APT5014BLL [ADPOW]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET
| 型号： | APT5014BLL |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5014BLL
APT5014SLL
500V 35A 0.140W
TM
BLL
POWER MOS 7
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D3PAK
TO-247
SLL
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5014
500
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
35
Amps
Volts
1
IDM
Pulsed Drain Current
140
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
400
PD
3.2
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
32
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
35
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.140
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
250
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5014 BLL - SLL
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
3400
700
53
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
85
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
22
ID = ID[Cont.] @ 25°C
39
td(on)
tr
td(off)
tf
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6W
15
12
Turn-off Delay Time
Fall Time
39
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
35
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
140
1.3
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
510
Q rr
10.2
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.31
40
UNIT
RqJC
RqJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L =2.12mH, R = 25W, Peak I = 35A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
D3PAKPackageOutline
TO-247 Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
5.31 (.209)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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