APT5020 [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
APT5020
元器件型号: APT5020
生产厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述和应用:

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
功率MOS V是新一代高压N沟道增强型功率MOSFET 。

高压
PDF文件: 总4页 (文件大小:66K)
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型号参数:APT5020参数

APT5020AVR

Power Field-Effect Transistor, 22A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

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0 ADPOW

APT5020BLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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82 ADPOW

APT5020BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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249 ADPOW

APT5020BN-BUTT

Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 MICROSEMI

APT5020BNF

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247AD

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32 ETC

APT5020BNF-BUTT

Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT5020BNF-BUTT

28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT5020BNF-GULLWING

28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT5020BNFR

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247AD

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30 ETC

APT5020BN-GULLWING

Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT5020BN-GULLWING

28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT5020BNR

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247AD

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85 ETC

APT5020BNR-BUTT

Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT5020BNR-BUTT

28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT5020BNR-GULLWING

28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI