APT30M70SVR [MICROSEMI]
100% Avalanche Tested; 100％的雪崩测试
| 型号： | APT30M70SVR |
| 厂家： | 
Microsemi |
| 描述： | 100% Avalanche Tested |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT30M70BVR
APT30M70SVR
300V 48A 0.070Ω
POWER MOS V®
D3PAK
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• FasterSwitching
• LowerLeakage
• 100%AvalancheTested
D
S
• TO-247 or Surface Mount D3PAK Package
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT30M70BVR_SVR
UNIT
VDSS
ID
Drain-Source Voltage
300
48
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
192
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
370
PD
2.96
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
48
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
300
48
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.070
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
250
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT30M70BVR_SVR
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
4890
882
277
152
35
5870
1235
415
225
52
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID[Cont.] @ 25°C
66
99
td(on)
tr
td(off)
tf
VGS = 15V
14
28
V
DD = 0.5 VDSS
21
42
ID = ID[Cont.] @ 25°C
Turn-off Delay Time
Fall Time
57
85
RG = 1.6Ω
10
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
48
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
192
1.3
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
440
5.8
Q rr
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.34
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 1.13mH, R = 25Ω, Peak I = 48A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.02
0.01
t
1
0.01
0.005
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
SINGLE PULSE
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT30M70BVR_SVR
100
80
60
40
20
0
100
80
60
40
20
0
V
=15V
GS
V
=7V, 10V & 15V
GS
6V
V
=10V
6V
GS
V
=7V
GS
5.5V
5V
5.5V
5V
4.5V
4V
4.5V
4V
0
V
30
60
90
120
150
0
V
2
4
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
6
8
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
100
80
60
40
20
0
1.3
NORMALIZED TO
T
= -55°C
J
V
= 10V @ 0.5 I [Cont.]
D
GS
T
= +25°C
J
T
= +125°C
1.2
1.1
1.0
0.9
J
V
> I (ON) x
R
(ON)MAX.
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
D
V
=10V
GS
V
=20V
GS
T
= +125°C
= +25°C
J
T
= -55°C
6
T
J
J
0
V
2
4
8
0
20
40
60
80
100
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
50
1.20
1.15
1.10
1.05
1.00
0.95
0.90
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT30M70BVR_SVR
200
100
50
15,000
10,000
10µS
OPERATION HERE
LIMITED BY R (ON)
DS
100µS
C
iss
5,000
1mS
10
5
C
oss
10mS
1,000
500
C
rss
100mS
DC
1
T
T
=+25°C
=+150°C
C
J
.5
SINGLE PULSE
.1
100
1
V
5
10
50 100
300
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
200
I
= I [Cont.]
D
D
100
V
=60V
DS
T
=+150°C
T =+25°C
J
50
J
V
=150V
DS
10
5
V
=240V
DS
1
.5
4
0
.1
0
50
g
100
150
200
250
300
0
V
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
D3PAK Package Outline
TO-247 Package Outline
4.69 (.185)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC
6.20 (.244)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.81 (.150)
4.50 (.177) Max.
3.12 (.123)
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号：
APT30M75BFLL
Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
MICROSEMI
APT30M75BFLLG
Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
MICROSEMI
APT30M75BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW
APT30M75BLLG
Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
MICROSEMI
APT30M75SFLL
Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
MICROSEMI
APT30M75SFLLG
Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
MICROSEMI
APT30M75SLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW
APT30M75SLLG
Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
MICROSEMI
©2020 ICPDF网 联系我们和版权申明