MDS1100 [ADPOW]
1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz; 1100瓦， 50伏特，脉冲航空电子设备在1030兆赫
| 型号： | MDS1100 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDS1100
1100 Watts, 50 Volts
Pulsed Avionics at 1030 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55TU-1
The MDS1100 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1
8750 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
65 V
4.5 V
100 A
Emitter to Base Voltage (BVebo
Collector Current (Ic)
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +200 °C
+200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
Pout
Power Out
F = 1030 MHz, Vcc = 50 Volts 1000
W
Pg
Power Gain
Note 2
8.9
45
dB
%
Collector Efficiency
ηc
RL
Return Loss
11
dB
nS
dB
F = 1030 MHz, Vcc = 50 Volts
Note 2
Tr
Rise Time
100
0.7
Pd
Pulse Droop
VSWR
Load Mismatch Tolerance1
4.0:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE
Emitter to Base Breakdown
Ie = 50 mA
3.5
65
20
V
V
Collector to Emitter Breakdown Ic = 100 mA
DC – Current Gain
Thermal Resistance
Vce = 5V, Ic = 5A
θjc1
°C/W
0.02
NOTES: 1. At rated output power and pulse conditions
2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period, Pin = 130 Watts
Rev B, September 2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
Efficiency vs. Output Power
Gain vs. Output Power
48
46
44
42
40
38
36
34
32
30
9.6
9.4
9.2
9
8.8
8.6
8.4
8.2
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
Pout (W)
Pout (W)
Zin
Zcl
R (ohms)
1.75
jX (ohms)
+j2.37
Zin
Zcl
0.60
-j1.62
Frequency = 1030 MHz, Vcc = 50V, Pin = 130W
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
MDS1100
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
MDS1100
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
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