APT30S20S [ADPOW]
HIGH VOLTAGE SCHOTTKY DIODE; 高压肖特基二极管型号: | APT30S20S |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | HIGH VOLTAGE SCHOTTKY DIODE |
文件: | 总4页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1
2
1- Cathode
2- Anode
D3PAK
APT30S20B
APT30S20S
200V 45A
200V 45A
Back of Case -Cathode
1
2
2
1
HIGH VOLTAGE SCHOTTKY DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Parallel Diode
• Ultrafast Recovery Times
• Low Losses
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Soft Recovery Characteristics
• Low Noise Switching
• Cooler Operation
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Low Forward Voltage
• Higher Reliability Systems
• Uninterruptible Power Supply (UPS)
• 48 Volt Output Rectifiers
• High Speed Rectifiers
• High Blocking Voltage
• Low Leakage Current
• Increased System Power
Density
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT30S20B_S
Symbol Characteristic / Test Conditions
UNIT
VR
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 125°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Operating and StorageTemperature Range
Lead Temperature Case for 10 Sec.
200
Volts
VRWM
IF(AV)
IF(RMS)
IFSM
45
121
Amps
320
TJ,TSTG
-55 to 150
300
°C
TL
EVAL
mJ
Avalanche Energy (2A, 15mH)
30
STATIC ELECTRICAL CHARACTERISTICS
Symbol
MIN
TYP
.80
.91
.67
MAX
UNIT
IF = 30A
.85
IF = 60A
VF
Forward Voltage
Volts
IF = 30A, TJ = 125°C
VR = VR Rated
VR = VR Rated, TJ = 125°C
0.5
15
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
mA
pF
149
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT30S20B_S
Test Conditions
MIN
TYP
MAX
UNIT
trr
ns
Reverse Recovery Time
-
-
-
-
-
-
-
-
-
55
188
6
IF = 30A, diF/dt = -200A/µs
VR = 133V, TC = 25°C
Qrr
nC
Amps
ns
Reverse Recovery Charge
IRRM
-
-
Maximum Reverse Recovery Current
trr
Qrr
97
448
9
Reverse Recovery Time
IF = 30A, diF/dt = -200A/µs
VR = 133V, TC = 125°C
nC
Amps
ns
Reverse Recovery Charge
IRRM
trr
Maximum Reverse Recovery Current
66
963
24
Reverse Recovery Charge
IF = 30A, diF/dt = -700A/µs
VR = 133V, TC = 125°C
Qrr
nC
Reverse Recovery Charge
IRRM
Amps
Maximum Reverse Recovery Current
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
.58
40
UNIT
RθJC
RθJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
°C/W
0.22
5.9
oz
g
WT
Package Weight
10
lb•in
N•m
Torque Maximum Mounting Torque
1.1
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.3
0.2
Note:
t
1
t
2
t
0.1
0
1
/
t
Duty Factor D =
Peak T = P x Z
2
+ T
0.1
J
DM θJC
C
SINGLE PULSE
10-3
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp(°C)
0.250 °C/W
0.330 °C/W
0.00518 J/°C
0.139 J/°C
Power
(watts)
Case temperature(°C)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
APT30S20B_S
TYPICAL PERFORMANCE CURVES
100
120
100
80
T
= 125°C
= 133V
J
60A
T
= 25°C
J
V
R
90
80
70
60
50
40
30
20
30A
15A
T
= 150°C
J
60
40
T
= 125°C
J
20
0
10
0
T
= -55°C
J
0
0.2
0.4
0.6
0.8
1
1.2
0
200
400
600
800
V , ANODE-TO-CATHODE VOLTAGE (V)
-di /dt, CURRENT RATE OF CHANGE(A/µs)
F
F
Figure 2. Forward Current vs. Forward Voltage
Figure 3. Reverse Recovery Time vs. Current Rate of Change
1800
1600
1400
1200
1000
800
35
T
= 125°C
= 133V
J
T
= 125°C
= 133V
J
V
R
V
R
30
25
20
15
10
5
60A
60A
30A
600
30A
15A
400
15A
200
0
0
0
200
400
600
800
0
200
400
600
800
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.4
140
1.2
120
100
80
Q
rr
t
rr
1.0
0.8
0.6
0.4
0.2
0.0
I
RRM
t
rr
60
Q
rr
40
20
Duty cycle = 0.5
T
= 150°C
J
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Dynamic Parameters vs. Junction Temperature
2500
2000
1500
1000
500
0
.3
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 8. Junction Capacitance vs. Reverse Voltage
APT30S20B_S
V
r
diF/dt Adjust
+18V
0V
APT20M36BLL
D.U.T.
t
Q
/
30µH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse ecovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
R
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 10, Diode Reverse Recovery Waveform and Definitions
D3PAK Package Outline
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
13.30 (.524)
13.60 (.535)
1.49 (.059)
2.49 (.098)
16.05 (.632)
1.00 (.039)
1.15 (.045)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.65 (.026)
4.50 (.177) Max.
1.20 (.047)
1.40 (.055)
0.020 (.001)
0.250 (.010)
1.90 (.075)
2.10 (.083)
2.40 (.094)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
2.70 (.106)
1.15 (.045)
1.45 (.057)
19.81 (.780)
20.32 (.800)
2.70 (.106)
2.90 (.114)
(Base of Lead)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
(2 Plcs.)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
2.21 (.087)
2.59 (.102)
Anode
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关型号:
APT30S20SG
Rectifier Diode, Schottky, 1 Phase, 1 Element, 45A, 200V V(RRM), Silicon, D3PAK-3
MICROSEMI
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