APTC80AM75SC [ADPOW]
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module; 相脚系列和碳化硅二极管并联超级结MOSFET功率模块
| 型号： | APTC80AM75SC |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 文件： | 总7页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTC80AM75SC
Phase leg
VDSS = 800V
Series & SiC parallel diodes
Super Junction
RDSon = 75mꢀ max @ Tj = 25°C
ID = 56A @ Tc = 25°C
MOSFET Power Module
Application
Sꢁ Motor control
Sꢁ Switched Mode Power Supplies
Sꢁ Uninterruptible Power Supplies
Features
Sꢁ
-
-
-
-
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Sꢁ Parallel SiC Schottky Diode
-
-
-
-
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
M5 power connectors
G1
VBUS
0/VBUS
OUT
Sꢁ High level of integration
S1
Benefits
S2
G2
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
800
56
V
Tc = 25°C
Tc = 80°C
ID
A
43
IDM
VGS
Pulsed Drain current
232
±30
75
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
568
24
0.5
670
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 7
APT website – http://www.advancedpower.com
APTC80AM75SC
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1000µA
800
V
VGS = 0V,VDS = 800V Tj = 25°C
100
1000
75
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 800V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
VGS = 10V, ID = 28A
mꢀ
V
VGS = VDS, ID = 4mA
2.1
3
3.9
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±200 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
9015
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
4183
215
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
364
48
VGS = 10V
VBus = 400V
ID = 56A
nC
184
Inductive switching @ 125°C
Td(on)
Tr
Turn-on Delay Time
Rise Time
10
13
83
35
V
GS = 15V
V
Bus = 553V
ns
Td(off) Turn-off Delay Time
Tf
ID = 56A
RG = 1.2Ω
Fall Time
Inductive switching @ 25°C
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy ꢀ
Turn-on Switching Energy
Turn-off Switching Energy ꢀ
583
556
µJ
µJ
V
GS = 15V, VBus = 533V
ID = 56A, RG = 1.2ꢀ
Inductive switching @ 125°C
1020
684
V
GS = 15V, VBus = 533V
ID = 56A, RG = 1.2ꢀ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 60A
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
Tc = 85°C
60
1.1
1.4
0.9
A
1.15
IF = 120A
VF
Diode Forward Voltage
V
IF = 60A
IF = 60A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
24
48
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 133V
di/dt = 400A/µs
IF = 60A
66
Qrr
nC
VR = 133V
di/dt = 400A/µs
300
2 – 7
APT website – http://www.advancedpower.com
APTC80AM75SC
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
50% duty cycle
IF(AV)
Maximum Average Forward Current
Tc = 125°C
Tj = 25°C
Tj = 175°C
30
1.6
2.6
A
1.8
3.0
VF
Diode Forward Voltage
IF = 30A
V
IF = 30A, VR = 600V
di/dt =1600A/µs
QC
Q
Total Capacitive Charge
Total Capacitance
84
nC
pF
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
270
198
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.22
RthJC
Junction to Case
°C/W
V
Series diode
Parallel diode
0.65
0.45
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
3
150
125
100
5
°C
TSTG
TC
Operating Case Temperature
To heatsink
M6
Torque Mounting torque
N.m
g
For terminals M5
2
3.5
280
Wt
Package Weight
Package outline
3 – 7
APT website – http://www.advancedpower.com
APTC80AM75SC
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.2
0.15
0.1
0.05
0
0.9
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
160
140
120
100
80
200
150
100
50
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15&10V
6.5V
6V
5.5V
60
5V
4.5V
4V
40
TJ=25°C
20
TJ=125°C
TJ=-55°C
0
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
60
50
40
30
20
10
0
Normalized to
GS=10V @ 28A
V
VGS=10V
VGS=20V
0.9
0.8
0
25
50
75
100
125
150
20
40
60
80
100 120
TC, Case Temperature (°C)
ID, Drain Current (A)
4 – 7
APT website – http://www.advancedpower.com
APTC80AM75SC
Breakdown Voltage vs Temperature
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 28A
-50
0
50
100
150
-50
0
50
100
150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
1.2
1.1
1.0
0.9
0.8
0.7
100µs
limited by
RDSon
100
10
1
1ms
10ms
100ms
Single pulse
TJ=150°C
0
-50
0
50
100
150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
100000
16
14
12
10
8
ID=56A
TJ=25°C
VDS=160V
Ciss
Coss
Crss
10000
1000
100
VDS=400V
VDS=640V
6
4
2
0
10
0
50 100 150 200 250 300 350 400
0
10
20
30
40
50
V
DS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 7
APT website – http://www.advancedpower.com
APTC80AM75SC
Delay Times vs Current
Rise and Fall times vs Current
50
40
30
20
10
0
100
80
60
40
20
0
td(off)
tf
VDS=533V
VDS=533V
RG=1.2Ω
TJ=125°C
L=100µH
RG=1.2Ω
TJ=125°C
L=100µH
tr
td(on)
20 30 40 50 60 70 80 90
20 30 40 50 60 70 80 90
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
1.6
1.2
0.8
0.4
0
3.5
3
VDS=533V
VDS=533V
ID=56A
RG=1.2Ω
TJ=125°C
L=100µH
Eon
TJ=125°C
L=100µH
Eoff
2.5
2
Eoff
1.5
1
Eon
0.5
0
2.5
5
7.5
10
20
30 40
50
60
70
80
90
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
Operating Frequency vs Drain Current
400
350
300
250
200
150
100
50
VDS=533V
D=50%
RG=1.2Ω
TJ=125°C
TJ=150°C
100
10
1
TJ=25°C
0
10 15 20 25 30 35 40 45 50
0.2
0.6
1
1.4
1.8
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
6 – 7
APT website – http://www.advancedpower.com
APTC80AM75SC
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.45
0.4
0.9
0.35
0.3
0.25
0.2
0.15
0.7
0.5
0.3
0.1
0.05
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
60
50
40
30
20
10
0
1200
900
TJ=25°C
TJ=75°C
600
TJ=75°C
TJ=125°C
TJ=125°C
TJ=175°C
TJ=175°C
300
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
400 600 800 1000 1200 1400 1600
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
2400
2000
1600
1200
800
400
0
1
10
100
1000
VR Reverse Voltage
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
7 – 7
APT website – http://www.advancedpower.com
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