APT60M75L2LL [ADPOW]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。
| 型号： | APT60M75L2LL |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT60M75L2LL
600V 73A 0.075W
TM
POWER MOS 7
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-264
Max
D
S
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Popular TO-264 MAX Package
All Ratings: T = 25°C unless otherwise specified.
C
APT60M75L2LL
UNIT
Symbol Parameter
VDSS
ID
Drain-Source Voltage
Volts
600
73
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
292
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
890
Watts
W/°C
PD
7.12
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
73
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
600
73
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.075
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
APT60M75L2LL
MIN
TYP
MAX
UNIT
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Test Conditions
Input Capacitance
9580
1710
108
220
51
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
pF
3
VGS = 10V
Total Gate Charge
VDD = 0.5 VDSS
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID[Cont.] @ 25°C
98
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6W
23
19
td(off)
tf
Turn-off Delay Time
Fall Time
53
8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
TYP
MAX
73
Characteristic / Test Conditions
UNIT
Continuous Source Current (Body Diode)
Amps
1
ISM
292
1.3
Pulsed Source Current
(Body Diode)
2
VSD
t rr
Diode Forward Voltage (VGS = 0V, IS = -ID[Cont.])
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
857
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
25.9
µC
dv
/
5
Peak Diode Recovery dv
/
V/ns
8
dt
dt
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.14
40
UNIT
RqJC
RqJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 1.20mH, R = 25W, Peak I = 73A
j
G
L
dv
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
S £ -I
/
£ 700A/µs
VR £ V
T £ 150°C
J
dt
D Cont.
[
DSS
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522 5,262,336
5,434,095 5,528,058
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