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IS25LP032A-QHLE
3V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
ISSI
EATON
WJF-A31-C/4
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
PANASONIC
MSYSTEM
MSYSTEM
SUNTSU
TPS62860
1.8-V to 5.5-V Input, 0.6-/1-A Synchronous Step-Down Converter with I2C/VSEL Interface
TI
CK-COMPONENTS
BSS84AKM
50 V, 230 mA P-channel Trench MOSFETProduction
NEXPERIA
WALSIN
WALSIN
STM32G031J8M6TR
Arm® Cortex®-M0 32-bit MCU, up to 64 KB Flash, 8 KB RAM, 2x USART, timers, ADC, comm. I/Fs, 1.7-3.6V
STMICROELECTR
WJF-AA2-D/4
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
LP8867-Q1
具有电力线 FET 保护的高集成度 4 通道 120mA 汽车类 LED 驱动器
TI
EATON
NUVOTON
WALSIN
WJF-ABC-S/5
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
LEIDITECH
FTS-6B-P
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
IPD42DP15LM
D²PAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持逻辑电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。
INFINEON
WJF-A21-B/4
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
WJF-A13-V
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
PANASONIC
PANASONIC
SUNTSU
WJF-AB2-D
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
2153261043
Mini-Fit Jr. Female-to-Pigtail Off-the-Shelf (OTS) Cable Assembly, Dual Row, 600.00mm Length, Tin (Sn) Plating, 4 Circuits, Black
MOLEX
HAMMOND
- 元器件品牌
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
