HMC342 [HITTITE]
GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz; 砷化镓MMIC低噪声放大器， 13 - 25 GHz的
| 型号： | HMC342 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz |
| 文件： | 总6页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
v00.0301
MICROWAVE CORPORATION
Typical Applications
Features
1
The HMC342 is ideal for:
Noise Figure : 3.5 dB
• Microwave Point-to-Point Radios
Gain: 20 dB
• Millimeterwave Point-to-Point Radios
• VSAT & SATCOM
Single Supply : +3V @ 36 mA
Small Size: 1.06 mm x 2.02 mm
Functional Diagram
General Description
The HMC342 chip is a GaAs MMIC Low Noise
Amplifier (LNA) which covers the frequency range
of 13 to 25 GHz. The chip can easily be inte-
grated into Multi-Chip Modules (MCMs) due to its
2
small (2.14 mm ) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3.0V @ 36 mA with a noise figure
of 3.5 dB. All data is with the chip in a 50 ohm
test fixture connected via 0.025 mm (1 mil) diam-
eter wire bonds of minimal length 0.31 mm (<12
mils).
Electrical Specifications,TA = +25° C, Vdd = +3V
Parameter
Min.
16
Typ.
13 - 25
21
Max.
Units
GHz
dB
Frequency Range
Gain
26
.04
4.5
Gain Variation Over Temperature
Noise Figure
.03
3.5
13
dB/°C
dB
Input Return Loss
6
6
dB
Output Return Loss
14
dB
Reverse Isolation
39
1
45
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
5
dBm
dBm
dBm
mA
3
8
8
13
41
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 24
HMC342
v00.0301
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
GaAs MMIC SUB-HARMONICALLY GPaUinMvPs.ETDemMpeIrXaEtuRre @17Vd-d2=5+5GVHz
Gain vs.Temperature @ Vdd = +3V
1
30
25
20
15
10
30
25
20
15
10
+25 C
-55 C
+85 C
+25 C
-55 C
+85 C
12
14
16
18
20
22
24
26
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
FREQUENCY (GHz)
Return Loss @ Vdd = +3V
Return Loss @ Vdd = +5V
0
0
S11
S11
-5
-5
S22
S22
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
12
14
16
18
20
22
24
26
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure
Noise Figure
vs.Temperature @ Vdd = +3V
vs.Temperature @ Vdd = +5V
6
6
5
4
3
2
1
0
5
4
3
2
1
0
+25 C
-55 C
+85 C
+25 C
-55 C
+85 C
12
14
16
18
20
22
24
26
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 25
HMC342
v00.0301
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Gain & Noise Figure
Isolation
vs. Supply Voltage @ 18 GHz
1
4
21.4
21.3
21.2
21.1
21
0
-10
-20
-30
-40
-50
-60
-70
Vdd = +3V
Vdd = +5V
3.8
3.6
3.4
3.2
3
20.9
20.8
2.8
2.5
3
3.5
4
4.5
5
5.5
12
14
16
18
20
22
22
22
24
24
24
26
26
26
Vdd SUPPLY VOLTAGE (Vdc)
FREQUENCY (GHz)
Output P1dB @ Vdd = +3V
Output P1dB @ Vdd = +5V
14
14
12
12
10
8
+25 C
-55 C
+85 C
+25 C
-55 C
+85 C
10
8
6
4
2
0
6
4
2
0
12
14
16
18
20
22
24
26
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 @ Vdd = +3V
Output IP3 @ Vdd = +5V
30
30
+25 C
+25 C
-55 C
-55 C
25
20
15
10
5
25
20
15
10
5
+85 C
+85 C
12
14
16
18
20
22
24
26
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 26
HMC342
v00.0301
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Absolute Maximum Ratings
Outline Drawing
1
Drain Bias Voltage (Vdd)
+5.5 Vdc
NOTES:
RF Input Power (RFin)(Vdd = +3.0 Vdc)
Channel Temperature
0 dBm
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
175 °C
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
Continuous Pdiss (T = 85 °C)
(derate 3.62 mW/°C above 85 °C)
0.326 W
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Thermal Resistance
276 °C/W
(channel to die bottom)
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
RF Input
This pad is AC coupled and matched to 50 Ohm from 13 - 25 GHz
This pad is AC coupled and matched to 50 Ohm from 13 - 25 GHz
2
RF Output
Power supply for the 2-stage amplifier. An external RF bypass capacitor
of 100 - 300 pF is required. The bond length to the capacitor should be
as short as possible. The ground side of the capacitor should be con-
nected to the housing ground.
3
Vdd
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 27
HMC342
v00.0301
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Assembly Diagrams
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 28
HMC342
v00.0301
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Handling Precautions
1
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds
of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as
possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 29
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