BTT6200-1ENA
The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is especially designed to drive lamps up to 1 x R10W 24 V or 1 x R5W 12 V, as well as LEDs in the harsh automotive environment.
驱动 接口集成电路
INFINEON
PE3100G2DQIRL-QX4
Dual port Fiber 100 Gigabit Ethernet PCI Express Content Director Server Adapter
PC
SILICOM
