APTM100H35FT3 [ADPOW]
Full - Bridge MOSFET Power Module; 全 - 桥式MOSFET功率模块
| 型号： | APTM100H35FT3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Full - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM100H35FT3
VDSS = 1000V
Full - Bridge
RDSon = 350mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 22A @ Tc = 25°C
Application
13 14
•
•
•
•
Welding converters
Q1
Q3
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
18
19
11
10
22
23
7
8
Features
•
Power MOS 7® FREDFETs
Q2
Q4
32
-
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
4
3
26
27
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
29
30
31
R1
•
•
Kelvin source for easy drive
Very low stray inductance
15
16
-
Symmetrical design
•
•
Internal thermistor for temperature monitoring
High level of integration
28 27 26 25
23 22
20 19 18
29
30
16
Benefits
15
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
31
32
14
13
2
3
4
7
8
10 11
•
•
Low profile
12
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
22
ID
Continuous Drain Current
A
Tc = 80°C
17
IDM
VGS
RDSon
PD
Pulsed Drain current
88
Gate - Source Voltage
±30
420
390
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
25
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1 – 6
APTM100H35FT3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1000V
Tj = 25°C
Tj = 125°C
250
1000
420
5
±100
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 800V
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
VGS = ±30V, VDS = 0V
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
350
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
5.2
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
0.88
0.16
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
186
24
122
18
12
155
40
VGS = 10V
VBus = 500V
ID = 22A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ns
ID = 22A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
Eon
Turn-on Switching Energy X
900
623
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy Y
Turn-on Switching Energy X
Turn-off Switching Energy Y
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
1423
779
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
22
A
(Body diode)
17
1.3
18
VSD
Diode Forward Voltage
VGS = 0V, IS = - 22A
V
V/ns
dv/dt Peak Diode Recovery Z
IS = - 22A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
320
trr
Reverse Recovery Time
ns
VR = 500V
650
diS/dt = 100A/µs
IS = - 22A
3.6
Qrr
Reverse Recovery Charge
µC
VR = 500V
9.72
diS/dt = 100A/µs
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 22A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
APT website – http://www.advancedpower.com
2 – 6
APTM100H35FT3
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case
0.32 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
1.5
V
150
125
100
4.7
°C
TSTG
Storage Temperature Range
Operating Case Temperature
TC
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
110
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
RT
=
T: Thermistor temperature
RT: Thermistor value at T
1
1
T
25/85
exp B
−
T25
Package outline (dimensions in mm)
2 8
1 7
1
12
APT website – http://www.advancedpower.com
3 – 6
APTM100H35FT3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.05
0
0.00001
0.1
0.05
Single Pulse
0.01
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10&8V
7V
6.5V
6V
TJ=25°C
5.5V
5V
TJ=125°C
TJ=-55°C
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
V
DS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
25
20
15
10
5
Normalized to
GS=10V @ 11A
V
VGS=10V
VGS=20V
0.9
0.8
0
0
10
20
30
40
50
60
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4 – 6
APTM100H35FT3
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=11A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
1ms
10
1
Single pulse
TJ=150°C
10ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=22A
TJ=25°C
VDS=200V
VDS=500V
10000
1000
100
Ciss
VDS=800V
6
Coss
4
2
Crss
0
0
50
100
150
200
250
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
5 – 6
APTM100H35FT3
Delay Times vs Current
Rise and Fall times vs Current
80
70
60
50
40
30
20
10
0
180
160
140
120
100
80
60
40
20
0
VDS=670V
RG=5Ω
td(off)
tf
TJ=125°C
L=100µH
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
tr
td(on)
0
10
20
30
40
50
0
10
20
30
40
50
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
3.5
3
2.5
2
VDS=670V
VDS=670V
RG=5Ω
Eon
ID=22A
TJ=125°C
L=100µH
Eoff
TJ=125°C
L=100µH
2.5
2
Eoff
1.5
1
Eon
1.5
1
0.5
0
0.5
0
0
10
20
30
40
50
0
5
10
15
20
25
30
35
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
250
225
200
175
150
125
100
75
ZVS
ZCS
TJ=150°C
TJ=25°C
VDS=670V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
50
25
0
Hard
switching
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
5
8
10
13
15
18
20
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6 – 6
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