APT6030SVR [ADPOW]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。型号: | APT6030SVR |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
文件: | 总4页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
APT6030SVRG
Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
APT6032AVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6033BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6033BN-BUTT
22A, 600V, 0.33ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
APT6033BN-GULLWING
Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6033BN-GULLWING
22A, 600V, 0.33ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
APT6033BNR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247ADWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ETC
APT6035
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6035AN
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6035AVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6035BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6035BN-BUTT
19A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
APT6035BN-GULLWING
Power Field-Effect Transistor, 19A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6035BN-GULLWING
19A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
APT6035BNR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 19A I(D) | TO-247ADWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ETC
APT6035BVFR
POWER MOS V FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6035BVFRG
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
APT6035BVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT6035BVR
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
APT6035BVRG
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
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