APTM20DUM08T [ADPOW]
Power Field-Effect Transistor, 208A I(D), 200V, 0.008ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-12;
| 型号： | APTM20DUM08T |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power Field-Effect Transistor, 208A I(D), 200V, 0.008ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-12 晶体 晶体管 |
| 文件： | 总6页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DUM08TG
VDSS = 200V
Dual common source
RDSon = 8mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 208A @ Tc = 25°C
Application
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
D1
D2
Q1
Q2
Features
•
Power MOS 7® MOSFETs
G1
G2
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
S1
S2
S
Avalanche energy rated
Very rugged
NTC1
NTC2
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
G2
S2
D2
D2
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
D1
S
S1
G1
S2
G2
NTC2
NTC1
•
•
Low profile
RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
200
Unit
VDSS
Drain - Source Breakdown Voltage
V
Tc= 25°C
208
ID
Continuous Drain Current
A
Tc = 80°C
155
IDM
VGS
RDSon
PD
Pulsed Drain current
832
Gate - Source Voltage
±30
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
10
Tc = 25°C
781
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
100
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1 – 6
APTM20DUM08TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 200V Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
VGS = 10V, ID = 104A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
150
750
10
5
±150
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
8
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
14.4
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
4.66
0.29
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
280
106
134
32
64
88
VGS = 10V
VBus = 100V
ID = 208A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ns
ID = 208A
RG = 2.5Ω
Tf
Fall Time
116
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5Ω
Eon
Turn-on Switching Energy
1698
1858
1872
1972
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Continuous Source current
Tc = 25°C
Tc = 80°C
208
IS
A
(Body diode)
155
1.3
5
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery X
VGS = 0V, IS = - 208A
V
V/ns
trr
Reverse Recovery Time
360
ns
IS = - 208A, VR = 133V
diS/dt = 200A/µs
Qrr
Reverse Recovery Charge
13.4
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 208A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
APT website – http://www.advancedpower.com
2 – 6
APTM20DUM08TG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case Thermal Resistance
0.16 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
1.5
V
150
125
100
4.7
°C
TSTG
Storage Temperature Range
Operating Case Temperature
TC
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT website – http://www.advancedpower.com
3 – 6
APTM20DUM08TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
Single Pulse
0.01
0.1
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
1400
1200
1000
800
600
400
200
0
600
500
400
300
200
100
0
VGS=15V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
10V
9V
8.5V
8V
7.5V
TJ=25°C
7V
TJ=125°C
6.5V
TJ=-55°C
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
8
9 10
V
DS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
250
RDS(on) vs Drain Current
1.2
1.1
1
Normalized to
GS=10V @ 104A
V
200
150
100
50
VGS=10V
VGS=20V
0.9
0.8
0
0
50
100 150 200 250 300
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4 – 6
APTM20DUM08TG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 104A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1000
100
10
limited by
RDS on
100µs
1ms
10ms
100ms
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
ID=208A
TJ=25°C
VDS=40V
VDS=100V
12
10
8
Ciss
10000
1000
100
Coss
VDS=160V
6
4
Crss
2
0
0
40 80 120 160 200 240 280 320
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
5 – 6
APTM20DUM08TG
Delay Times vs Current
Rise and Fall times vs Current
160
120
100
80
60
40
20
0
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
140
120
100
80
td(off)
tf
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
0
50 100 150 200 250 300 350
0
50 100 150 200 250 300 350
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
5
4
3
2
1
4
3
2
1
0
VDS=133V
ID=208A
TJ=125°C
VDS=133V
Eoff
RG=2.5Ω
TJ=125°C
L=100µH
Eoff
L=100µH
Eon
Eon
Eoff
0
50 100 150 200 250 300 350
0
5
10
15
20
25
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
TJ=150°C
ZVS
TJ=25°C
VDS=133V
ZCS
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
Hard
switching
0
1
25 50 75 100 125 150 175 200
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
ID, Drain Current (A)
V
SD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6 – 6
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