor as close as
possible to the PVDD and VDD pins of the device. Placing the
decoupling capacitors as close as possible to the SSM2517 helps
to maintain efficient performance.
Proper grounding guidelines help to improve audio performance,
minimize crosstalk between channels, and prevent switching
noise from coupling into the audio signal. To maintain high
output swing and high peak output power, the PCB traces that
connect the output pins to the load, as well as the PCB traces to
the supply pins, should be as wide as possible to maintain the
minimum trace resistances. It is also recommended that a large
ground plane be used for minimum impedances.
In addition, good PCB layout isolates critical analog paths from
sources of high interference. High frequency circuits (analog
and digital) should be separated from low frequency circuits.
Rev. B | Page 15 of 16
SSM2517
Data Sheet
OUTLINE DIMENSIONS
0.655
0.600
0.545
1.490
1.460 SQ
1.430
SEATING
PLANE
3
2
1
A
B
C
0.350
0.320
0.290
BALL A1
IDENTIFIER
0.50
BALL PITCH
BOTTOM VIEW
(BALL SIDE UP)
TOP VIEW
(BALL SIDE DOWN)
0.385
0.360
0.335
0.270
0.240
0.210
Figure 31. 9-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-9-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Temperature Range
Package Description
Package Option
SSM2517CBZ-R7
SSM2517CBZ-RL
EVAL-SSM2517Z
−40°C to +85°C
−40°C to +85°C
9-Ball Wafer Level Chip Scale Package [WLCSP]
9-Ball Wafer Level Chip Scale Package [WLCSP]
Evaluation Board
CB-9-2
CB-9-2
1 Z = RoHS Compliant Part.
©2010-2011 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09211-0-9/11(B)
Rev. B | Page 16 of 16
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