APT5510LFLL [MICROSEMI]
Power Field-Effect Transistor, 49A I(D), 550V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN;
| 型号： | APT5510LFLL |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 49A I(D), 550V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5510B2FLL
APT5510LFLL
550V 49A 0.100Ω
R
B2FLL
POWER MOS 7 FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LFLL
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular T-MAX™ or TO-264 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5510
550
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
49
Amps
Volts
1
IDM
Pulsed Drain Current
196
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
568
Watts
W/°C
PD
4.55
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
49
1
EAR
EAS
35
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
550
49
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 24.5A)
Ohms
µA
0.100
250
Zero Gate Voltage Drain Current (VDS = 550, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 440, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT5510B2FLL-LFLL
DYNAMIC CHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
Ciss
V
= 0V
Input Capacitance
5823
1124
81
GS
V
= 25V
Coss
Crss
Qg
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
124
34
GS
V
= 275V
DD
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
I
= 49A @ 25°C
D
64
RESISTIVESWITCHING
16
V
= 15V
GS
12
V
= 275V
DD
td(off)
33
Turn-off Delay Time
Fall Time
I
= 49A @ 25°C
D
tf
R
= 0.6Ω
5
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
697
577
Turn-on Switching Energy
V
= 367V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 49A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
1025
664
V
= 367V V = 15V
GS
DD
Turn-off Switching Energy
I
= 49A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
49
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
196
1.3
15
2
Volts
V/ns
(VGS = 0V, IS = -49A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -49A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
260
600
trr
ns
µC
Reverse Recovery Charge
(IS = -49A, di/dt = 100A/µs)
1.9
5.7
15
Qrr
Peak Recovery Current
(IS = -49A, di/dt = 100A/µs)
IRRM
Amps
23
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.22
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 2.08mH, R = 25Ω, Peak I = 49A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -I 49A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.25
0.9
0.20
0.7
0.15
Note:
0.5
0.10
t
1
0.3
t
2
t
0.05
1
Duty Factor D =
/
t
2
0.1
Peak T = P
x Z + T
J
DM
θJC C
0.05
SINGLEPULSE
0
10-5
10-4
10-3
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
10-2
10-1
1.0
Typical Performance Curves
APT5510B2FLL-LFLL
140
120
V
=15 & 10V
RC MODEL
GS
7.5V
7V
Junction
temp. ( ”C)
100
0.0144
0.00575F
0.0186F
0.278F
80
60
40
20
0
Power
0.0763
(Watts)
6.5V
6V
0.130
5.5V
5V
Case temperature
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
140
1.40
NORMALIZED TO
V
> I (ON) x
DS
R
(ON)MAX.
DS
D
V
= 10V
@
24.5A
250µSEC. PULSE TEST
GS
120
100
80
60
40
20
0
@ <0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
V
=10V
GS
T
= +125°C
= +25°C
J
T
= -55°C
J
T
V
=20V
J
GS
0.90
0.80
0
2
4
6
8
10
12
0
20
40
60
80
100
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
50
40
30
20
1.15
1.10
1.05
1.00
0.95
10
0
0.90
0.85
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 24.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT5510B2FLL-LFLL
197
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
C
1,000
100
10
oss
rss
100µS
10
1mS
C
T
=+25°C
C
10mS
T =+150°C
J
SINGLEPULSE
1
1
10
100
550
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
16
I
= 49A
D
100
V
=110V
12
DS
T =+150°C
J
T =+25°C
J
V
=275V
DS
V
=440V
DS
8
10
4
0
1
0
40
80
120
160
200
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
100
100
V
= 367V
DD
= 5Ω
t
d(off)
R
T
G
= 125°C
80
80
60
40
J
t
f
L = 100µH
V
= 367V
DD
= 5Ω
60
40
R
T
G
= 125°C
J
L = 100µH
20
0
20
0
t
r
t
d(on)
0
20
40
(A)
60
80
0
20
40
(A)
60
80
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000
1500
3000
V
= 367V
DD
= 5Ω
R
T
G
2500
2000
1500
1000
= 125°C
E
J
E
off
on
L = 100µH
EON includes
diode reverse recovery.
E
on
1000
500
0
V
I
= 367V
DD
= 49A
D
T
= 125°C
J
500
0
L = 100µH
EON includes
E
off
diode reverse recovery.
0
10
20
30 40
(A)
50
60
70 80
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT5510B2FLL-LFLL
Gate Voltage
10 %
90%
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
t
d(on)
Drain Voltage
Drain Current
Drain Voltage
90%
90%
t
r
t
f
5 %
10%
0
10 %
Drain Current
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60B
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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