APT60M75L2LL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。
APT60M75L2LL
型号: APT60M75L2LL
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。

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APT60M75L2LL  
600V 73A 0.075W  
TM  
POWER MOS 7  
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)  
and Qg. Power MOS 7TM combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
TO-264  
Max  
D
S
• Lower Input Capacitance  
• Increased Power Dissipation  
• Lower Miller Capacitance • Easier To Drive  
G
• Lower Gate Charge, Qg  
MAXIMUM RATINGS  
• Popular TO-264 MAX Package  
All Ratings: T = 25°C unless otherwise specified.  
C
APT60M75L2LL  
UNIT  
Symbol Parameter  
VDSS  
ID  
Drain-Source Voltage  
Volts  
600  
73  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
292  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
±40  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
890  
Watts  
W/°C  
PD  
7.12  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
73  
1
EAR  
EAS  
50  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
3200  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
BVDSS  
ID(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
Volts  
600  
73  
2
On State Drain Current  
(VDS > ID(on) x RDS(on) Max, VGS = 10V)  
Amps  
2
RDS(on)  
Drain-Source On-State Resistance  
(VGS = 10V, 0.5 ID[Cont.])  
Ohms  
µA  
0.075  
100  
500  
±100  
5
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 5mA)  
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
Chemin de Magret  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
EUROPE  
DYNAMIC CHARACTERISTICS  
APT60M75L2LL  
MIN  
TYP  
MAX  
UNIT  
Symbol  
Ciss  
Coss  
Crss  
Qg  
Characteristic  
Test Conditions  
Input Capacitance  
9580  
1710  
108  
220  
51  
VGS = 0V  
VDS = 25V  
f = 1 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
pF  
3
VGS = 10V  
Total Gate Charge  
VDD = 0.5 VDSS  
Qgs  
Qgd  
td(on)  
tr  
nC  
ns  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
ID = ID[Cont.] @ 25°C  
98  
VGS = 15V  
VDD = 0.5 VDSS  
ID = ID[Cont.] @ 25°C  
RG = 0.6W  
23  
19  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
53  
8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Symbol  
IS  
MIN  
TYP  
MAX  
73  
Characteristic / Test Conditions  
UNIT  
Continuous Source Current (Body Diode)  
Amps  
1
ISM  
292  
1.3  
Pulsed Source Current  
(Body Diode)  
2
VSD  
t rr  
Diode Forward Voltage (VGS = 0V, IS = -ID[Cont.])  
Volts  
ns  
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)  
857  
Q rr  
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)  
25.9  
µC  
dv  
/
5
Peak Diode Recovery dv  
/
V/ns  
8
dt  
dt  
THERMAL CHARACTERISTICS  
Symbol Characteristic  
MIN  
TYP  
MAX  
0.14  
40  
UNIT  
RqJC  
RqJA  
Junction to Case  
°C/W  
Junction to Ambient  
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction  
temperature.  
See MIL-STD-750 Method 3471  
Starting T = +25°C, L = 1.20mH, R = 25W, Peak I = 73A  
j
G
L
dv  
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%  
/
numbers reflect the limitations of the test circuit rather than the  
di  
dt  
device itself.  
I
S £ -I  
/
£ 700A/µs  
VR £ V  
T £ 150°C  
J
dt  
D Cont.  
[
DSS  
]
APT Reserves the right to change, without notice, the specifications and information contained herein.  
TO-264 MAXTM(L2) Package Outline  
4.60 (.181)  
5.21 (.205)  
19.51 (.768)  
20.50 (.807)  
1.80 (.071)  
2.01 (.079)  
5.79 (.228)  
6.20 (.244)  
25.48 (1.003)  
26.49 (1.043)  
2.29 (.090)  
2.69 (.106)  
2.29 (.090)  
2.69 (.106)  
19.81 (.780)  
21.39 (.842)  
Gate  
Drain  
Source  
0.48 (.019)  
0.84 (.033)  
2.59 (.102)  
3.00 (.118)  
0.76 (.030)  
1.30 (.051)  
2.79 (.110)  
3.18 (.125)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
APT's devices are covered by one or more of the following U.S.patents: 4,895,810  
5,256,583  
5,045,903  
4,748,103  
5,089,434  
5,283,202  
5,182,234  
5,231,474  
5,019,522 5,262,336  
5,434,095 5,528,058  

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