APT5010B2FLL_04 [ADPOW]
POWER MOS 7 FREDFET; 功率MOS 7 FREDFET
| 型号： | APT5010B2FLL_04 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 FREDFET |
| 文件： | 总5页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5010B2FLL
APT5010LFLL
500V 46A 0.100Ω
R
B2FLL
POWER MOS 7 FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
D
S
G
• Popular T-MAX™ or TO-264 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5010B2FLL_LFLL
UNIT
VDSS
ID
Drain-Source Voltage
500
46
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
184
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
520
PD
4.0
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
50
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
1600
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 23A)
0.100
250
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT5010B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
Ciss
V
= 0V
Input Capacitance
4360
895
60
GS
V
= 25V
Coss
Crss
Qg
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
95
GS
V
= 250V
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
24
I
= 46A @ 25°C
D
50
RESISTIVESWITCHING
11
V
= 15V
GS
15
V
= 250V
DD
td(off)
25
Turn-off Delay Time
Fall Time
I
= 46A@ 25°C
D
tf
R
= 0.6Ω
3
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
545
510
845
595
Turn-on Switching Energy
V
= 333V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 46A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 333V V = 15V
GS
DD
Turn-off Switching Energy
I
= 46A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
46
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
184
1.3
15
2
(VGS = 0V, IS = -46A)
Volts
V/ns
dv
5
dv
/
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -46A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
600
trr
ns
µC
Reverse Recovery Charge
(IS = -46A, di/dt = 100A/µs)
2.28
6.41
15.7
23.6
Qrr
Peak Recovery Current
(IS = -46A, di/dt = 100A/µs)
IRRM
Amps
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.25
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 1.51mH, R = 25Ω, Peak I = 46A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 46A
/
≤ 700A/µs
V
R ≤ 500V T ≤ 150°C
dt
S
D
J
3 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
0.30
0.9
0.25
0.20
0.7
0.15
0.5
Note:
t
1
0.3
0.10
t
2
0.1
0.05
t
1
Duty Factor D =
/
t
2
0.05
0
SINGLEPULSE
Peak T = P
x Z + T
J
DM
θJC C
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT5010B2FLL_LFLL
120
100
80
15 &10V
8V
RC MODEL
Junction
temp. (°C)
7.5V
0.0131
0.0789
0.0811
0.230
0.00266F
0.00584F
0.0796F
0.460F
7V
60
Power
(watts)
6.5V
40
20
0
6V
5.5V
Case temperature. (°C)
0
V
5
10
15
20
25
30
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.2
100
V
> I (ON) x
DS
R
(ON)MAX.
DS
D
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
90
80
70
60
50
40
30
20
NORMALIZED TO
1.15
V
= 10V @ 23A
GS
1.1
1.05
1.0
V
=10V
GS
V
=20V
GS
T
= +125°C
J
T
= -55°C
J
0.95
0.9
T
= +25°C
J
10
0
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 23A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT5010B2FLL_LFLL
184
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100µS
1,000
C
oss
1mS
10
100
10
10mS
T
=+25°C
C
C
rss
T =+150°C
J
SINGLEPULSE
1
16
12
1
V
10
100
500
0
V
10
20
30
40
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
I
= 46A
D
100
V
=100V
DS
T =+150°C
J
V
=250V
DS
T =+25°C
J
8
4
0
V
=400V
DS
10
1
0.3
V
0
20
40
60
80
100 120 140
Q ,TOTALGATECHARGE(nC)
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
80
100
V
= 330V
DD
= 5Ω
R
T
90
80
70
60
50
40
30
20
t
G
d(off)
70
= 125°C
J
L = 100µH
60
V
= 330V
DD
= 5Ω
50
40
30
20
R
T
G
t
= 125°C
f
J
L = 100µH
t
r
t
d(on)
10
0
10
0
10
20
30
40
(A)
50
60
70
10
20
30
40
(A)
50
60
70
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
1500
1200
900
V
I
= 330V
V
= 330V
DD
= 46A
DD
= 5Ω
R
T
D
G
T
= 125°C
= 125°C
J
J
2000
1500
1000
500
0
L = 100µH
EON includes
L = 100µH
EON includes
E
E
diode reverse recovery.
off
on
diode reverse recovery.
E
on
600
300
0
E
off
10
20
30
40
(A)
50
60
70
0
5
10 15 20 25 30 35 40 45 50
I
D
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT5010B2FLL_LFLL
Gate Voltage
90%
10 %
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
t
d(off)
d(on)
t
Drain Voltage
r
Drain Current
Drain Voltage
90%
90%
t
f
5 %
5 %
10%
Drain Current
10 %
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
5.31 (.209)
4.60 (.181)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号：
APT5010B2LC
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
ADPOW
APT5010B2LL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW
APT5010B2LLG
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3
MICROSEMI
APT5010B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT5010B2VFRG
Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3
MICROSEMI
APT5010B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT5010B2VRG
Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TMAX-3
MICROSEMI
APT5010JFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
ADPOW
©2020 ICPDF网 联系我们和版权申明