HMC7441 [ADI]
HMC7441;
| 型号： | HMC7441 |
| 厂家： | 
ADI |
| 描述： | HMC7441 射频 微波 |
| 文件： | 总11页 (文件大小：577K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Features
Typical Applications
The HMC7441 is ideal for:
Saturated Output Power: +34 dBm @ 25% PAE
High Output IP3: +38 dBm
High Gain: 23 dB
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
DC Supply: +6V @ 1000 mA
No External Matching Required
Die Size: 3.18 x 2.84 x 0.1 mm
• Military & Space
Functional Diagram
General Description
The HMC7441 is a three-stage GaAs pHEMT Power
Amplifier which operates between 27.5 and 31 GHz.
The amplifier provides 23 dB of gain and +34 dBm
of saturated output power at 25% PAE from a 6V
supply. With an excellent output IP3 of +38 dBm, the
HMC7441 is ideal for linear application such as Ka-
band VSAT or high capacity point-to-point or point-
to-multi-point radios demanding +34 dBm of efficient
saturated output power. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration
into Multi-Chip-Modules (MCMs). All data is taken
with the chip in a 50 Ohm test fixture connected via
(1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm
(12 mil) length.
Electrical Specifications, TA = +25° C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +6V, Idd = 1000 mA [1]
Parameter
Min.
Typ.
27.5 - 31
23
Max.
Units
GHz
dB
Frequency Range
Gain
20
Gain Variation Over Temperature
Input Return Loss
0.03
8
dB/ °C
dB
Output Return Loss
8
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
31
34
dBm
dBm
dBm
mA
34
38
Total Supply Current (Idd)
1000
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1000 mA typical.
[2] Measurement taken at +6V @ 1000 mA, Pout / Tone = +28 dBm
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
1
Application Support: Phone: 1-800-ANALOG-D
HMC7441* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
DESIGN RESOURCES
• HMC7441 Material Declaration
• PCN-PDN Information
DOCUMENTATION
• Quality And Reliability
Application Notes
• Symbols and Footprints
• AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
DISCUSSIONS
View all HMC7441 EngineerZone Discussions.
• Broadband Biasing of Amplifiers General Application Note
• MMIC Amplifier Biasing Procedure Application Note
SAMPLE AND BUY
Visit the product page to see pricing options.
• Thermal Management for Surface Mount Components
General Application Note
Data Sheet
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
• HMC7441 Data Sheet
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not
trigger a change to either the revision number or the content of the product data sheet. This dynamic page may be frequently modified.
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
vs. Frequency
30
32
30
28
26
24
22
20
18
16
14
12
10
20
10
0
-10
-20
-30
25
26
27
28
29
30
31
32
33
27
28
29
30
31
32
FREQUENCY (GHz)
FREQUENCY (GHz)
+25 C
+85 C
-55 C
S21
S11
S22
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
-30
-35
-40
27
28
29
30
31
32
27
28
29
30
31
32
FREQUENCY (GHz)
FREQUENCY (GHz)
+25 C
+85 C
-55 C
+25 C
+85 C
-55 C
P1dB vs. Temperature
P1dB vs. Supply Voltage
37
37
35
33
31
29
27
25
35
33
31
29
27
25
27
28
29
30
31
32
27
28
29
30
31
32
FREQUENCY (GHz)
FREQUENCY (GHz)
5.5V
6V
+25C
+85C
-55C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
2
Application Support: Phone: 1-800-ANALOG-D
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Psat vs. Temperature
Psat vs. Supply Voltage
37
37
35
33
31
29
27
25
35
33
31
29
27
25
27
28
29
30
31
32
27
28
29
30
31
32
FREQUENCY (GHz)
FREQUENCY (GHz)
+25 C
+85 C
-55 C
5.5V
6V
P1dB vs. Supply Current (Idd)
Psat vs. Supply Current (Idd)
37
37
35
33
31
29
27
25
35
33
31
29
27
25
27
28
29
30
31
32
27
28
29
30
31
32
FREQUENCY (GHz)
FREQUENCY (GHz)
900 mA
1000 mA
1100 mA
900 mA
1000 mA
1100 mA
Output IP3 vs.
Output IP3 vs.
Temperature, Pout/Tone = +28 dBm
Supply Current, Pout/Tone = +28 dBm
46
46
42
38
34
30
26
42
38
34
30
26
27
28
29
30
31
32
27
28
29
30
31
32
FREQUENCY (GHz)
FREQUENCY (GHz)
900 mA
1000 mA
1100 mA
+25 C
+85 C
-55 C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
3
Application Support: Phone: 1-800-ANALOG-D
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Output IP3 vs.
Output IM3 @ Vdd = +5.5V
Supply Voltage, Pout/Tone = +28 dBm
46
50
45
40
35
30
25
20
15
10
42
38
34
30
26
27
28
29
30
31
32
16
18
20
22
24
26
28
30
32
FREQUENCY (GHz)
Pout/TONE (dBm)
28 GHz
29 GHz
30GHz
31 GHz
5.5V
6V
Output IM3 @ Vdd = +6V
Power Compression @ 27.5 GHz
50
45
40
35
30
25
20
15
10
1900
1775
1650
1525
1400
1275
1150
1025
900
40
35
30
25
20
15
10
5
0
16
18
20
22
24
26
28
30
32
-8 -6 -4 -2
0
2
4
6
8
10 12 14 16
Pout/TONE (dBm)
INPUT POWER (dBm)
Gain
Pout
PAE
28 GHz
29 GHz
30 GHz
31 GHz
Idd
Power Compression @ 29 GHz
Power Compression @ 31 GHz
2300
2125
1950
1775
1600
1425
1250
1075
900
2300
2125
1950
1775
1600
1425
1250
1075
900
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
0
0
-8 -6 -4 -2
0
2
4
6
8
10 12 14 16
-8 -6 -4 -2
0
2
4
6
8
10 12 14 16
INPUT POWER (dBm)
INPUT POWER (dBm)
Pout
Gain
PAE
Pout
Gain
PAE
Idd
Idd
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
4
Application Support: Phone: 1-800-ANALOG-D
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Gain & Power vs. Supply Current
Reverse Isolation vs. Temperature
@ 29 GHz
40
0
-10
-20
-30
-40
-50
-60
-70
-80
35
30
25
20
15
900
950
1000
1050
1100
27
28
29
30
31
32
Idd (mA)
FREQUENCY (GHz)
GAIN(dB)
P1dB(dBm)
Psat(dBm)
+25C
+85C
-55C
Gain & Power vs. Supply Voltage
Power Dissipation
@ 29 GHz
40
10
9
8
7
6
5
4
35
30
25
20
15
-8 -6 -4 -2
0
2
4
6
8
10 12 14 16
5.5
5.6
5.7
5.8
5.9
6
INPUT POWER (dBm)
Vdd (V)
28 GHz
29 GHz
30 GHz
31 GHz
GAIN(dB)
P1dB(dBm)
Psat(dBm)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
5
Application Support: Phone: 1-800-ANALOG-D
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
+6.5V
+24 dBm
175 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Continuous Pdiss (T= 85 °C)
(derate 125 mW/°C above 85°C)
10.5 W
8 °C/W
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-55 to +85 °C
Class 1A, Passed 250V
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
Die Packaging Information [1]
3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
6
Application Support: Phone: 1-800-ANALOG-D
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
RF signal input. This pin is AC coupled and matched to 50
Ohms over the operating frequency range.
1
RFIN
Gate control for amplifier. Vgg1 and Vgg2. External bypass
capacitors of 100pF, 0.01uF, and 4.7uF are required,
also required is an in line 20 Ohm resistor, see
Application Circuit.
2, 9
Vgg1, Vgg2
Drain bias voltage for the top half of the amplifier. External
bypass capacitors of 100pF required for each pin, followed
by common 0.01uF and 4.7uF Capacitors.
3, 4, 5, 7, 8
Vdd1-4
RF signal output. This pad is AC coupled and matched to 50
Ohms over the operating frequency range.
7
RFOUT
GND
Die Bottom
Die bottom must be connected to RF/DC ground.
Application Circuit
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
7
Application Support: Phone: 1-800-ANALOG-D
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Assembly Diagram
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
8
Application Support: Phone: 1-800-ANALOG-D
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD pro-
tective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against > 250V
ESD strikes.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255°C and a tool
temperature of 265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290°C. DO
NOT expose the chip to a temperature greater than 320°C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is rec-
ommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started
on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
9
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Notes:
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibilityisassumedby AnalogDevicesfor itsuse, norforanyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are thepropertyoftheir respectiveowners.
10
Application Support: Phone: 1-800-ANALOG-D
相关型号：
HMC744LC3
14 Gbps Fast Rise Time 1:2 Fanout Buffer with Programmable Output Voltage & Positive Supply
ADI
HMC744LC3C
13 Gbps, FAST RISE TIME 1:2 FANOUT BUFFER w/ PROGRAMMABLE OUTPUT VOLTAGE & POSITIVE SUPPLY
HITTITE
HMC744LC3C_10
13 Gbps, FAST RISE TIME 1:2 FANOUT BUFFER w/ PROGRAMMABLE OUTPUT VOLTAGE & POSITIVE SUPPLY
HITTITE
HMC744LC3TR
14 Gbps Fast Rise Time 1:2 Fanout Buffer with Programmable Output Voltage & Positive Supply
ADI
HMC745LC3
13 Gbps, FAST RISE TIME XOR / XNOR GATE w/ PROGRAMMABLE OUTPUT VOLTAGE & POSITIVE SUPPLY
HITTITE
HMC745LC3
13 Gbps, Fast Rise Time XOR/XNOR Gate with Programmable Output Voltage and Positive Supply
ADI
HMC745LC3C
13 Gbps, FAST RISE TIME XOR / XNOR GATE w/ PROGRAMMABLE OUTPUT VOLTAGE & POSITIVE SUPPLY
HITTITE
©2020 ICPDF网 联系我们和版权申明