APM2054NVC-TUL [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM2054NVC-TUL |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM2054NV
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
20V/5A,
RDS(ON)= 35mW (typ.) @ VGS= 10V
RDS(ON)= 45mW (typ.) @ VGS= 4.5V
RDS(ON)= 110mW (typ.) @ VGS= 2.5V
Super High Dense Cell Design
Reliable and Rugged
·
·
·
Top View of SOT-223
(2)
D
Lead Free Available (RoHS Compliant)
Applications
(1)
G
·
Switching Regulators
Switching Converters
·
S
(3)
N-ChannelMOSFET
Ordering and Marking Information
Package Code
V : SOT-223
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TU : Tube
Lead Free Code
APM2054N
Lead Free Code
°
Handling Code
Temp. Range
Package Code
TR : Tape & Reel
L : Lead Free Device Blank : Original Device
APM2054N
XXXXX
APM2054N V :
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
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Rev. B.2 - Apr., 2005
APM2054NV
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
Parameter
Rating
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
±16
5
Continuous Drain Current
Pulsed Drain Current
A
A
VGS=10V
IDM
*
20
IS*
TJ
Diode Continuous Forward Current
3
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
1.47
TA=25°C
W
PD*
Power Dissipation for Single Operation
TA=100°C
0.58
Rq
*
Thermal Resistance-Junction to Ambient
°C/W
JA
85
Note:
2
£
*Surface Mounted on 1in pad area, t 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2054NV
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
20
V
VGS=0V, IDS=250mA
VDS=16V, VGS=0V
1
IDSS Zero Gate Voltage Drain Current
m
A
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
0.6
0.9
1.5
±100
40
V
VDS=VGS, IDS=250mA
VGS=±16V, VDS=0V
VGS=10V, IDS=5A
VGS=4.5V, IDS=3.5A
VGS=2.5V, IDS=2.5A
ISD=3A, VGS=0V
nA
35
45
a
RDS(ON) Drain-Source On-state Resistance
54
mW
110
0.85
130
1.3
a
VSD
Diode Forward Voltage
V
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
11
3.8
5.2
13
VDS=10V, VGS=4.5V,
IDS=6A
nC
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Rev. B.2 - Apr., 2005
APM2054NV
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM2054NV
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Dynamic Characteristics b
td(ON)
Tr
Turn-on Delay Time
Turn-on Rise Time
7
15
19
6
10
25
26
7
W
VDD=10V, RL=10 ,
IDS=1A, VGEN=4.5V,
ns
td(OFF) Turn-off Delay Time
W
RG=6
Tf
Turn-off Fall Time
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
2.5
450
100
60
W
Ciss
Coss
Crss
Input Capacitance
VGS=0V,
VDS=20V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Notes:
m
a : Pulse test ; pulse width£300 s, duty cycle£2%.
b : Guaranteed by design, not subject to production testing.
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Rev. B.2 - Apr., 2005
APM2054NV
Typical Characteristics
Drain Current
Power Dissipation
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
TA=25oC,VG=10V
TA=25oC
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - JunctionTemperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
0.2
300ms
0.1
0.1
0.01
1E-3
0.05
1ms
1
10ms
0.02
0.01
100ms
1s
0.1
DC
Single Pulse
Mounted on 1in2 pad
qJA :85 oC/W
TA=25oC
R
0.01
1E-4 1E-3 0.01 0.1
1
10
100
0.1
1
10
60
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
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Rev. B.2 - Apr., 2005
APM2054NV
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
20
160
140
120
100
80
VGS= 4, 5, 6, 7, 8, 9, 10V
18
VGS=2.5V
16
14
12
3V
10
8
6
4
60
VGS=4.5V
VGS=10V
40
20
2
2V
0
0
0
4
8
12
16
20
0
2
4
6
8
10
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
Transfer Characteristics
20
18
16
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS =250mA
Tj=125oC
6
Tj=-55oC
Tj=25oC
4
2
0
-50 -25
0
25 50 75 100 125 150
0
1
2
3
4
5
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
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Rev. B.2 - Apr., 2005
APM2054NV
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
20
10
VGS = 10V
2.2
IDS = 5A
2.0
Tj=150oC
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj=25oC
0.2
RON@Tj=25oC: 35mW
1
0.0
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
700
600
500
400
300
200
100
0
VDS=10V
ID = 5A
Frequency=1MHz
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
4
8
12
16
20
24
0
4
8
12
16
20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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Rev. B.2 - Apr., 2005
APM2054NV
Packaging Information
SOT-89 (Reference EIAJ ED-7500A Registration SC-62)
D
D1
a
E
H
1
2
3
L
C
B1
B
e
e1
A
a
Millimeters
Inches
Dim
Min.
Max.
Min.
0.055
0.016
0.014
0.014
0.173
0.053
Max.
0.063
0.022
0.019
0.017
0.181
0.072
A
B
1.40
0.40
0.35
0.35
4.40
1.35
1.60
0.56
0.48
0.44
4.60
1.83
B1
C
D
D1
e
1.50 BSC
3.00 BSC
0.059 BSC
0.118 BSC
e1
E
2.29
3.75
0.80
2.60
4.25
1.20
0.090
0.148
0.031
0.102
0.167
0.047
H
L
a
°
10
°
10
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Rev. B.2 - Apr., 2005
APM2054NV
Packaging Information
SOT-223 (Reference JEDEC Registration SOT-223)
3.3
[0.132]
D
A
a
B
1
1.5
[0.06]
c
6.3
[0.252]
H
E
L
1.5
TYP
[0.06]
K
A
1
e
e
1
2.3
[0.092]
1 TYP
[0.04]
LAND PATTERN
b
RECOMMENDATION
B
CONTROLLING DIMENSION
IS MILLIMETERS VALUES IN
[ ] ARE INCH
Millimeters
Inches
Dim
Min.
1.50
0.02
0.60
2.90
0.28
6.30
Max.
1.80
0.08
0.80
3.10
0.32
6.70
Min.
1.50
0.02
0.60
2.90
0.28
6.30
A
A1
B
A
A1
B
B1
c
B1
c
D
e
D
2.3 BSC
4.6 BSC
0.09 BSC
0.18 BSC
e1
H
L
6.70
0.91
1.50
7.30
1.10
2.00
H
L
K
a
6.70
0.91
1.50
K
a
°
°
°
0
0
10
b
°
°
13
13
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Rev. B.2 - Apr., 2005
APM2054NV
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
°
°
3 C/second max.
3 C/second max.
Preheat
°
°
150 C
100 C
-
-
-
Temperature Min (Tsmin)
Temperature Max (Tsmax)
Time (min to max) (ts)
°
°
150 C
200 C
60-120 seconds
60-180 seconds
Time maintained above:
°
°
183 C
217 C
-
Temperature (TL)
Time (tL)
60-150 seconds
60-150 seconds
-
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
°
Time within 5 C of actual
10-30 seconds
20-40 seconds
Peak Temperature (tp)
Ramp-down Rate
°
°
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
°
Time 25 C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Rev. B.2 - Apr., 2005
APM2054NV
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
°
°
225 +0/-5 C
240 +0/-5 C
³
°
°
2.5 mm
225 +0/-5 C
225 +0/-5 C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
°
°
°
260 +0 C*
260 +0 C*
260 +0 C*
1.6 mm – 2.5 mm
°
°
°
245 +0 C*
260 +0 C*
250 +0 C*
³
°
°
°
245 +0 C*
2.5 mm
*Tolerance: The device manufacturer/supplier
including the stated classification temperature (this means Peak reflow temperature +0 C.
250 +0 C*
245 +0 C*
shall
assure process compatibility up to and
°
°
°
For example 260 C+0 C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
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Rev. B.2 - Apr., 2005
APM2054NV
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
16.4 + 0.3
-0.2
T2
W
16+ 0.3
- 0.1
P
E
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
(mm)
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO- 252
16
13.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
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