AP640R1-00 [ALPHA]
18-40 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch; 18-40 GHz的砷化镓MMIC高隔离度单刀单掷反光PIN开关
| 型号： | AP640R1-00 |
| 厂家： | 
ALPHA INDUSTRIES |
| 描述： | 18-40 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
18–40 GHz GaAs MMIC
High Isolation SPST Reflective PIN Switch
AP640R1-00
Chip Outline
Features
I Broad Bandwidth
I Low Loss, < 1.3 dB
0.670
0.585
I High Isolation, > 37 dB
I Excellent Return Loss, < -13 dB
I Fast Switching Speed, 4 ns
0.313
0.000
I High Power Handling, 37 dBm Peak,
33 dBm CW
Description
Alpha’s high isolation, single pole, single throw PIN diode
switch is a robust, high performance switch. It is ideal for
low loss, high isolation applications, particularly where
broad bandwidths and high power handling is required.
The chip uses Alpha’s proven PIN diode technology, and
is based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. The GaAs MMIC employs
two shunt PIN diodes and an on-chip bias network. Chips
are measured on a 100% basis at 24, 28, 31 and 35 GHz
for insertion loss, isolation, input and output return losses,
and also at DC for diode breakdown voltage and turn on
voltage.
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature
Storage Temperature
DC Reverse Bias
Value
-55°C to +125°C
-65°C to +150°C
-70 V (-20 mA)
+1.3 V (100 mA)
10 W
DC Forward Bias
P
IN
Electrical Specifications at 25°C
2
Parameter
Symbol
Condition
Min.
Typ.
1.0
1.3
42
36
14
24
14
22
2
Max.
1.3
Unit
dB
dB
dB
dB
dB
dB
dB
dB
µA
ns
Insertion Loss
Isolation
IL
F = 18, 21, 24, 28, 31, 35 GHz
F = 38, 40 GHz
1.9
ISO
F = 18, 21, 24, 28, 31, 35 GHz
F = 38, 40 GHz
37
33
Input Return Loss (Insertion State)
Output Return Loss (Insertion State)
Leakage Current
RL
F = 18, 21 GHz
12
15
12
13
20
I
F = 24, 28, 31, 35, 38, 40 GHz
F = 18, 21 GHz
RL
I
O
F = 24, 28, 31, 35, 38, 40 GHz
V = -50 V
DD
1
Switching Speed
4
1
Output Power at 1 dB Compression
P
1 dB
F = 35 GHz
33
dBm
1. Not measured on a 100% basis.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 3/00A
18–40 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch
AP640R1-00
Typical Performance Data
0
-10
-20
-30
-40
-50
0
0
-10
-20
-30
0
Insertion Loss
Insertion Loss
-1
-2
-3
-4
-5
-1
-2
-3
-4
Output Return Loss
Input Return Loss
Isolation
Output Return Loss
Input Return Loss
15
20
25
30
35
40
-26.0
-5.0
-3.5
-1.0
0.0
Frequency (GHz)
Reverse Bias Voltage (V)
Performance vs. DC Bias
F = 28 GHz
Performance vs. Frequency
Bias Conditions: I = 20 mA, V = -3.5 V
F
R
0
-10
-20
-30
-40
-50
1.5
1.2
0.9
0.6
0.3
0.0
Truth Table
Input/Output Return Loss
Forward Voltage
B
J –J
1 2
1
+20 mA
-5 V
Isolation
Insertion Loss
Circuit Schematic
Isolation
B1
0
1
2
5
10
20
40
Forward Current (mA)
J3
J2
Performance vs. DC Bias
F = 28 GHz
Bias Arrangement
RESISTOR
B1
J2
J1
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 3/00A
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