APT6015 [ADPOW]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
| 型号： | APT6015 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT6015B2VR
600V 38A 0.150Ω
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
D
S
• New T-MAX™ Package
(Clip-mounted TO-247 Package)
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT6015B2VR
UNIT
VDSS
ID
Drain-Source Voltage
600
38
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
152
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
520
PD
W/°C
4.16
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
38
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
Characteristic / Test Conditions
MIN
600
38
TYP
MAX
UNIT
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
0.150
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 557 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
APT6015B2VR
Symbol
Ciss
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
Input Capacitance
7500
900
320
315
45
9000
1260
480
475
70
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
V
DS = 25V
pF
f = 1 MHz
Qg
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID[Cont.] @ 25°C
125
15
190
30
td(on)
tr
td(off)
tf
VGS = 15V
VDD = 0.5 VDSS
13
26
ID = ID[Cont.] @ 25°C
RG = 0.6Ω
Turn-off Delay Time
Fall Time
45
70
5
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
38
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
152
1.3
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
690
Q rr
15.9
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.24
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 3.46mH, R = 25Ω, Peak I = 38A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
t
1
0.005
0.01
t
2
SINGLE PULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT6015B2VR
100
80
60
40
20
0
100
80
60
40
20
0
V
=6V, 7V, 10V & 15V
GS
5.5V
V
=6V, 7V, 10V & 15V
GS
5.5V
5V
5V
4.5V
4.5V
4V
4V
0
50
100
150
200
250
300
0
V
4
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
8
12
16
20
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
100
80
60
40
20
0
1.6
T
= -55°C
J
NORMALIZED TO
V
= 10V
@
0.5 I [Cont.]
D
T
= +25°C
GS
J
T
= +125°C
1.4
1.2
1.0
0.8
J
V
> I (ON) x
R (ON)MAX.
DS
250µSEC. PULSE TEST
DS
D
V
=10V
GS
@ <0.5 % DUTY CYCLE
V
=20V
GS
T
= +125°C
= +25°C
J
T
T
= -55°C
J
J
0
V
2
4
6
8
0
20
40
60
80
100
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
40
1.15
1.10
1.05
1.00
0.95
0.90
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
= 0.5
I
[Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT6015B2VR
200
100
50
30,000
10µS
OPERATION HERE
LIMITED BY R (ON)
DS
100µS
C
iss
10,000
5,000
1mS
10
5
C
oss
10mS
1,000
500
C
rss
100mS
DC
1
T
=+25°C
=+150°C
C
.5
T
J
SINGLE PULSE
.1
100
1
V
5
10
50 100
600
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
200
I
= I [Cont.]
D
D
100
V
=120V
DS
=300V
T
=+150°C
T =+25°C
J
J
V
DS
50
V
=480V
DS
10
5
4
0
1
0
100
g
200
300
400
500
600
0
V
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
5
T-MAX™ Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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