HMC341LC3BRTR [ADI]
HMC341LC3BRTR;
| 型号： | HMC341LC3BRTR |
| 厂家： | 
ADI |
| 描述： | HMC341LC3BRTR |
| 文件： | 总6页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
Typical Applications
The HMC341LC3B is ideal for:
• Point-to-Point Radios
Features
2.5 dB Noise Figure
13 dB Gain
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
+3V @ 35 mA Supply
50 Ohm Matched Input/Output
RoHS Compliant 3x3 mm SMT Package
Functional Diagram
General Description
The HMC341LC3B is a GaAs PHEMT MMIC Low
Noise Amplifier housed in a leadless RoHS comp-
liant SMT package. Operating from 21 to 29 GHz,
the amplifier provides 13 dB of gain and a noise
figure of 2.5 dB from a single +3V supply. The RF
I/Os are DC blocked and matched to 50 Ohms
requiring no external components. The HMC341LC3B
eliminates the need for wire bonding, allowing the
use of surface mount manufacturing techniques.
Electrical Specifications, TA = +25° C, Vdd = +3V, Idd = 35 mA
Parameter
Min.
Typ.
21 - 24
13.5
0.016
3.25
10
Max.
Min.
Typ.
24 - 26
13
Max.
Min.
9
Typ.
26 - 29
12
Max.
Units
GHz
dB
Frequency Range
Gain
10.5
10
Gain Variation Over Temperature
Noise Figure
0.025
5
0.016
3
0.025
3.5
0.016
2.5
0.025
3
dB/ °C
dB
Input Return Loss
11
9
dB
Output Return Loss
14
10
9
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (Vdd = +3V)
8
8.5
8.5
11.5
19
dBm
dBm
dBm
mA
11
11.5
19
19
35
35
35
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 26
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
Broadband Gain & Return Loss
Gain vs. Temperature
15
16
14
12
S21
S11
S22
5
-5
10
-15
-25
+25C
+85C
-40C
8
6
20
22
24
26
28
30
32
30
30
20
22
24
26
28
30
30
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
+25C
-40C
-5
-5
+85C
-40C
-10
-15
-20
-10
-15
-20
20
22
24
26
28
20
22
24
26
28
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Output IP3 vs. Temperature
10
22
+25C
+85C
-40C
20
18
8
6
4
2
0
16
+25C
+85C
-40C
14
12
10
20
22
24
26
28
20
21
22
23
24
25
26
27
28
29
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 27
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
P1dB vs. Temperature
Psat vs. Temperature
14
14
12
10
8
12
10
8
6
6
+25C
+85C
+25C
+85C
-40C
-40C
4
4
2
2
0
0
20
22
24
26
28
30
20
22
24
26
28
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 25 GHz
Reverse Isolation vs. Temperature
16
0
12
+25C
-10
+85C
Pout
-40C
8
Gain
PAE
4
-20
0
-4
-8
-30
-40
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
20
22
24
26
28
30
INPUT POWER (dBm)
FREQUENCY (GHz)
Gain, Power & Noise Figure
vs. Supply Voltage @ 25 GHz
16
14
12
10
8
Gain
P1dB
6
Psat
Noise Figure
4
2
0
2.75
3.25
3.75
4.25
4.75
5.25
Vdd Supply Voltage (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 28
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
Vdd (Vdc)
Idd (mA)
RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm
+2.7
34
35
38
41
Channel Temperature
175 °C
+3.0
Continuous Pdiss (T= 85 °C)
(derate 5.43 mW/°C above 85 °C)
+4.0
0.489 W
+5.0
Thermal Resistance
(channel to ground paddle)
Note: Amplifier will operate over full voltage ranges shown above.
184 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 29
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1000pF, and 2.2 μF are required.
1
Vdd
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
2, 3, 7-9
N/C
GND
Package bottom has an exposed metal paddle that
must also be connected to RF/DC ground.
4, 6, 10, 12
This pin is AC coupled and matched
to 50 Ohms from 21 - 29 GHz.
5
RFIN
This pin is AC coupled and matched
to 50 Ohms from 21 - 29 GHz.
11
RFOUT
Application Circuit
Component Value
C1
C2
C3
100 pF
1,000 pF
2.2 μF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 30
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
Evaluation PCB
List of Materials for Evaluation PCB 112646 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
Item
Description
J1, J2
J3, J4
C1
SRI K-connector
DC Pin
100 pF capacitor, 0402 pkg.
1,000 pF Capacitor, 0603 pkg.
2.2μF Capacitor, Tantalum
HMC341LC3B Amplifier
C2
C3
U1
[2]
PCB
112647 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 31
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