APT5510JFLL [ADPOW]
POWER MOS 7 FREDFET; 功率MOS 7 FREDFET
| 型号： | APT5510JFLL |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 FREDFET |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5510JFLL
550V 44A 0.100Ω
R
POWER MOS 7 FREDFET
S
S
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
G
SOT-227
"UL Recognized"
ISOTOP®
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
D
S
G
• Popular SOT-227 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5510JFLL
UNIT
VDSS
ID
Drain-Source Voltage
Volts
550
44
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
176
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
463
Watts
W/°C
PD
3.70
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
44
1
EAR
EAS
35
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
550
44
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 22A)
Ohms
µA
0.100
250
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT5510JFLL
DYNAMIC CHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
Ciss
V
= 0V
Input Capacitance
5823
1124
81
GS
V
= 25V
Coss
pF
Output Capacitance
DS
f = 1 MHz
Crss
Qg
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
124
34
GS
V
= 275V
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 49A @ 25°C
D
64
RESISTIVESWITCHING
16
V
= 15V
GS
12
V
= 275V
DD
td(off)
33
Turn-off Delay Time
Fall Time
I
= 49A @ 25°C
D
tf
R
= 0.6Ω
5
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
697
577
Turn-on Switching Energy
V
= 367V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 49A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
1025
664
V
= 367V V = 15V
GS
DD
Turn-off Switching Energy
I
= 49A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
44
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
176
1.3
15
2
VSD
Volts
V/ns
(VGS = 0V, IS = -44A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -44A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
600
trr
ns
µC
Reverse Recovery Charge
(IS = -44A, di/dt = 100A/µs)
1.9
5.7
15
Qrr
Peak Recovery Current
(IS = -44A, di/dt = 100A/µs)
IRRM
Amps
23
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.27
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 2.58mH, R = 25Ω, Peak I = 44A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 44A
/
≤ 700A/µs
V
R ≤ V
T ≤ 150°C
J
dt
S
D
DSS
3 See MIL-STD-750 Method 3471
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.30
0.9
0.25
0.7
0.5
0.3
0.20
0.15
0.10
Note:
t
1
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
0.05
0
0.1
J
DM θJC
C
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT5510JFLL
140
120
V
=15 & 10V
RC MODEL
GS
Junction
temp. ( ”C)
7.5V
100
0.0409
0.0246F
0.406F
148F
7V
80
60
40
20
0
Power
0.225
6.5V
(Watts)
6V
0.00361
5.5V
5V
Case temperature
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
140
1.40
NORMALIZED TO
V
> I (ON) x
R
(ON)MAX.
DS
DS
D
V
= 10V
@
24.5A
250µSEC. PULSE TEST
GS
120
100
80
60
40
20
0
@ <0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
V
=10V
GS
T
= +125°C
= +25°C
J
T
= -55°C
J
T
V
=20V
J
GS
0.90
0.80
0
2
4
6
8
10
12
0
20
40
60
80
100
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
45
40
35
30
25
20
15
10
05
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 24.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT5510JFLL
182
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100µS
C
1,000
100
10
oss
rss
10
1mS
C
10mS
T
=+25°C
C
J
T =+150°C
SINGLEPULSE
1
1
10
100
550
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
16
I
= 49A
D
100
V
=110V
12
DS
T =+150°C
J
T =+25°C
J
V
=275V
DS
V
=440V
DS
8
10
4
0
1
0
40
80
120
160
200
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
100
100
V
= 367V
DD
= 5Ω
t
d(off)
R
T
G
= 125°C
80
80
60
40
J
t
f
L = 100µH
V
= 367V
DD
= 5Ω
60
40
R
T
G
= 125°C
J
L = 100µH
20
0
20
0
t
r
t
d(on)
0
20
40
(A)
60
80
0
20
40
(A)
60
80
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000
1500
3000
V
= 367V
DD
= 5Ω
R
T
G
2500
2000
1500
1000
= 125°C
E
J
E
off
on
L = 100µH
EON includes
diode reverse recovery.
E
on
1000
500
0
V
I
= 367V
DD
= 49A
D
T
= 125°C
J
500
0
L = 100µH
EON includes
E
off
diode reverse recovery.
0
10
20
30 40
(A)
50
60
70 80
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT5510JFLL
Gate Voltage
10 %
90%
Gate Voltage
Drain Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
t
d(on)
Drain Current
Drain Voltage
90%
90%
t
r
t
f
5 %
10%
0
10 %
Drain Current
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60B
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227(ISOTOP®)PackageOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
Gate
相关型号：
APT5510LFLL
Power Field-Effect Transistor, 49A I(D), 550V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
APT5510LFLLG
Power Field-Effect Transistor, 49A I(D), 550V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明