APT30M75BFLL [ADPOW]
POWER MOS 7 FREDFET; 功率MOS 7 FREDFET型号: | APT30M75BFLL |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | POWER MOS 7 FREDFET |
文件: | 总4页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APT30M75BFLL
APT30M75SFLL
300V 44A 0.075Ω
BFLL
R
POWER MOS 7 FREDFET
D3PAK
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
SFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
D
S
G
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT30M75
300
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
44
Amps
Volts
1
IDM
Pulsed Drain Current
176
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
329
PD
2.63
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
44
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
300
44
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 22A)
Ohms
µA
0.075
250
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IDSS
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT30M75 BFLL - SFLL
DYNAMIC CHARACTERISTICS
Symbol Characteristic
TestConditions
MIN
MIN
MIN
TYP
3018
771
43
MAX
UNIT
Ciss
Coss
Crss
Qg
InputCapacitance
VGS = 0V
OutputCapacitance
pF
VDS = 25V
f = 1 MHz
VGS = 10V
Reverse Transfer Capacitance
3
Total Gate Charge
57
VDD = 200V
Qgs
Qgd
td(on)
tr
nC
ns
Gate-SourceCharge
Gate-Drain("Miller")Charge
Turn-onDelayTime
Rise Time
21
ID = 44A @ 25°C
23
13
VGS = 15V
VDD = 200V
ID = 44A @ 25°C
RG = 0.6Ω
3
td(off)
tf
Turn-offDelayTime
FallTime
20
2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
MAX
44
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
176
1.3
8
2
(VGS = 0V, IS = -44A)
Volts
V/ns
dv
5
dv
/
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -44A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
200
400
ns
µC
trr
Reverse Recovery Charge
(IS = -44A, di/dt = 100A/µs)
1.1
2.7
10
Qrr
Peak Recovery Current
(IS = -44A, di/dt = 100A/µs)
IRRM
Amps
15.1
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.38
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
JunctiontoAmbient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 1.34mH, R = 25Ω, Peak I = 44A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 44A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
3 See MIL-STD-750 Method 3471
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.40
0.9
0.7
0.5
0.3
0.35
0.30
0.25
0.20
0.15
0.10
Note:
t
1
t
2
t
1
Duty Factor D =
/
t
2
0.1
0.05
0
Peak T = P
x Z
+ T
J
DM θJC
C
0.05
SINGLEPULSE
10-5
10-4
10-3
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
10-2
10-1
1.0
Typical Performance Curves
APT30M75 BFLL - SFLL
100
90
80
70
60
50
40
30
20
RC MODEL
V
=15 &10V
GS
8.5V
0.0329
0.00334
0.00802
0.165
8V
Power
(Watts)
7.5
Junction
temp. ( ”C)
0.158
7V
0.189
6.5V
6V
10
0
Case temperature
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
160
1.40
NORMALIZED TO
V
> I (ON) x
R
MAX.
DS(ON)
DS
D
V
= 10V
@
I
= 22A
D
250µSEC. PULSE TEST
GS
140
120
100
80
@
<0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
T
= -55°C
J
V
=10V
GS
60
V
=20V
GS
40
T
= +25°C
J
0.90
0.80
20
0
T
= +125°C
J
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R
vsDRAINCURRENT
DS(ON)
1.15
1.10
1.05
1.00
45
40
35
30
25
20
15
10
5
0.95
0.90
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 22A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8, R
vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT30M75 BFLL - SFLL
176
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
1,000
100
10
C
100µS
oss
10
1mS
C
rss
T
=+25°C
C
J
T =+150°C
SINGLEPULSE
10mS
1
16
12
1
10
100
300
0
V
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
I
= 44A
D
100
V
=60V
T =+150°C
J
DS
V
=150V
T =+25°C
J
DS
8
V
=240V
DS
10
4
0
1
0
10
20
30
40
50 60
70 80
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
D3PAKPackageOutline
TO-247 Package Outline
4.98 (.196)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
5.08 (.200)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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