APT30M61SFLL [ADPOW]
POWER MOS 7 FREDFET; 功率MOS 7 FREDFET
| 型号： | APT30M61SFLL |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 FREDFET |
| 文件： | 总5页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT30M61BFLL
APT30M61SFLL
300V 54A 0.061Ω
R
POWER MOS 7 FREDFET
D3PAK
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
D
S
G
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT30M61BFLL-SFLL
UNIT
VDSS
ID
Drain-Source Voltage
300
54
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
216
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
403
PD
3.23
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
54
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
30
4
1300
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
2
Drain-Source On-State Resistance
(VGS = 10V, 27A)
0.061
250
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT30M61BFLL-SFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
V
= 0V
Input Capacitance
3720
920
GS
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
41
64
23
26
12
20
36
3
V
= 10V
Total Gate Charge
GS
V
= 150V
Qgs
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 54A @ 25°C
D
Qgd
RESISTIVESWITCHING
td(on)
tr
V
= 15V
GS
V
= 150V
DD
td(off)
Turn-off Delay Time
Fall Time
I
= 54A @ 25°C
D
tf
R
= 0.6Ω
13
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
367
319
451
Turn-on Switching Energy
V
= 200V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 54A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 200V V = 15V
GS
DD
Turn-off Switching Energy
I
= 54A, R = 5Ω
348
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
54
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
216
1.3
8
2
VSD
Volts
V/ns
(VGS = 0V, IS = -54A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -54A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
225
400
trr
ns
µC
Reverse Recovery Charge
(IS = -54A, di/dt = 100A/µs)
1.0
4.2
10
Qrr
Peak Recovery Current
(IS = -54A, di/dt = 100A/µs)
IRRM
Amps
20
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.31
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 0.89mH, R = 25Ω, Peak I = 54A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -I 54A
/
≤ 700A/µs
V
R ≤ 300 T ≤ 150°C
dt
S
D
J
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
t
1
0.3
0.10
t
2
t
1
0.05
Duty Factor D =
Peak T = P x Z
/
t
SINGLEPULSE
0.1
2
+ T
J
DM θJC
C
0.05
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT30M61BFLL-SFLL
180
160
140
120
100
80
15V
10V
RC MODEL
9V
Junction
temp. (°C)
0.119
0.191
0.0135F
0.319F
8V
Power
(watts)
60
40
7V
Case temperature. (°C)
20
6V
30
0
0
V
5
10
15
20
25
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
1.40
160
NORMALIZED TO
V
> I (ON) x
R
(ON)MAX.
DS
DS
D
V
= 10V
@
27A
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
GS
140
120
100
80
1.30
1.20
1.10
1.00
V
=10V
GS
T
J
= -55°C
60
T
= +25°C
J
40
V
=20V
80
GS
T
= +125°C
0.90
0.80
J
20
0
0
V
2
4
6
8
10
0
20
40
60
100
120
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.20
1.15
1.10
1.05
1.00
0.95
0.90
60
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 27A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
Typical Performance Curves
APT30M61BFLL-SFLL
10,000
5,000
216
OPERATIONHERE
C
iss
LIMITEDBYR (ON)
100
DS
100µS
1,000
C
oss
10
1mS
100
10
C
rss
10mS
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
5
1
1
10
50 100
300
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
16
14
12
10
I
= 54
D
100
50
V
= 60V
DS
T =+150°C
J
T =+25°C
J
V
= 150V
DS
V
= 240V
DS
8
6
4
2
0
10
5
1
0.3
V
0
10 20 30 40 50 60 70 80 90 100
Q ,TOTALGATECHARGE(nC)
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
50
90
V
= 200V
DD
= 5Ω
R
T
80
70
60
50
40
30
20
10
0
t
G
d(off)
= 125°C
J
t
f
40
L = 100µH
V
= 200V
DD
= 5Ω
R
T
30
20
10
0
G
= 125°C
J
L = 100µH
t
d(on)
t
r
10
20 30
40
50
(A)
60
70
80
90
10 20
30
40 50
(A)
60
70
80
90
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
900
800
700
600
500
400
300
200
100
0
1200
1000
800
V
= 200V
V
I
= 200V
DD
DD
= 54A
R
= 5Ω
G
D
E
off
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
EON includes
EON includes
diode reverse recovery.
diode reverse recovery.
600
E
on
E
on
400
E
off
200
0
10 20 30
40
50 60
(A)
70 80 90
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M61BFLL-SFLL
Gate Voltage
10 %
90%
d(off)
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
d(on)
t
t
r
Drain Current
Drain Voltage
90%
Drain Voltage
Drain Current
90 %
t
f
5 %
5 %
10%
0
10 %
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DS30
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D3PAKPackageOutline
TO-247 Package Outline
4.98 (.196)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
5.08 (.200)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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