APT8020B2LL_04 [ADPOW]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。型号: | APT8020B2LL_04 |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
文件: | 总5页 (文件大小:160K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APT8020B2LL
APT8020LLL
800V 38A 0.200Ω
B2LL
R
POWER MOS 7 MOSFET
T-MAX™
TO-264
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
LLL
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
G
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT8020B2LL_LLL
UNIT
VDSS
ID
Drain-Source Voltage
800
38
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
152
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
694
PD
5.56
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
38
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3000
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 19A)
0.200
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT8020B2LL_LLL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
5200
1000
190
195
27
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
GS
V
= 400V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
I
= 38A @ 25°C
D
130
12
RESISTIVESWITCHING
V
= 15V
GS
14
V
= 400V
DD
ns
µJ
I
= 38A @ 25°C
td(off)
39
Turn-off Delay Time
Fall Time
D
R
= 0.6Ω
G
tf
9
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
875
825
1450
985
V
= 533V, V = 15V
GS
DD
I
= 38A, R = 5Ω
Turn-off Switching Energy
D
G
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 533V, V = 15V
GS
DD
I
= 38A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
IS
38
152
1.3
Continuous Source Current (Body Diode)
Amps
1
ISM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -38A)
Volts
ns
Reverse Recovery Time (IS = -38A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -38A, dlS/dt = 100A/µs)
920
Q rr
µC
20.7
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
10
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.18
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 4.16mH, R = 25Ω, Peak I = 38A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 38A
/
≤ 700A/µs
V
R ≤ 800 T ≤ 150°C
J
dt
S
D
3 See MIL-STD-750 Method 3471
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.20
0.9
0.16
0.7
0.12
0.5
Note:
0.08
t
1
0.3
t
2
0.04
SINGLEPULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
0.1
2
+ T
J
DM θJC
C
0.05
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT8020B2LL_LLL
100
80
RC MODEL
Junction
temp. (°C)
8V
7V
V
=15 &10 V
GS
0.0271
0.0656
0.0860
0.00899F
0.0202F
0.293F
60
6.5V
Power
(watts)
40
6V
20
0
5.5V
5V
Case temperature. (°C)
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.40
120
NORMALIZED TO
V
> I (ON) x
R
(ON)MAX.
DS
DS
D
V
= 10V
@
I
= 19A
GS
D
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
100
80
V
=10V
GS
60
T
= +125°C
J
40
V
=20V
GS
T
= -55°C
J
T
= +25°C
J
0.90
0.80
20
0
0
2
4
6
8
10
0
10
20
30
40
50 60 70
80
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
40
35
30
25
20
15
10
0.95
0.90
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 19A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
APT8020B2LL_LLL
152
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
50
100µS
10
1,000
C
C
oss
1mS
T
=+25°C
C
J
T =+150°C
rss
10mS
SINGLEPULSE
10
1
16
12
100
1
V
100
800
0
10
20
30
40
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
I
= 38A
D
100
V
=160V
T =+150°C
J
DS
T =+25°C
J
8
V
=400V
V
=640V
DS
DS
10
4
0
1
0
50
100
150
200
250
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
200
100
V
= 533V
DD
= 5Ω
180
R
T
t
G
d(off)
= 125°C
J
160
140
80
60
40
L = 100µH
V
= 533V
t
DD
= 5Ω
f
R
T
120
100
80
G
= 125°C
J
L = 100µH
t
r
60
40
20
0
t
d(on)
20
0
10
20
30
40
50
60
10
20
30
40
50
60
I
(A)
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
6000
5000
4000
3000
2000
V
= 533V
V
I
= 533V
DD
DD
= 38A
R
= 5Ω
G
D
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
E
off
EON includes
EON includes
diode reverse recovery.
diode reverse recovery.
E
E
off
on
E
on
500
0
1000
0
10
20
30
40
50
60
0
5
10 15 20 25 30 35 40 45 50
I
D
(A)
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT8020B2LL_LLL
90%
GateVoltage
10%
GateVoltage
T 125°C
T 125°C
J
J
td(off)
td(on)
DrainVoltage
90%
tf
tr
DrainCurrent
DrainVoltage
90%
10%
10%
0
5%
5%
DrainCurrent
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT30DF100
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
5.31 (.209)
4.60 (.181)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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